Hot swap controller with multiple current limits

Patent metadata

Field	Value
Publication number	US-10326436-B2
Application number	US-201715719665-A
Country	US
Kind code	B2
Filing date	Sep 29, 2017
Priority date	Sep 29, 2017
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

A hot swap controller circuit includes a comparator and current control circuitry. The comparator is configured to compare voltage across a power transistor controlled by the hot swap controller circuit to a predetermined threshold voltage. The current control circuitry is coupled to the comparator. The current control circuitry is configured to limit current through the power transistor to no higher than a predetermined high current based on the voltage across the transistor being less than the predetermined threshold voltage. The current control circuitry is also configured to limit the current through the transistor to be no higher than a predetermined low current based on the voltage across the transistor being greater than the predetermined threshold voltage. The predetermined high current is greater than the predetermined low current.

First claim

What is claimed is:

1. An electronic device, comprising:
a transistor configured to switch power to the electronic device; and
a hot swap controller configured to control operation of the transistor, the hot swap controller comprising:
a comparator configured to compare voltage across the transistor to a predetermined threshold voltage; and
current control circuitry coupled to the comparator and comprising:
an amplifier configured to compare a voltage across a sense resistor to a current limit reference voltage;
wherein the current control circuitry is configured to:
limit current through the transistor to no higher than a first predetermined current based on the voltage across the transistor being less than the predetermined threshold voltage; and
limit the current through the transistor to be no higher than a second predetermined current based on the voltage across the transistor being greater than the predetermined threshold voltage;
wherein the first predetermined current is greater than the second predetermined current.

2. The electronic device of claim 1 , further comprising a voltage divider connected to a terminal of the transistor to produce an input to the comparator that is representative of the voltage across the transistor.

3. The electronic device of claim 1 , wherein the sense resistor is coupled to the transistor.

4. The electronic device of claim 3 , wherein the current control circuitry comprises selector configured to provide the current limit reference voltage to the amplifier.

5. The electronic device of claim 1 , wherein the current control circuitry is configured to:
set the current limit reference voltage to a first value based on the voltage across the transistor being less than the predetermined threshold voltage; and
set the current limit reference voltage to a second value based on the voltage across the transistor being greater than the predetermined threshold voltage.

6. The electronic device of claim 5 , wherein the first value is greater than the second value.

7. The electronic device of claim 1 , wherein the hot swap controller comprises a reference voltage generator coupled to the comparator, and the comparator is configured to compare the voltage across the transistor to an output of the reference voltage generator.

8. The electronic device of claim 1 , wherein the transistor is an N-channel power metal oxide semiconductor field effect transistor.

9. A hot swap controller circuit, comprising:
a comparator configured to compare voltage across a power transistor controlled by the hot swap controller circuit to a predetermined threshold voltage; and
current control circuitry coupled to the comparator and comprising an amplifier configured to compare a voltage across a current sense resistor to a current limit reference voltage;
wherein the current control circuitry is configured to:
limit current through the power transistor to no higher than a predetermined high current based on the voltage across the transistor being less than the predetermined threshold voltage; and
limit the current through the transistor to be no higher than a predetermined low current based on the voltage across the transistor being greater than the predetermined threshold voltage;
wherein the predetermined high current is greater than the predetermined low current.

10. The hot swap controller circuit of claim 9 , further comprising a resistor coupled to: an input of the comparator, a reference voltage, and an input terminal of the hot swap controller circuit; wherein the resistor is configured to operate as part of a voltage divider to produce an input to the comparator that is representative of the voltage across the power transistor.

11. The hot swap controller circuit of claim 9 , wherein the current control circuitry comprises a selector configured to provide the current limit reference voltage to the amplifier.

12. The hot swap controller circuit of claim 9 , wherein the current control circuitry is configured to set the current limit reference voltage to a first value based on the voltage across the transistor being less than the predetermined threshold voltage.

13. The hot swap controller circuit of claim 12 , wherein the current control circuitry is configured to set the current limit reference voltage to a second value based on the voltage across the transistor being greater than the predetermined threshold voltage.

14. The hot swap controller circuit of claim 13 , wherein the first value is greater than the second value.

15. The hot swap controller circuit of claim 9 , further comprising a reference voltage generator coupled to the comparator, and wherein the comparator is configured to compare the voltage across the transistor to an output of the reference voltage generator.

16. The hot swap controller circuit of claim 9 , wherein the current control circuitry is configured to drive a control terminal of the power transistor to limit the current through the power transistor.

17. A method for hot swapping, comprising:
comparing voltage across a power transistor to a predetermined threshold voltage;
comparing, by an amplifier, a voltage across a current sense resistor to a current limit reference voltage;
limiting current through the power transistor to no higher than a first predetermined current based on the voltage across the power transistor being less than the predetermined threshold voltage; and
limiting the current through the power transistor to be no higher than a second predetermined current based on the voltage across the power transistor being greater than the predetermined threshold voltage;
wherein the first predetermined current is greater than the second predetermined current.

18. The method of claim 17 , further comprising measuring current flowing through the power transistor by measuring a voltage drop across the sense resistor, wherein the sense resistor is connected in series with the power transistor.

19. The method of claim 18 , further comprising limiting the first predetermined current based on a first predetermined voltage drop across the sense resistor.

20. The method of claim 19 , further comprising limiting the second predetermined current based on a second predetermined voltage drop across the sense resistor, wherein the first predetermined voltage drop is greater than the second predetermined voltage drop.

Assignees

• Texas Instruments Inc

Inventors

• Rogachev Artem Andreevich

Classifications

• H02H9/004

  in connection with live-insertion of plug-in units (involving communication with a central processing unit G06F13/40) · CPC title

• G06F13/4081 Primary

  Live connection to bus, e.g. hot-plugging (current or voltage limitation during live insertion H02H9/004) · CPC title

• H03K5/19

  Monitoring patterns of pulse trains (indicating amplitude G01R19/00; indicating frequency G01R23/00; measuring characteristics of individual pulses G01R29/02) · CPC title

• H03K17/122

  in field-effect transistor switches · CPC title

• H03K17/08122 Primary

  in field-effect transistor switches · CPC title