Radio-frequency voltage detection

Patent metadata

Field	Value
Publication number	US-10345346-B2
Application number	US-201615207485-A
Country	US
Kind code	B2
Filing date	Jul 11, 2016
Priority date	Jul 12, 2015
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

Methods and apparatus are provided for detection of voltage levels of RF signals. A first voltage correction is provided based on a thermal voltage and a second voltage correction is provided based on a voltage difference between a detection transistor, used for the rectification of the RF signal, and a reference transistor, to which the RF signal is not supplied. Based on the first and second voltage corrections, a more accurate detector with greater linearity may be obtained. In an embodiment, the second voltage correction may be generated proportional to a hyperbolic tangent of the voltage difference between two transistors, obtained using an additional pair of transistors configured as a differential pair. Applications include the control of a power amplifier output in a wireless device.

First claim

What is claimed is:

1. A detector circuit for determining a peak voltage level of a radio-frequency signal comprising:
a detection transistor configured to receive the radio-frequency signal;
a reference transistor that is not configured to receive the radio-frequency signal; and
voltage correction circuitry configured to generate a first voltage correction based on a thermal voltage and a second voltage correction based on a voltage difference between a voltage of an emitter of the detection transistor and a voltage of an emitter of the reference transistor.

2. The detector circuit of claim 1 wherein the second voltage correction is based on a voltage difference that is obtained without taking into account the first voltage correction.

3. The detector of claim 1 wherein the second voltage correction increases with increasing voltage difference from zero up to a threshold and does not increase or increases at a lower rate with increasing voltage difference above the threshold.

4. The detector circuit of claim 1 wherein the second voltage correction is based on a sigmoid function of the voltage difference.

5. The detector circuit of claim 4 wherein the second voltage correction is based on a hyperbolic tangent of the voltage difference divided by twice the thermal voltage.

6. The detector circuit of claim 1 comprising first and second reference transistors that are not configured to receive the radio-frequency signal, the second voltage correction being based on a voltage difference between the voltage of the emitter of the detection transistor and a voltage of an emitter of the second reference transistor.

7. The detector circuit of claim 6 wherein the first voltage correction is V T ·In(2).

8. The detector circuit of claim 7 wherein the voltage correction circuitry includes a differential pair of transistors for generating the second voltage correction.

9. The detector circuit of claim 8 wherein the voltage correction circuitry includes at least one current mirror stage to mirror a difference in collector or drain currents of the differential pair to the first reference transistor for generation of the second voltage correction.

10. The detector circuit of claim 8 wherein voltage inputs of the differential pair of transistors are coupled to the emitters of the detection transistor and the second reference transistor.

11. The detector circuit of claim 10 wherein the voltage correction circuitry is configured to produce, using the differential pair of transistors, the second voltage correction based on a hyperbolic tangent of the voltage difference between the voltage of the emitter of the detection transistor and the voltage of the emitter of the second reference transistor.

12. The detector circuit of claim 8 wherein the differential pair of transistors includes two emitter-coupled bipolar transistors or two source-coupled field-effect transistors.

13. The detector circuit of claim 12 wherein the differential pair of transistors includes two emitter-coupled bipolar transistors.

14. The detector circuit of claim 13 comprising:
a low-pass RC filter located between the emitter of the detection transistor and a base of a first transistor of the differential pair; and
a matching resistor between the emitter of the second reference transistor and a base of a second transistor of the differential pair.

15. The detector circuit of claim 8 wherein the differential pair of transistors is connected to a proportional-to-absolute-temperature current source.

16. The detector circuit of claim 9 wherein the detection transistor and the first and second reference transistors are connected to proportional-to-absolute-temperature current sources.

17. The detector circuit of claim 9 wherein the detection transistor and the first and second reference transistors are NPN bipolar transistors, the radio-frequency input being provided to a base of the detection transistor.

18. A semiconductor die comprising at least one detector circuit for determining a peak voltage level of a radio-frequency signal comprising:
a detection transistor configured to receive the radio-frequency signal;
a reference transistor that is not configured to receive the radio-frequency signal; and
voltage correction circuitry configured to generate a first voltage correction based on a thermal voltage and a second voltage correction based on a voltage difference between a voltage of an emitter of the detection transistor and a voltage of an emitter of the reference transistor.

19. A wireless device comprising at least one radio-frequency module, the radio-frequency module comprising at least one semiconductor die, the semiconductor die comprising at least one detector circuit for determining a peak voltage level of a radio-frequency signal comprising:
a detection transistor configured to receive the radio-frequency signal;
a reference transistor that is not configured to receive the radio-frequency signal; and
voltage correction circuitry configured to generate a first voltage correction based on a thermal voltage and a second voltage correction based on a voltage difference between a voltage of an emitter of the detection transistor and a voltage of an emitter of the reference transistor.

Assignees

• Skyworks Solutions Inc

Inventors

• Whittaker Edward John Wemyss

Classifications

• H04B17/318

  Received signal strength · CPC title

• G01R21/14

  Compensating for temperature change · CPC title

• G01R19/04 Primary

  Measuring peak values {or amplitude or envelope} of AC or of pulses · CPC title

• G01R19/32

  Compensating for temperature change · CPC title