Magnetic detection device and semiconductor integrated circuit for amplifying magnetic detection signal
US-11860245-B2 · Jan 2, 2024 · US
US10324143B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10324143-B2 |
| Application number | US-201715472343-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 29, 2017 |
| Priority date | Sep 30, 2010 |
| Publication date | Jun 18, 2019 |
| Grant date | Jun 18, 2019 |
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In various embodiments, a Hall sensor arrangement for the redundant measurement of a magnetic field may include a first Hall sensor on a top side of a first semiconductor substrate; a second Hall sensor on a top side of a second semiconductor substrate; a carrier having a top side and an underside; wherein the first Hall sensor is arranged on the top side of the carrier and the second Hall sensor is arranged on the underside of the carrier; and wherein the measuring area of the first Hall sensor projected perpendicularly onto the carrier at least partly overlaps the measuring area of the second Hall sensor projected perpendicularly onto the carrier.
Opening claim text (preview).
What is claimed is: 1. A sensor arrangement configured to redundantly measure a magnetic field, the sensor arrangement comprising: a carrier; a first sensor on a first side of the carrier configured to measure a component of the magnetic field perpendicular to the carrier; and a second sensor on a second side of the carrier configured to measure the component of the magnetic field perpendicular to the carrier; wherein the first sensor and the second sensor redundantly measure the same component of the magnetic field perpendicular to the carrier. 2. The sensor arrangement according to claim 1 , wherein the first sensor comprises a Hall sensor in a first semiconductor substrate. 3. The sensor arrangement according to claim 2 , wherein the first sensor further comprises an integrated circuit in the first semiconductor substrate. 4. The sensor arrangement according to claim 3 , wherein the first sensor is electrically coupled to one or more first contacts. 5. The sensor arrangement according to claim 1 , wherein the second sensor comprises a Hall sensor in a second semiconductor substrate. 6. The sensor arrangement according to claim 5 , wherein the second sensor further comprises an integrated circuit in the second semiconductor substrate. 7. The sensor arrangement according to claim 6 , wherein the second sensor is electrically coupled to one or more second contacts. 8. A sensor arrangement configured to redundantly measure a magnetic field, the sensor arrangement comprising: a first sensor configured to measure a perpendicular component of the magnetic field permeating the first sensor; and a second sensor configured to measure a perpendicular component of the magnetic field permeating the second sensor; wherein the first sensor and the second sensor are arranged to redundantly measure the same perpendicular component of the magnetic field. 9. The sensor arrangement according to claim 8 , wherein the first sensor comprises a Hall sensor in a first semiconductor substrate. 10. The sensor arrangement according to claim 9 , wherein the first sensor further comprises an integrated circuit in the first semiconductor substrate. 11. The sensor arrangement according to claim 10 , wherein the first sensor is electrically coupled to one or more first contacts. 12. The sensor arrangement according to claim 8 , wherein the second sensor comprises a Hall sensor in a second semiconductor substrate. 13. The sensor arrangement according to claim 12 , wherein the second sensor further comprises an integrated circuit in the second semiconductor substrate. 14. The sensor arrangement according to claim 13 , wherein the second sensor is electrically coupled to one or more second contacts. 15. A sensor arrangement configured to measure a magnetic field, the sensor arrangement comprising: a carrier; a first sensor configured to measure a first component of the magnetic field perpendicular to the carrier; and a second sensor configured to measure a second component of the magnetic field parallel to the carrier; wherein the first sensor and the second sensor are arranged to measure the same magnetic field permeating the first sensor and the second sensor and wherein the first component and the second component together form a vector representing the same magnetic field permeating the first sensor and the second sensor. 16. The sensor arrangement according to claim 15 , wherein the first sensor comprises a magnetic field sensor in a first semiconductor substrate. 17. The sensor arrangement according to claim 16 , wherein the magnetic field sensor of the first sensor is a Hall sensor. 18. The sensor arrangement according to claim 16 , wherein the first sensor further comprises an integrated circuit in the first semiconductor substrate. 19. The sensor arrangement according to claim 15 , wherein the second sensor comprises a magnetic field sensor in a second semiconductor substrate. 20. The sensor arrangement according to claim 19 , wherein the second sensor further comprises an integrated circuit in the second semiconductor substrate.
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
Hall effect devices · CPC title
using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title
Redundant systems, e.g. using two independent measuring systems and comparing the signals · CPC title
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