High impedance RF MEMS transmission devices and method of making the same

Patent metadata

Field	Value
Publication number	US-10326200-B2
Application number	US-201715786696-A
Country	US
Kind code	B2
Filing date	Oct 18, 2017
Priority date	Oct 18, 2017
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

An RF transmission system includes an RF source that provides an RF input and one or more RF MEMS transmission devices coupled to the RF source to receive the RF input therefrom and generate output signals for transmission to an RF load. Each of the RF MEMS transmission devices comprises a substrate, a conducting line formed on the substrate to provide signal transmission paths between a signal input of the RF MEMS transmission device and a signal output of the RF MEMS transmission device, and a plurality of switching elements positioned along the conducting line and selectively controllable to define the signal transmission paths between the signal input and the signal output. Each of the RF source and the RF load has a first characteristic impedance and the one or more RF MEMS transmission devices have a second characteristic impedance that is greater than the first characteristic impedance.

First claim

What is claimed is:

1. An radio frequency (RF) transmission system comprising:
an RF source that provides an RF input;
one or more RF microelectromechanical system (MEMS) transmission devices coupled to the RF source to receive the RF input therefrom and generate output signals for transmission to an RF load, wherein each of the one or more RF MEMS transmission devices comprises:
a substrate;
a conducting line formed on the substrate to provide signal transmission paths between a signal input of the RF MEMS transmission device and a signal output of the RF MEMS transmission device; and
a plurality of switching elements positioned along the conducting line and selectively controllable to define the signal transmission paths between the signal input and the signal output;

wherein each of the RF source and the RF load has a first characteristic impedance and the one or more RF MEMS transmission devices have a second characteristic impedance that is greater than the first characteristic impedance.

2. The RF transmission system of claim 1 further comprising:
a first impedance transformer positioned between the RF source and the one or more RF MEMS transmission devices to increase and match the first characteristic impedance of the RF source to the second characteristic impedance of the one or more RF MEMS transmission devices; and
a second impedance transformer positioned between the one or more RF MEMS transmission devices and the RF load to decrease and match the second characteristic impedance of the one or more RF MEMS transmission devices to the first characteristic impedance of the RF load.

3. The RF transmission system of claim 2 wherein the first and second impedance transformers are provided as separate components from the RF MEMS transmission devices or formed on the substrate of the RF MEMS transmission devices so as to be part of the RF MEMS transmission devices.

4. The RF transmission system of claim 1 wherein the first characteristic impedance of the RF source and the RF load is approximately 50 Ohms and the second characteristic impedance of the one or more RF MEMS transmission devices is approximately 150 Ohms.

5. The RF transmission system of claim 4 wherein the substrate has a thickness and the conducting lines each have a length, width, and thickness, and wherein at least one of the thickness of the substrate and the width of the conducting lines is such that, when taken in combination with others of the thickness of the substrate and the length, width, and thickness of the conducting lines, the characteristic impedance of the RF MEMS transmission device is approximately 150 Ohms.

6. The RF transmission system of claim 5 wherein the thickness of the substrate is between 100 microns and 500 microns.

7. The RF transmission system of claim 5 wherein the width of the conductive signal lines is between 20 microns and 200 microns.

8. The RF transmission system of claim 1 wherein operation of the one or more RF MEMS transmission devices at the second characteristic impedance decreases insertion losses therein as compared to operation at the first characteristic impedance.

9. The RF transmission system of claim 1 wherein each of the one or more RF MEMS transmission devices comprises a true time delay (TTD) module, with the plurality of switching elements comprising:
an input switching element positioned at a first end of each of the plurality of time delay lines; and
an output switching element positioned at a second end of each of the plurality of time delay lines;
with the input switching element and the output switching element being selectively controllable between conducting and non-conducting states to form signal transmission paths of varying lengths between the signal input and the signal output.

10. The RF transmission system of claim 1 wherein the substrate comprises one of glass, alumina, ceramic, LTCC, HTCC, quartz, polyimide, gallium arsenide, silicon, or germanium.

11. The RF transmission system of claim 1 further comprising a ground plane attached to the substrate, with the ground plane and the conducting line forming an RF transmission line for the RF MEMS transmission device.

12. A method of manufacturing a radio frequency (RF) microelectromechanical system (MEMS) transmission device comprising:
forming a substrate;
forming a signal line on a top surface of the substrate, the signal line comprising a plurality of line portions;
coupling a MEMS switching device to the signal line, the MEMS switching device operable in a closed position and an open position to selectively couple and decouple respective line portions of the signal line to transmit an RF signal therethrough;
wherein forming the substrate and the signal line comprises selectively controlling a thickness of the substrate and a width of the signal line relative to one another such that, when taken in combination with a length and thickness of the signal line and material properties of the substrate and signal line, a characteristic impedance of the RF MEMS transmission device is higher than a 50 Ohm characteristic impedance of an RF source and an RF load to which the RF MEMS transmission device is connected.

13. The method of claim 12 wherein the thickness of the substrate and the width of the signal line are selectively controlled to provide a characteristic impedance in the RF MEMS transmission device of approximately 150 Ohms.

14. The method of claim 13 further comprising providing an impedance transformer at each of a signal input and a signal output of the RF MEMS transmission device, so as to provide impedance matching between the 50 Ohm RF source and RF load and the approximately 150 Ohm RF MEMS transmission device, the impedance transformers being formed on the substrate of the RF MEMS transmission device or provided as separate and distinct components.

15. The method of claim 14 wherein the plurality of line portions of the signal line comprise a plurality of delay lines defining alternative paths between the signal input and the signal output of the RF MEMS transmission device, so as to form a true time delay (TTD) module.

16. The method of claim 12 wherein selectively controlling the thickness of the substrate and the width of the signal line comprises forming the substrate to have a thickness of between 100 microns and 500 microns and forming the signal line to have a width of between 20 microns and 200 microns.

17. A radio frequency (RF) microelectromechanical system (MEMS) transmission device comprising:
a substrate having a thickness;
a plurality of MEMS devices disposed on a top surface of the substrate; and
conductive signal lines formed on the top surface of the substrate, the conductive signal lines each having a length, width, and thickness;
wherein the thickness of the substrate and the width of the conductive signal lines is such that, when taken in combination with others of the thickness of the substrate and the length, width, and thickness of the conductive signal lines, a characteristic impedance of the RF MEMS transmission device is approximately 150 Ohms.

18. The RF MEMS transmission device of claim 17 wherein the thickness of the substrate is between 150 microns and 500 microns.

19. The RF MEMS transmission device of claim 17 wherein the width of the conductive signal lines is between 20 microns and 200 microns.

20. The RF MEMS transmission device of claim 17 further comprising a ground plane positioned on a bottom surface of the substrate, with the ground plane and the plur

Assignees

• Gen Electric

Inventors

• Iannotti Joseph Alfred

Classifications

• B81B7/0006

  Interconnects · CPC title

• H01P1/127

  Strip line switches · CPC title

• H01P1/184

  Strip line phase-shifters (H01P1/181, H01P1/185, H01P1/19 take precedence) · CPC title

• H01Q3/2682 Primary

  Time delay steered arrays · CPC title

• H01H1/0036

  Switches making use of microelectromechanical systems [MEMS] (for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009) · CPC title