Multi-gate thin film transistors, manufacturing methods thereof, array substrates, and display devices

Patent metadata

Field	Value
Publication number	US-10340389-B2
Application number	US-201515329180-A
Country	US
Kind code	B2
Filing date	Nov 12, 2015
Priority date	May 28, 2015
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

The present disclosure discloses in embodiments a thin film transistor and a manufacturing method thereof, an array substrate. The thin film transistor comprises: a base substrate, an active layer, a source, a gate, and a drain. Two ends of the active layer are connected to the source and the drain, respectively. The gate comprises a top gate and a bottom gate arranged opposite to each other in a direction perpendicular to the base substrate, the top gate comprising a top gate top portion and a top gate side portion connected to the top gate top portion, the top gate side portion extending from the top gate top portion towards the base substrate. The active layer is sandwiched between the top gate top portion and the bottom gate. A sidewall of the active layer is at least partially surrounded by the top gate side portion.

First claim

What is claimed is:

1. A thin film transistor comprising a base substrate, an active layer, a source, a gate, and a drain, the active layer, the source, the gate, and the drain disposed on the base substrate, the active layer including an end connected to the source and another end connected to the drain,
the gate including a top gate and a bottom gate, the top gate including a top gate top portion and a top gate side portion connected to the top gate top portion, the top gate top portion and the bottom gate arranged opposite to each other in a direction perpendicular to the base substrate, the top gate side portion extending from the top gate top portion towards the base substrate and not physically contacting the bottom gate,
the active layer sandwiched between the top gate top portion and the bottom gate, and the active layer including a sidewall at least partially surrounded by the top gate side portion.

2. The thin film transistor according to claim 1 , wherein the gate, the source and the drain are made of a non-transparent conductive material.

3. The thin film transistor according to claim 2 , wherein the drain comprises a drain bottom layer, and wherein the drain bottom layer, the bottom gate and the source are disposed in a same layer on the base substrate and spaced apart from one another, and the bottom gate is located between the source and the drain bottom layer.

4. The thin film transistor according to claim 3 , further comprising a gate insulating layer disposed on the base substrate and covering the drain bottom layer, the bottom gate and the source, the gate insulating layer defining first via holes corresponding to the drain bottom layer and the source, the active layer disposed on the gate insulating layer, and the active layer connected to the drain bottom layer and the source through the first via holes.

5. The thin film transistor according to claim 4 , further comprising a passivation layer disposed on the gate insulating layer and covering the active layer, the passivation layer and the gate insulating layer defining a second via hole and a third via hole, the second via hole corresponding to the base substrate, the third via hole corresponding to the drain bottom layer, the drain further including a drain top layer connected to the drain bottom layer through the third via hole, the top gate side portion at least extending from the passivation layer through the second via hole to the gate insulating layer, the third via hole and the second via hole spaced apart, and the third via hole and the second via hole together surrounding the sidewall of the active layer.

6. The thin film transistor according to claim 5 , wherein a cross-section of the third via hole and a cross-section of the second via hole together form a rectangular frame-like structure.

7. The thin film transistor according to claim 6 , wherein the passivation layer and the gate insulating layer define a fourth via hole, and wherein the top gate and the bottom gate are connected through the fourth via hole.

8. The thin film transistor according to claim 1 , wherein the active layer has a rectangular structure.

9. The thin film transistor according to claim 8 , wherein the top gate side portion surrounds three sides of the rectangular structure.

10. The thin film transistor according to claim 8 , wherein the top gate side portion surrounds two sides of the rectangular structure.

11. The thin film transistor according to claim 10 , further comprising a gate insulating layer covering the gate and a passivation layer disposed on the gate insulating layer, and wherein the drain comprises a drain bottom layer disposed on the gate insulating layer and a drain top layer disposed on the passivation layer.

12. The thin film transistor according to 1 , wherein the active layer includes an oxide semiconductor layer.

13. The thin film transistor according to claim 12 , wherein a material of the oxide semiconductor layer comprises IGZO, ITZO or ZnON.

14. The thin film transistor according to claim 12 , wherein the oxide semiconductor layer has a thickness of about 10-150 nm.

15. The thin film transistor according to 1 , wherein the gate, the source, and the drain include an opaque metal.

16. An array substrate comprising the thin film transistor according to claim 1 .

17. The array substrate according to claim 16 , wherein said thin film transistor is a first thin film transistor, wherein the array substrate further comprises gate lines, data lines, a pixel electrode layer and one or more additional thin film transistors disposed on the base substrate, and wherein the drain of the first thin film transistor is connected to the pixel electrode layer, the gate of the first thin film transistor is connected to one of the gate lines, and the source of the first thin film transistor is connected to one of the data lines.

18. A manufacturing method of a thin film transistor, the method comprising:
providing a base substrate; and
forming an active layer, a source, a gate and a drain on the base substrate, the active layer including an end connected to the source and another end connected to the drain,
the gate including a top gate and a bottom gate, the top gate including a top gate top portion and a top gate side portion connected to the top gate top portion, the top gate top portion and the bottom gate arranged opposite to each other in a direction perpendicular to the base substrate, the top gate side portion extending from the top gate top portion toward the base substrate and not physically contacting the bottom gate,
the active layer sandwiched between the top gate top portion and the bottom gate, and the active layer including a sidewall at least partially surrounded by the top gate side portion.

19. The manufacturing method according to claim 18 , wherein forming the gate, the source and the drain includes forming the gate, the source and the drain of a non-transparent conductive material.

20. The manufacturing method according to claim 19 , wherein forming the active layer, the source, the gate and the drain on the base substrate comprises:
forming the bottom gate, the source and a drain bottom layer in a same layer on the base substrate and spaced apart from one another, and the bottom gate located between the source and the drain bottom layer;
forming a gate insulating layer on the base substrate to cover the bottom gate, the source, and the drain bottom layer, and forming first via holes corresponding to the source and the drain bottom layer respectively in the gate insulating layer;
forming the active layer on the gate insulating layer;
forming a passivation layer on the gate insulating layer to cover the active layer, and forming a second via hole corresponding to the base substrate in the passivation layer and the gate insulating layer and forming a third via hole corresponding to the drain bottom layer; and
forming the top gate and a drain top layer on the passivation layer, the drain top layer connected to the drain bottom layer through the third via hole, and the top gate side portion at least extending from the passivation layer to the gate insulating layer through the second via hole.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Kong Xiangyong
• Zhu Xiaming
• Liu Xiaodi

Classifications

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H01L29/41733

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H01L29/66969

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic