Chip-stack structure

Patent metadata

Field	Value
Publication number	US-10325873-B2
Application number	US-201715673223-A
Country	US
Kind code	B2
Filing date	Aug 9, 2017
Priority date	Jul 21, 2017
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

A chip-stack structure including a first chip and a second chip located on the first chip is provided. The first chip includes a first substrate, a first interconnect structure, a first pad, and a first contact conductor. The first interconnect structure is located on a first surface of the first substrate. The first pad is located on the first interconnect structure. The first contact conductor is located in the first substrate and exposed on a second surface of the first substrate opposite to the first surface. The second chip includes a second substrate, a second interconnect structure, a second pad, and a second contact conductor. The second interconnect structure is located on the second substrate. The second pad is located on the second interconnect structure. The second contact conductor is located in the second substrate, wherein the first contact conductor is directly physically in contact with the second pad.

First claim

What is claimed is:

1. A chip-stack structure, comprising:
a first chip, comprising:
a first substrate;
a first interconnect structure located on a first surface of the first substrate;
a first pad located on the first interconnect structure; and
a first contact conductor located in the first substrate and exposed on a second surface of the first substrate opposite to the first surface; and
a second chip located on the first chip, the second chip comprising:
a second substrate;
a second interconnect structure located on the second substrate;
a second pad located on the second interconnect structure; and
a second contact conductor located in the second substrate,
wherein the first contact conductor is directly physically in contact with the second pad.

2. The chip-stack structure of claim 1 , wherein the first contact conductor does not cover the second surface of the first substrate.

3. The chip-stack structure of claim 1 , further comprising:
a carrier plate located below the first chip.

4. The chip-stack structure of claim 3 , wherein the carrier plate comprises a carrier chip, and the first pad of the first chip is connected to a pad of the carrier chip.

5. The chip-stack structure of claim 4 , wherein a thickness of the carrier chip is greater than a thickness of the first chip.

6. The chip-stack structure of claim 1 , further comprising:
a dielectric layer located between the first chip and the second chip.

7. The chip-stack structure of claim 1 , wherein an active surface of the second chip faces a back of the first chip.

8. A chip-stack structure, comprising:
a first chip, comprising:
a first substrate;
a first interconnect structure located on a first surface of the first substrate;
a first pad located on the first interconnect structure; and
a first contact conductor located in the first substrate and exposed on a second surface of the first substrate opposite to the first surface; and
a second chip located on the first chip, the second chip comprising:
a second substrate;
a second interconnect structure located on the second substrate;
a second pad located on the second interconnect structure; and
a second contact conductor located in the second substrate,
wherein the first contact conductor is directly physically in contact with the second pad, the first contact conductor has a width A, the second pad has a width B, and 5≤B/A.

9. The chip-stack structure of claim 8 , wherein the first contact conductor does not cover the second surface of the first substrate.

10. The chip-stack structure of claim 8 , further comprising:
a carrier plate located below the first chip.

11. The chip-stack structure of claim 10 , wherein the carrier plate comprises a carrier chip, and the first pad of the first chip is connected to a pad of the carrier chip.

12. The chip-stack structure of claim 11 , wherein a thickness of the carrier chip is greater than a thickness of the first chip.

13. The chip-stack structure of claim 8 , further comprising:
a dielectric layer located between the first chip and the second chip.

14. The chip-stack structure of claim 8 , wherein an active surface of the second chip faces a back of the first chip.

Assignees

• United Microelectronics Corp

Inventors

• Lin Ming-Tse

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10W20/0249

  wherein the through-semiconductor via protrudes from backsides of the chips, wafers or substrates during the manufacture · CPC title

• H10W20/2134

  TSVs extending from the semiconductor wafer into back-end-of-line layers · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title