Single poly electrical erasable programmable read only memory (EEPROM)

Patent metadata

Field	Value
Publication number	US-10332964-B2
Application number	US-201615352587-A
Country	US
Kind code	B2
Filing date	Nov 16, 2016
Priority date	Oct 21, 2016
Publication date	Jun 25, 2019
Grant date	Jun 25, 2019

Abstract

A single poly electrical erasable programmable read only memory (EEPROM) includes a source, a drain, a dielectric layer and an electrode layer. The source and the drain are located in a substrate, wherein the source and the drain have a first conductive type. The dielectric layer is disposed on the substrate and between the source and the drain, wherein the dielectric layer includes a first dielectric layer having two tunnel dielectric parts separating from each other, and thicknesses of the two tunnel dielectric parts are thinner than thicknesses of the other parts of the first dielectric layer. The electrode layer is disposed on the dielectric layer, wherein the electrode layer includes a first electrode disposed on the first dielectric layer, thereby the first electrode being a floating gate.

First claim

What is claimed is:

1. A single poly electrical erasable programmable read only memory (EEPROM), comprising:
a source and a drain located in a substrate, wherein the source and the drain have a first conductive type, and the substrate comprises a first active area and a second active area, and the first active area is isolated from the second active area by an isolation structure;
a dielectric layer disposed on the substrate and between the source and the drain, wherein the dielectric layer comprises a first dielectric layer only partially overlapping the second active area, the first dielectric layer has two separated tunnel dielectric parts in the first active area, and thicknesses of the two tunnel dielectric parts are thinner than a thickness of a memory channel of the first dielectric layer;
an electrode layer disposed on the dielectric layer, wherein the electrode layer comprises a first electrode disposed on the first dielectric layer, thereby the first electrode being a floating gate; and
two doped regions respectively disposed right below the two tunnel dielectric parts without contacting the source, wherein there is no selective gate between the two doped regions and the source.

2. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 1 , wherein the dielectric layer comprises a second dielectric layer.

3. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 2 , wherein a thickness of the second dielectric layer is larger than the thicknesses of the two tunnel dielectric parts.

4. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 3 , wherein the thickness of the second dielectric layer equals to the thickness of the memory channel of the first dielectric layer.

5. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 2 , wherein the electrode layer comprises a second electrode, and the second electrode is disposed on the second dielectric layer, thereby the second electrode being a selective gate.

6. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 1 , wherein the two doped regions have a first conductive type.

7. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 6 , wherein the two doped regions vertically surround the two tunnel dielectric parts respectively.

8. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 6 , further comprising:
a well located in the substrate, and the source and the drain located in the well, wherein the well has a second conductive type.

9. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 8 , wherein the first conductive type is N-type while the second conductive type is P-type.

10. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 1 , further comprising:
a contact dot disposed beside the floating gate.

11. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 10 , wherein a memory coupling capacitor of the first dielectric layer and the contact dot are in the second active area.

12. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 1 , wherein the source, the drain, the two tunnel dielectric parts and the memory channel of the first dielectric layer right below the floating gate are in the first active area.

13. The single poly electrical erasable programmable read only memory (EEPROM) according to claim 12 , wherein the dielectric layer comprises a second dielectric layer, and a thickness of the second dielectric layer equals to the thickness of the memory channel of the first dielectric layer in the first active area.

Assignees

• United Microelectronics Corp

Inventors

• Lee Chih-Haw
• Chen Tzu-Ping

Classifications

• H01L29/7883

  Electricity · mapped topic

• H01L27/11558

  Electricity · mapped topic

• H01L29/4238

  Electricity · mapped topic

• H01L29/66825

  Electricity · mapped topic

• H01L29/42368

  Electricity · mapped topic