Photoexcitation material
US-10016746-B2 · Jul 10, 2018 · US
Method for producing a photoexcitation material
US10328419B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10328419-B2 |
| Application number | US-201816006939-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 13, 2018 |
| Priority date | May 31, 2016 |
| Publication date | Jun 25, 2019 |
| Grant date | Jun 25, 2019 |
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Abstract
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A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for producing a photoexcitation material, the method comprising: preparing a substrate; and depositing a powder of a material over the substrate using a He carrier gas according to a nano particle deposition method to form a thin film, wherein the thin film contains a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, and a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis. 2. The method according to claim 1 , wherein the He carrier gas is ejected at a flow rate from a nozzle, together with the powder of the material, onto the substrate. 3. The method according to claim 1 , wherein the thin film includes the photoexcitation material which is represented by Ga x N x Zn 1.00-x O 1.00-x , where x falls within a range of 0.00<x<1.00. 4. The method according to claim 3 , wherein x falls within a range of 0.25≤x≤0.75. 5. The method according to claim 4 , wherein the photoexcitation material has band gap energy of 2.5 eV or less.
Assignees
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Classifications
Electricity · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
- B01J27/24Primary
Nitrogen compounds · CPC title
Electricity · mapped topic
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- What does patent US10328419B2 cover?
- A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a …
- Who is the assignee on this patent?
- Fujitsu Ltd
- What technology area does this patent fall under?
- Primary CPC classification B01J27/24. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Jun 25 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).