Conductive structure body precursor, conductive structure body and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10338706-B2
Application number	US-201414765737-A
Country	US
Kind code	B2
Filing date	Nov 27, 2014
Priority date	Nov 27, 2013
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

The present application provides a conductive structure body precursor, a conductive structure body and a method for manufacturing the same.

First claim

The invention claimed is:

1. A method for manufacturing a conductive structure body comprising:
preparing a conductive structure body precursor including a substrate, an amorphous transparent conductive layer provided on the substrate, and a metal layer provided on the amorphous transparent conductive layer;
heat treating the conductive structure body precursor to crystallize the amorphous transparent conductive layer; and
forming a metal oxide layer, a metal nitride layer or a metal oxy-nitride layer on the metal layer prior to the step of heat treating the conductive structure body precursor,
wherein the metal oxide layer, the metal nitride layer or the metal oxy-nitride layer is formed using a sputtering method, and
wherein the step of heat treating the conductive structure body precursor is irradiating infrared light on the metal oxide layer, the metal nitride layer or the metal oxy-nitride layer,
wherein the metal oxide layer, the metal nitride layer or the metal oxy-nitride layer includes an oxide, a nitride or an oxy-nitride of a metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), neodymium (Nd), molybdenum (Mo), nickel (Ni), and an alloy thereof, and
wherein a thickness of the metal oxide layer, the metal nitride layer or the metal oxy-nitride layer is greater than or equal to 40 nm and less than or equal to 60 nm.

2. The method for manufacturing a conductive structure body of claim 1 , wherein the metal layer, and the metal oxide layer, the metal nitride layer or the metal oxy-nitride layer include the same metal.

3. The method for manufacturing a conductive structure body of claim 1 , wherein the step of heat treating the conductive structure body precursor uses an infrared (IR) lamp.

4. The method for manufacturing a conductive structure body of claim 1 , wherein the step of heat treating the conductive structure body precursor is carried out at a temperature of greater than or equal to 100° C. and less than or equal to 180° C.

5. The method for manufacturing a conductive structure body of claim 1 , further comprising patterning the metal layer after the step of heat treating the conductive structure body precursor.

6. The method for manufacturing a conductive structure body of claim 1 , further comprising patterning the metal layer, and the metal oxide layer, the metal nitride layer or the metal oxy-nitride layer after the step of heat treatment.

Assignees

• Lg Chemical Ltd

Inventors

• Lim Jin Hyong
• Kim Yong Chan
• Yoon Junghwan
• Yoon Jung Il
• Kim Ki-Hwan
• Lee Ilha

Classifications

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• H01L31/022475

  Electricity · mapped topic

• H05K2201/0108

  Transparent · CPC title

• H05K3/0017

  Etching of the substrate by chemical or physical means · CPC title

• H01L31/022483

  Electricity · mapped topic