Superalloy target
US-11866805-B2 · Jan 9, 2024 · US
Cu—Ga—In—Na target
US10329661B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10329661-B2 |
| Application number | US-201414764007-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2014 |
| Priority date | Jan 31, 2013 |
| Publication date | Jun 25, 2019 |
| Grant date | Jun 25, 2019 |
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- Title
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Abstract
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A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.
First claim
Opening claim text (preview).
The invention claimed is: 1. A sputtering target, comprising an alloy consisting of 5 to 70 at % of at least one element selected from the group consisting of Ga and In, and 0.1 to 15 at % of Na, and a remainder Cu and impurities, and the sputtering target containing at least one Na-containing intermetallic phase. 2. The sputtering target according to claim 1 , wherein said at least one Na-containing intermetallic phase is selected from the group consisting of the intermetallic Ga—Na phases, the intermetallic In-Na phases and the intermetallic Ga—In—Na phases. 3. The sputtering target according to claim 1 , wherein said at least one Na-containing intermetallic phase is selected from the group consisting of NaGa 4 , Na 5 Ga 8 , Na 7 Ga 13 , Na 22 Ga 39 , Naln, Na 2 In, Na 7 In 12 , Na 15 In 27 and Na 17 Ga 29 In 12 . 4. The sputtering target according to claim 1 , wherein said Na-containing intermetallic phase is present embedded in homogeneous distribution in a matrix of at least one element selected from the group consisting of Cu, Ga and In. 5. The sputtering target according to claim 1 , wherein said remainder Cu amounts to more than 30 at % of Cu. 6. The sputtering target according to claim 1 , wherein a content of said at least one element selected from the group consisting of Ga and In amounts to between 20 and 65 at %. 7. The sputtering target according to claim 1 , wherein a ratio in at % of the constituents Ga/(Ga+In) lies between 0.15 and 0.35. 8. The sputtering target according to claim 1 , containing between 1 and 5 at % Na. 9. The sputtering target according to claim 1 , wherein the sputtering target is formed as a plate, a disc, a rod, a tube, or a body of complex shape.
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Classifications
by using pressure rollers · CPC title
Sintering only · CPC title
Hot isostatic pressing · CPC title
by extruding · CPC title
Processes characterised by the sequence of their steps · CPC title
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- What does patent US10329661B2 cover?
- A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.
- Who is the assignee on this patent?
- Plansee Se
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 25 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).