Thin film semiconductor comprising a small-molecular semiconducting compound and a non-conductive polymer

Patent metadata

Field	Value
Publication number	US-10333072-B2
Application number	US-201515506802-A
Country	US
Kind code	B2
Filing date	Aug 20, 2015
Priority date	Aug 28, 2014
Publication date	Jun 25, 2019
Grant date	Jun 25, 2019

Abstract

A thin film semiconductor comprising a compound of formula I or II wherein: R 1 and R 2 , at each occurrence, independently are selected from a C 1-30 alkyl group, a C 2-30 alkenyl group, a C 2-30 alkynyl group and a C 1-30 haloalkyl group, R 3 , R 4 , R 5 , and R 6 independently are H or an electron-withdrawing group, wherein at least one of R 3 , R 4 , R 5 , and R 6 is an electron-withdrawing group; and a non-conductive polymer.

First claim

The invention claimed is:

1. A thin film semiconductor comprising a compound of the following formula I or II:

wherein:
R 1 and R 2 , at each occurrence, independently are selected from the group consisting of a C 1-30 alkyl group, a C 2-30 alkenyl group, a C 2-30 alkynyl group, and a C 1-30 haloalkyl group,
R 3 , R 4 , R 5 , and R 6 independently are H or an electron-withdrawing group, wherein at least one of R 3 , R 4 , R 5 , and R 6 is an electron-withdrawing group; and
a non-conductive polymer,
wherein the non-conductive polymer is poly(methylmethacrylate), and
wherein a weight ratio of the compound of the formula I or II to the non-conductive polymer in the thin film semiconductor is from 5:1 to 1:5.

2. The thin film semiconductor of claim 1 , wherein R 1 and R 2 , at each occurrence, are selected from the group consisting of a C 1-12 alkyl group and a C 1-12 haloalkyl group.

3. The thin film semiconductor of claim 1 , wherein each of R 3 , R 4 , R 5 , and R 6 is selected from the group consisting of H, F, Cl, Br, I, and —CN.

4. The thin film semiconductor of claim 1 , wherein each of R 3 and R 4 is Br or CN and R 5 and R 6 are H.

5. The thin film semiconductor of claim 1 , wherein each of R 3 and R 6 is Br or —CN and R 4 and R 5 are H.

6. The thin film semiconductor of claim 1 , wherein the compound has the following formula Ia or formula Ib:

wherein R′, R″ are, at each occurrence, selected from the group consisting of a C 1-12 alkyl group and a C 1-12 haloalkyl group, and
R 3 , R 4 , and R 6 are as defined in claim 1 .

7. The thin film semiconductor of claim 1 , wherein the compound of the formula I is

8. The thin film semiconductor of claim 1 , wherein the compound of formula II is

9. A solution comprising at least one compound of the following formula I or II:

wherein:
R 1 and R 2 each independently, are selected from the group consisting of a C 1-30 alkyl group, a C 2-30 alkenyl group, a C 2-30 alkynyl group, and a C 1-30 haloalkyl group,
R 3 , R 4 , R 5 , and R 6 each independently, are H or an electron-withdrawing group, wherein at least one of R 3 , R 4 , R 5 , and R 6 is an electron-withdrawing group,
a non-conductive organic polymer, and
a solvent,
wherein the non-conductive organic polymer is poly(methylmethacrylate), and
wherein a weight ratio of the compound of the formula I or II to the non-conductive organic polymer in the solution is from 5:1 to 1:5.

Assignees

• Basf Se

Inventors

• Weitz Thomas
• Gessner Thomas
• Takeya Junichi
• Kishi Masayuki

Classifications

• C07D471/06 Primary

  Peri-condensed systems · CPC title

• H01L51/0566

  Electricity · mapped topic

• H01L51/004

  Electricity · mapped topic

• H01L51/0053 Primary

  Electricity · mapped topic

• H10K85/621 Primary

  Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide · CPC title