BAW sensor device with peel-resistant wall structure

US10330642B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10330642-B2
Application numberUS-201615377378-A
CountryUS
Kind codeB2
Filing dateDec 13, 2016
Priority dateDec 14, 2015
Publication dateJun 25, 2019
Grant dateJun 25, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Lateral boundaries of a fluidic passage of a fluidic device incorporating at least one BAW resonator structure are fabricated with photosensitive materials (e.g., photo definable epoxy, solder mask resist, or other photoresist), allowing for high aspect ratio, precisely dimensioned walls. Resistance to delamination and peeling between a wall structure and a base structure is enhanced by providing a wall structure that includes a thin footer portion having a width that exceeds a width of an upper wall portion extending upward from the footer portion, and/or by providing a wall structure arranged over at least one anchoring region of a base structure. Anchoring features may include recesses and/or protrusions.

First claim

Opening claim text (preview).

What is claimed is: 1. A fluidic device comprising: a base structure comprising: (i) a substrate; and (ii) at least one bulk acoustic wave resonator structure supported by the substrate, the at least one bulk acoustic wave resonator structure including a piezoelectric material, a top side electrode arranged over a portion of the piezoelectric material, and a bottom side electrode arranged below at least a portion of the piezoelectric material, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region; and a wall structure arranged over at least a portion of the base structure and defining lateral boundaries of a fluidic passage arranged to receive a fluid and containing the active region; wherein: the wall structure comprises a footer portion and an upper wall portion that protrudes upward from the footer portion; the footer portion is arranged between the upper wall portion and the base structure; and the footer portion comprises a width that exceeds a width of the upper wall portion, wherein the wall structure comprises at least one of a photosensitive material, photoresist, or epoxy. 2. The fluidic device of claim 1 , further comprising a cover structure arranged over the wall structure and defining an upper boundary of the fluidic passage. 3. The fluidic device of claim 2 , wherein the wall structure and the cover structure are embodied in a monolithic body structure. 4. The fluidic device of claim 1 , further comprising at least one functionalization material arranged over at least a portion of the active region. 5. The fluidic device of claim 4 , further comprising a self-assembled monolayer arranged between the at least one functionalization material and the top side electrode. 6. The fluidic device of claim 5 , further comprising an interface layer arranged between the self-assembled monolayer and the top side electrode. 7. The fluidic device of claim 6 , further comprising a hermeticity layer arranged between the interface layer and the top side electrode. 8. A method for biological or chemical sensing, the method comprising: supplying a fluid containing an analyte into the fluidic passage of the fluidic device according to claim 4 , wherein said supplying is configured to cause at least some of the analyte to bind to the at least one functionalization material; inducing a bulk acoustic wave in the active region; and sensing a change in at least one of an amplitude-magnitude property, a frequency property, or a phase property of the at least one bulk acoustic wave resonator structure to indicate at least one of presence or quantity of target species bound to the at least one functionalization material. 9. The fluidic device of claim 1 , wherein the piezoelectric material comprises a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate. 10. The fluidic device of claim 1 , wherein a portion of the base structure comprises at least one anchoring region having at least one anchoring feature comprising at least one of: (i) at least one recess or (ii) at least one protrusion, and wherein the footer portion overlies the anchoring region. 11. The fluidic device of claim 10 , wherein the at least one anchoring feature comprises a vertical dimension of least about 1 micron. 12. The fluidic device of claim 10 , wherein the at least anchoring features comprises a plurality of recesses and a plurality of protrusions. 13. A fluidic device comprising: a base structure comprising: (i) a substrate; and (ii) at least one bulk acoustic wave resonator structure supported by the substrate, the at least one bulk acoustic wave resonator structure including a piezoelectric material, a top side electrode arranged over a portion of the piezoelectric material, a bottom side electrode arranged below at least a portion of the piezoelectric material, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region, at least one functionalization material arranged over at least a portion of the active region; a self-assembled monolayer arranged between the at least one functionalization material and the top side electrode; an interface layer arranged between the self-assembled monolayer and the top side electrode; a hermeticity layer arranged between the interface layer and the top side electrode; and a wall structure arranged over at least a portion of the base structure and defining lateral boundaries of a fluidic passage arranged to receive a fluid and containing the active region; wherein: the wall structure comprises a footer portion and an upper wall portion that protrudes upward from the footer portion; the footer portion is arranged between the upper wall portion and the base structure; and the footer portion comprises a width that exceeds a width of the upper wall portion. 14. The fluidic device of claim 13 , further comprising a cover structure arranged over the wall structure and defining an upper boundary of the fluidic passage. 15. The fluidic device of claim 14 , wherein the wall structure and the cover structure are embodied in a monolithic body structure. 16. The fluidic device of claim 14 , wherein the cover structure defines an inlet port to the fluidic passage and outlet port from the fluidic passage. 17. The fluidic device of claim 13 , wherein the piezoelectric material comprises a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate. 18. The fluidic device of claim 13 , wherein a portion of the base structure comprises at least one anchoring region having at least one anchoring feature comprising at least one of: (i) at least one recess or (ii) at least one protrusion, and wherein the footer portion overlies the anchoring region. 19. The fluidic device of claim 18 , wherein the at least one anchoring feature comprises a vertical dimension of least about 1 micron. 20. The fluidic device of claim 18 , wherein the at least anchoring features comprises a plurality of recesses and a plurality of protrusions. 21. A fluidic device comprising: a base structure comprising: (i) a substrate; and (ii) at least one bulk acoustic wave resonator structure supported by the substrate, the at least one bulk acoustic wave resonator structure including a piezoelectric material, a top side electrode arranged over a portion of the piezoelectric material, a bottom side electrode arranged below at least a portion of the piezoelectric material, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region, a self-assembled monolayer arranged over at least a portion of the active region; an interface layer arranged between the self-assembled monolayer and the top side electrode; a hermeticity layer arranged between the interface layer and the top side electrode; and a wall structure arranged over at least a portion of the base structure and defining lateral boundaries of a fluidic passage arranged to receive a fluid and containing the active region; wherein: the wall structure comprises a footer portion and an upper wall portion that protrudes upward from the footer portion; the footer portion is arranged between the upper wall portion and the base structure; and the footer portion comprises a width that exceeds a width of the upper wal

Assignees

Inventors

Classifications

  • Surface waves, e.g. Rayleigh waves, Love waves · CPC title

  • of bulk acoustic wave devices · CPC title

  • Shear waves, transverse waves, horizontally polarised waves · CPC title

  • by measuring attenuation of acoustic waves · CPC title

  • Adsorption, desorption, surface mass change, e.g. on biosensors · CPC title

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Frequently asked questions

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What does patent US10330642B2 cover?
Lateral boundaries of a fluidic passage of a fluidic device incorporating at least one BAW resonator structure are fabricated with photosensitive materials (e.g., photo definable epoxy, solder mask resist, or other photoresist), allowing for high aspect ratio, precisely dimensioned walls. Resistance to delamination and peeling between a wall structure and a base structure is enhanced by providi…
Who is the assignee on this patent?
Qorvo Us Inc
What technology area does this patent fall under?
Primary CPC classification G01N29/022. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 25 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).