Process for the generation of thin inorganic films

Patent metadata

Field	Value
Publication number	US-10344381-B2
Application number	US-201515325840-A
Country	US
Kind code	B2
Filing date	Jul 22, 2015
Priority date	Jul 24, 2014
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R 1 and R 4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R 2 , R 3 , R 5 and R 6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.

First claim

The invention claimed is:

1. A process, comprising:
bringing a carbene compound of general formula (I) into a gaseous state or an aerosol state; and
depositing the carbene compound of the general formula (I) from the gaseous state or the aerosol state onto a solid substrate;
wherein:
the compound of the general formula (I) is:

R 1 and R 4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group;
R 2 , R 3 , R 5 and R 6 are independent of each other hydrogen, an alkyl group or a trialkylsilyl group;
n is an integer from 1 to 3;
M is Ni or Co;
X is independently a ligand which coordinates M; and
m is an integer from 0 to 4.

2. The process according to claim 1 , wherein the carbene compound of the general formula (I) is chemisorbed on a surface of the solid substrate.

3. The process according to claim 1 , further comprising:
decomposing the deposited carbene compound of the general formula (I) by removal of all ligands L and X.

4. The process according to claim 3 , wherein the deposited carbene compound of the general formula (I) is exposed to a reducing agent.

5. The process according to claim 3 , wherein a sequence of depositing the carbene compound of the general formula (I) onto the solid substrate and decomposing the deposited carbene compound of the general formula (I) is performed at least twice.

6. The process according to claim 1 , wherein R 2 , R 3 , R 5 and R 6 are hydrogen.

7. The process according to claim 1 , wherein R 2 and R 3 are methyl.

8. The process according to claim 1 , wherein n is 2.

9. The process according to claim 1 , wherein R 1 and or R 4 is methyl or ten-butyl.

10. The process according to claim 1 , wherein m is an integer from 2 to 4, such that one X is NO and other X are CO.

11. A method for forming a film on a solid substrate, the method comprising depositing on a carbene compound of general formula (I) on the solid substrate:

Wherein:
R 1 and R 4 are independent of each other an alkyl group, an aryl group or a triaikylsilyl group;
R 2 , R 3 , R 5 and R 6 are independent of each other hydrogen, an alkyl group, an aryl group or a triaikylsilyl group;
n is an integer from 1 to 3;
M is Ni or Co;
X is independently a ligand which coordinates M; and m is an integer from 0 to 4.

Assignees

• Basf Se

Inventors

• Strautmann Julia
• Paciello Rocco
• Schaub Thomas
• Eickemeyer Felix
• Loeffler Daniel
• Wilmer Hagen
• Radius Udo
• Berthel Johannes
• Hering Florian

Classifications

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C30B25/10

  Heating of the reaction chamber or the substrate · CPC title

• C30B25/08

  Reaction chambers; Selection of materials therefor · CPC title

• C07F15/06

  Cobalt compounds · CPC title

• C07F15/04

  Nickel compounds · CPC title