Carbon dot light emitting diodes

US10334685B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10334685-B2
Application numberUS-201514940336-A
CountryUS
Kind codeB2
Filing dateNov 13, 2015
Priority dateNov 14, 2014
Publication dateJun 25, 2019
Grant dateJun 25, 2019

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

An electroluminescent LED device comprising a hole transport layer, an electron transport layer, an active emissive layer between the hole transport layer and the electron transport layer, and carbon dots forming the active emissive layer.

First claim

Opening claim text (preview).

Wherefore we claim: 1. A light emitting diode (LED) device comprising: a hole transport layer; an electron transport layer, an active emissive layer between the hole transport layer and the electron transport layer; and carbon dots forming the active emissive layer; wherein the light emitting diode device is an electroluminescent light emitting diode device, and the carbon dots are substantially spherical in shape. 2. The LED device of claim 1 wherein the carbon dots are formed of an organic carbon-containing materials. 3. The LED device of claim 1 wherein the carbon dots are between 0.5 and 20 nm in size. 4. The LED device of claim 1 further comprising a transparent conducting film anode, the transparent conducting film including one of indium fin oxide (ITO), fluorine doped tin oxide (FTO), carbon nanotube networks, and graphene. 5. The LED device of claim 1 further comprising a hole injection layer (HIL) including one of poly(ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS), the hole injection layer having a thickness of between 10 and 100 nm. 6. The LED device of claim 1 wherein the hole transport layer (HTL) includes one of poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine) (poly-TPD) and poly(N-vinylcarbazole) (PVK), the hole transport layer having a thickness of between 10 and 100 nm. 7. The LED device of claim 1 wherein the carbon-dot active emissive layer has a thickness of between 10 and 100 nm. 8. The LED device of claim 1 wherein the electron transport layer includes 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) at a thickness of between 2 to 50 nm thick. 9. The LED device of claim 8 further comprising followed by a LiF/Al bilayer cathode, where the LiF layer has a thickness of between 1 and 20 nm and the Al layer has a thickness of between 10 and 300 nm. 10. The LED device of claim 1 wherein the electron transport layer includes ZnO nanoparticle, where the electron transport layer has a thickness of between 5 and 100 nm thick. 11. The LED device of claim 10 , further comprising an Al cathode having a thickness of 10 between 300 nm. 12. The LED device of claim 1 further comprising a hole injection layer sandwiched between a transparent conducting film anode and the hole transport layer, and a the electron transport layer sandwiched between the carbon dot active emissive layer and a cathode. 13. The LED device of claim 1 further comprising a transparent conducting film anode, the transparent conducting film including one of indium tin oxide (ITO), fluorine doped tin oxide (FTO), carbon nanotube networks, and graphene; a hole injection layer (HIL) including one of poly(ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS), the hole injection layer having a thickness of between 10 and 100 nm; the hole transport layer (HTL) includes one of poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine) (poly-TPD) and poly(N-vinylcarbazole (PVK), the hole transport layer having a thickness of between 10 and 100 nm; and a LiF/Al bilayer cathode, where the LiF layer has a thickness of between 1 and 20 nm and the Al layer has a thickness of between 10 and 300 nm; wherein the carbon dots are between 0.5 and 20 nm in size; the carbon-dot active emissive layer has a thickness of between 10 and 100 nm; the electron transport layer includes 1,3,5-(N-phenylbenzimidazol-2-yl)benzene (TPBI) at a thickness of between 2 to 50 nm thick; and the electron transport layer includes ZnO nanoparticle, where the electron transport layer has a thickness of between 5 and 100 nm thick. 14. The LED device of claim 1 wherein the carbon dots are formed of an inorganic carbon-containing material.

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10334685B2 cover?
An electroluminescent LED device comprising a hole transport layer, an electron transport layer, an active emissive layer between the hole transport layer and the electron transport layer, and carbon dots forming the active emissive layer.
Who is the assignee on this patent?
Yu Weiyong, Zhang Yu, Univ Louisiana State
What technology area does this patent fall under?
Primary CPC classification H05B45/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 25 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).