Sputtering target for forming magnetic recording film and process for producing same

US10325762B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10325762-B2
Application numberUS-201314384184-A
CountryUS
Kind codeB2
Filing dateJul 10, 2013
Priority dateJul 20, 2012
Publication dateJun 18, 2019
Grant dateJun 18, 2019

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Abstract

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A C-containing FePt-based sputtering target for forming a magnetic recording film, wherein a ratio of an X-ray diffraction peak intensity of a graphite (002) plane in a cross section perpendicular to a sputtering surface relative to an X-ray diffraction peak intensity of a graphite (002) plane in a plane horizontal to a sputtering surface is 2 or more. A magnetic recording layer is configured from a magnetic phase such as an Fe—Pt alloy and a nonmagnetic phase that separates the magnetic phase, and the sputtering target is a ferromagnetic material sputtering target in which carbon is used as a nonmagnetic phase material. When sputtered, the ferromagnetic material sputtering target is effective in preventing the generation of particles caused by an abnormal discharge originating from carbon, which is prone to aggregate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A sputtering target comprising an Fe—Pt system sintered alloy containing C for forming a magnetic recording film, having a composition consisting of C in an amount of 10 mol % or more and 70 mol % or less, Pt in an amount of 5 mol % or more and 60 mol % or less, one or more elements selected from the group consisting of B, Ru, Ag, Au, and Cu in a total amount of 0.5 mol % or more and 10 mol % or less, one or more materials selected from the group consisting of oxides, nitrides, carbides, and carbonitrides, and a remainder being Fe and unavoidable impurities, and having a sintered structure containing a dispersion of particles of a graphite phase having a flat or tabular shape with an average thickness of 10 μm or less in a cross section perpendicular to a sputtering face of the sputtering target and originating from a flaked graphite powder as a raw material, wherein the sputtering target has a ratio (X/Y) of 2 or more for an intensity (X) of an X-ray diffraction peak of a (002) plane of the graphite phase measured in a cross section of the sputtering target parallel to the sputtering face of the sputtering target and an intensity (Y) of an X-ray diffraction peak of a (002) plane of the graphite phase measured in a cross section of the sputtering target perpendicular to the sputtering face. 2. The sputtering target according to claim 1 , wherein the sputtering target has a ratio (Y 001 /Y 100 ) of 1.0 or less for an intensity (Y 001 ) of an X-ray diffraction peak of a (001) plane of the Fe—Pt system sintered alloy measured in the cross section of the sputtering target perpendicular to the sputtering face and an intensity (Y 100 ) of an X-ray diffraction peak of a (100) plane of the Fe—Pt system sintered alloy measured in the cross section of the sputtering target perpendicular to the sputtering face, and wherein the sputtering target has a ratio (X 001 /X 100 ) of 1.0 or more for an intensity (X 001 ) of an X-ray diffraction peak of a (001) plane of the Fe—Pt system sintered alloy measured in the cross section parallel to the sputtering face and an intensity (X 100 ) of an X-ray diffraction peak of a (100) plane of the Fe—Pt system sintered alloy measured in the cross section parallel to the sputtering face. 3. A method for manufacturing the sputtering target according to claim 1 , wherein raw material powders including a flaked graphite powder and a metal or alloy powder are subject together to pulverization and mixing, and are thereafter compacted, and an obtained compact is subject to uniaxial pressure sintering. 4. The method according to claim 3 , wherein, before the flaked graphite powder and the metal or alloy powder are subject together to pulverization and mixing, the metal or alloy powder is subject to treatment in a ball mill or agitation mill to provide grains of the metal or alloy powder with a flat or tabular shape. 5. A method of manufacturing the sputtering target according to claim 1 , comprising the steps of: mixing raw material powders including a flaked graphite powder and a metal or alloy powder to produce a composition of C in an amount of 10 mol % or more and 70 mol % or less, Pt in an amount of 5 mol % or more and 60 mol % or less, and Fe; compacting the raw material powders after said mixing step to produce a compact; subjecting the compact to uniaxial pressure sintering. 6. The method according to claim 5 , further comprising the step of subjecting the metal or alloy powder to treatment in a ball or agitation mill to provide grains of the metal or alloy powder with a flat or tabular shape before said mixing step.

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Classifications

  • Treatment of metallic powder (mixing with lubricating or binding agents or with organic material B22F1/10) · CPC title

  • Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

  • simultaneously · CPC title

  • Operations & Transport · mapped topic

  • Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ · CPC title

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What does patent US10325762B2 cover?
A C-containing FePt-based sputtering target for forming a magnetic recording film, wherein a ratio of an X-ray diffraction peak intensity of a graphite (002) plane in a cross section perpendicular to a sputtering surface relative to an X-ray diffraction peak intensity of a graphite (002) plane in a plane horizontal to a sputtering surface is 2 or more. A magnetic recording layer is configured f…
Who is the assignee on this patent?
Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/3429. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 18 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).