Chemical mechanical planarization slurry and method for forming same

Patent metadata

Field	Value
Publication number	US-10329455-B2
Application number	US-201715710897-A
Country	US
Kind code	B2
Filing date	Sep 21, 2017
Priority date	Sep 23, 2016
Publication date	Jun 25, 2019
Grant date	Jun 25, 2019

Abstract

A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof, and a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.

First claim

What is claimed is:

1. A CMP slurry comprising:
a carrier;
a particulate material within the carrier comprising an alumina-containing material, wherein the alumina-containing material comprises a majority content of alpha alumina and a transition phase alumina at a content of at least 0.5 wt. % and not greater than 20 wt. % for a total weight of the particulate material;
an oxidizer comprising at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof; and
a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.

2. The CMP slurry of claim 1 , further comprising an acidic pH.

3. The CMP slurry of claim 2 , wherein the pH is not greater than 6 and at least 0.5.

4. The CMP slurry of claim 1 , wherein the average material removal rate index (MRR) is at least 510 nm/hr.

5. The CMP slurry of claim 1 , wherein the average material removal rate index (MRR) is not greater than 2000 nm/hr.

6. The CMP slurry of claim 1 , wherein the average roughness index is not greater than 4.5 Angstroms.

7. The CMP slurry of claim 1 , further wherein the average roughness index is at least 0.1 Angstroms.

8. The CMP slurry of claim 1 , wherein the carrier includes water.

9. The CMP slurry of claim 1 , wherein the particulate material is present in an amount of at least 0.5 wt % and not greater 30 wt % for the total weight of the composition.

10. The CMP slurry of claim 1 , further comprising one or more additives selected from the group consisting of surfactants, dispersants, chelating agents, buffers, and pH modifiers.

11. The CMP slurry of claim 10 , wherein a total content of the additives is within a range including at least 1 g/L and not greater than 20 g/L.

12. The CMP slurry of claim 1 , wherein the oxidizer comprises potassium permanganate (KMnO 4 ).

13. The CMP slurry of claim 1 , wherein the oxidizer consists of potassium permanganate (KMnO 4 ).

14. The CMP slurry of claim 1 , wherein the oxidizer is present in an amount within a range including at least 1 g/L and not greater than 20 g/L.

15. The CMP slurry of claim 1 , further comprising a co-particle including at least one of an oxide, a carbide, a nitride, a boride, diamond or any combination thereof.

16. The CMP slurry of claim 15 , wherein the co-particle includes at least one element selected from the group of aluminum, calcium, sodium, silicon, titanium, cerium, magnesium, manganese, iron, or any combination thereof.

17. The CMP slurry of claim 15 , wherein the co-particle comprises a silicate.

18. The CMP slurry of claim 15 , wherein the co-particle comprises an aluminosilicate.

19. The CMP slurry of claim 1 , wherein the CMP slurry is used to polish a substrate comprising a Group III-N semiconductor material or a Group III-V semiconductor material or a Group IV semiconductor material.

Assignees

• Saint Gobain Ceramics

Inventors

• Sines Ian T
• Kwapong Angela
• Mulder Carlijn L
• Ward Douglas E
• Le Roux Vianney

Classifications

• H10P90/129

  by polishing · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09K3/14

  Anti-slip materials; Abrasives {(products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; friction compositions for brakes or clutches F16D69/02; polishing of semi-conductors H10P52/40)} · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title