Quantum cascade laser

Patent metadata

Field	Value
Publication number	US-10340662-B2
Application number	US-201515314630-A
Country	US
Kind code	B2
Filing date	May 7, 2015
Priority date	Jun 4, 2014
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

A QCL (10) includes a first electrode (15), a first contact layer (11) that is in contact with the first electrode (15) and is made of a first compound semiconductor, a second electrode (14) having a polarity opposite to that of the first electrode (15), a second contact layer (13) that is in contact with the second electrode (14) and is made of a second compound semiconductor, and an active layer (12) disposed between the first contact layer (11) and the second contact layer (13) and including two or more active layer units. Each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked. The vibrational energies of longitudinal optical phonons of the third compound semiconductor and the fourth compound semiconductor are higher than the vibrational energy of a longitudinal optical phonon of GaAs and lower than or equal to the vibrational energy of a longitudinal optical phonon of AlN.

First claim

The invention claimed is:

1. A quantum cascade laser comprising:
a first electrode;
a first contact layer that is in contact with the first electrode and is made of a first compound semiconductor;
a second electrode having a polarity opposite to that of the first electrode;
a second contact layer that is in contact with the second electrode and is made of a second compound semiconductor; and
an active layer disposed between the first contact layer and the second contact layer and including two or more active layer units, wherein
each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked,
the third compound semiconductor is Al x3 In y3 Ga (1-x3-y3) N (0≤x3≤1, 0≤y3≤1),
the fourth compound semiconductor is Al x4 In y4 Ga (1-x4-y4) N (0≤x4≤1, 0≤y4≤1),
the fourth compound semiconductor has a band gap energy higher than that of the third compound semiconductor,
at least one of the barrier layers has a thickness of 1.8 nm or more, and
a main surface of each of the quantum well layers and a main surface of each of the barrier layers have an off-angle of ±1° with respect to a (1−100) orientation.

2. The quantum cascade laser according to claim 1 , wherein the barrier layer having a thickness of 1.8 nm or more is disposed between a quantum well layer constituting an upper lasing level and a quantum well layer constituting a lower lasing level.

3. The quantum cascade laser according to claim 1 , wherein each of the active layer units includes three or more of the quantum well layers and three or more of the barrier layers.

4. The quantum cascade laser according to claim 1 , further comprising a supporting substrate bonded to the first electrode or the second electrode or a supporting substrate electrically connected to the first electrode or the second electrode.

5. The quantum cascade laser according to claim 1 , wherein a metal layer is disposed between the first electrode and the second electrode.

6. The quantum cascade laser according to claim 5 , wherein the metal layer is disposed in at least one of the first contact layer and the second contact layer.

7. The quantum cascade laser according to claim 6 , wherein the at least one of the first contact layer and the second contact layer is formed by selective growth using the metal layer as a mask.

8. A quantum cascade laser comprising:
a first electrode;
a first contact layer that is in contact with the first electrode and is made of a first compound semiconductor;
a second electrode having a polarity opposite to that of the first electrode;
a second contact layer that is in contact with the second electrode and is made of a second compound semiconductor; and
an active layer disposed between the first contact layer and the second contact layer and including two or more active layer units, wherein
each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked,
the third compound semiconductor is Al x3 In 3 Ga (1-x3-y3) N (0≤x3≤1, 0<y3≤1),
the fourth compound semiconductor is Al x4 In y4 Ga (1-x4-y4) N (0≤x4≤1, 0<y4≤1),
the fourth compound semiconductor has a band gap energy higher than that of the third compound semiconductor,
at least one of the barrier layers has a thickness of 1.8 nm or more,
a main surface of each of the quantum well layers and a main surface of each of the barrier layers have an orientation different from a (0001) orientation and have an off-angle of ±1° with respect to a (1−100) orientation.

Assignees

• Sharp Kk
• Univ Tokyo

Inventors

• Kotani Teruhisa
• Arakawa Yasuhiko

Classifications

• H01S5/32025

  non-polar orientation · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S5/3402 Primary

  intersubband lasers, e.g. transitions within the conduction or valence bands · CPC title

• H01S5/0421

  characterised by the semiconducting contacting layers (electrodes H01S5/0425) · CPC title

• H01S5/2077

  using lateral bandgap control during growth, e.g. selective growth, mask induced · CPC title