Power amplification module, front-end circuit, and communication device

Patent metadata

Field	Value
Publication number	US-10340971-B2
Application number	US-201815941078-A
Country	US
Kind code	B2
Filing date	Mar 30, 2018
Priority date	Oct 2, 2015
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

A PA module ( 10 A) includes a previous stage amplification element ( 12 ) to amplify a high-frequency signal, a posterior stage amplification element ( 13 ) to amplify the high-frequency signal amplified by the previous stage amplification element ( 12 ), and a variable filter circuit arranged between the previous stage amplification element ( 12 ) and the posterior stage amplification element ( 13 ) to vary a pass band and an attenuation band in accordance with a frequency band of the high-frequency signal, in which the variable filter circuit includes a filter portion ( 16 ) and switches ( 14 and 15 ) to vary the pass band and the attenuation band of the variable filter circuit, and the previous stage amplification element ( 12 ) and at least a part of the switches ( 14 and 15 ) are formed in one chip using a chip A, the posterior stage amplification element ( 13 ) are included in a second chip which is different from the chip A.

First claim

The invention claimed is:

1. A power amplification module comprising:
a previous stage amplification element to amplify a high-frequency signal;
a posterior stage amplification element to amplify the high-frequency signal amplified by the previous stage amplification element;
a variable filter circuit arranged between the previous stage amplification element and the posterior stage amplification element to vary a pass band or an attenuation band in accordance with a frequency band of the high-frequency signal; and
an amplification control portion to control amplification characteristics of the previous stage amplification element and the posterior stage amplification element in accordance with a frequency band of the high-frequency signal,
wherein the variable filter circuit includes
one or more filter elements, and
a filter band selection portion to vary the pass band or the attenuation band of the variable filter circuit by being switched in accordance with the frequency band of the high-frequency signal,

the previous stage amplification element and at least a part of the filter band selection portion are provided in one chip using a first chip,
the posterior stage amplification element is included in a second chip different from the first chip, and
the amplification control portion is included in the first chip.

2. The power amplification module according to claim 1 ,
wherein the one or more filter elements are configured of a plurality of filter elements with the pass bands or the attenuation bands different from one another,
the filter band selection portion includes
a first switch element arranged between the previous stage amplification element and the plurality of filter elements to switch a connection between an output terminal of the previous stage amplification element and each of the plurality of filter elements, and
a second switch element arranged between the posterior stage amplification element and the plurality of filter elements to switch a connection between an input terminal of the posterior stage amplification element and each of the plurality of filter elements, and

the previous stage amplification element and at least one of the first switch element and the second switch element are provided in one chip using the first chip.

3. The power amplification module according to claim 1 ,
wherein the one or more filter elements are a resonator,
the filter band selection portion includes
a plurality of capacitive elements connected to the resonator, and
a plurality of switch elements respectively connected to the plurality of corresponding capacitive elements to switch a connection between at least one of the plurality of capacitive elements and the resonator, the previous stage amplification element, and the posterior stage amplification element, and
the previous stage amplification element and at least one group of the plurality of capacitive elements and the plurality of switch elements are provided in one chip using the first chip.

4. The power amplification module according to claim 1 ,
wherein a first wiring connecting the amplification control portion to the previous stage amplification element and a second wiring connecting the previous stage amplification element to the filter band selection portion are provided in the first chip.

5. The power amplification module according to claim 1 ,
wherein the previous stage amplification element, the filter band selection portion, and the posterior stage amplification element are arranged on a mounting surface of a substrate,
the one or more filter elements are stacked and arranged so as to overlap with at least one of the previous stage amplification element, the filter band selection portion, and the posterior stage amplification element when the substrate is viewed in a plan view.

6. The power amplification module according to claim 5 ,
wherein the one or more filter elements are stacked and arranged so as to overlap with only at least one of the previous stage amplification element and the filter band selection portion among the previous stage amplification element, the filter band selection portion, and the posterior stage amplification element in the plan view.

7. The power amplification module according to claim 5 ,
wherein the one or more filter elements are stacked and arranged so as to overlap with only the filter band selection portion among the previous stage amplification element, the filter band selection portion, and the posterior stage amplification element in the plan view.

8. The power amplification module according to claim 1 ,
wherein the previous stage amplification element amplifies a high-frequency signal in a frequency range including a plurality of communication bands,
the posterior stage amplification element is configured of a plurality of amplification elements respectively corresponding to the plurality of communication bands, and
in the posterior stage amplification element, a selected amplification element, among the plurality of amplification elements, corresponding to a communication band to be used among the plurality of communication bands amplifies the high-frequency signal amplified by the previous stage amplification element.

9. The power amplification module according to claim 1 ,
wherein the first chip is configured of a complementary metal oxide semiconductor, and
the second chip is configured of GaAs.

10. A front-end circuit comprising:
the power amplification module according to claim 1 ;
a reception amplification circuit; and
a wave separator to output a reception signal from an antenna element to the reception amplification circuit and to output the high-frequency signal amplified by the power amplification module to the antenna element as a transmission signal.

11. The front-end circuit according to claim 10 ,
wherein in the variable filter circuit, the pass band is a transmission band corresponding to a use communication band selected from a plurality of communication bands, the attenuation band is a reception band corresponding to the use communication band.

12. A communication device comprising:
the front-end circuit according to claim 10 ;
a radio frequency signal processing circuit to output a high-frequency transmission signal to the front-end circuit and to which a high-frequency reception signal is inputted from the front-end circuit; and
a baseband signal processing circuit to perform signal processing by converting the high-frequency reception signal received from the radio frequency signal processing circuit to an intermediate frequency signal and to convert an intermediate frequency signal to a high-frequency signal and output the converted high-frequency reception signal to the radio frequency signal processing circuit.

13. The power amplification module according to claim 2 ,
wherein the previous stage amplification element, the filter band selection portion, and the posterior stage amplification element are arranged on a mounting surface of a substrate,
the one or more filter elements are stacked and arranged so as to overlap with at least one of the previous stage amplification element, the filter band selection portion, and the posterior stage amplification element when the substrate is viewed in a plan view.

14. The power amplification module according to claim 3 ,
wherein the previous stage amplification element, the filter band selection portion, and the posterior stage amplification element are arranged on a mounting surface of a substrate,
the one or more filter elements are stacked and arranged so as to overlap with at least one of the previou

Assignees

• Murata Manufacturing Co

Inventors

• OBIYA Hidenori
• Nakajima Reiji
• HITOMI Shinya

Classifications

• H03F1/56 Primary

  Modifications of input or output impedances, not otherwise provided for · CPC title

• H03F2200/387

  A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier · CPC title

• H04B1/40 Primary

  Circuits · CPC title

• H03F2200/168

  Two amplifying stages are coupled by means of a filter circuit · CPC title

• H03F2200/111

  the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not · CPC title