Pressure sensor and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10323996-B2
Application number	US-201715669972-A
Country	US
Kind code	B2
Filing date	Aug 7, 2017
Priority date	Jan 23, 2017
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

A pressure sensor and a manufacturing method thereof are provided. The pressure sensor includes a thin-film transistor (TFT) array and a pressure-sensitive layer covering the TFT array. The pressure-sensitive layer includes a plurality of insulating layers and one of one-directional materials arranged on the same plane and two-directional materials. The insulating layers and the one- or two-directional materials are alternately stacked so as to effectively enhance pressure resolution.

First claim

What is claimed is:

1. A pressure sensor, comprising:
a thin-film transistor array; and
a pressure-sensitive layer covering the thin-film transistor array, wherein the pres sure-sensitive layer comprises a plurality of one-directional materials arranged on the same plane and a plurality of insulating layers, and wherein the one-directional materials and the insulating layers are alternately stacked.

2. The pressure sensor of claim 1 , wherein the pressure-sensitive layer is inductive resistive.

3. The pressure sensor of claim 1 , wherein a diameter of the one-directional material is 5 nm to 100 nm.

4. The pressure sensor of claim 1 , wherein an aspect ratio of the one-directional material is greater than 100.

5. The pressure sensor of claim 1 , wherein the one-directional material comprises a metal nanowire, a carbon nanotube, or a metal oxide semiconductor.

6. The pressure sensor of claim 5 , wherein a metal of the metal nanowire comprises gold, silver, or copper.

7. The pressure sensor of claim 5 , wherein a metal oxide of the metal oxide semiconductor comprises zinc oxide, titanium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, nickel oxide, cobalt oxide, iron oxide, or tin oxide.

8. A pressure sensor, comprising:
a thin-film transistor array; and
a pressure-sensitive layer covering the thin-film transistor array, wherein the pressure-sensitive layer comprises a plurality of two-directional materials and a plurality of insulating layers, and wherein the two-directional materials and the insulating layers are alternately stacked.

9. The pressure sensor of claim 8 , wherein the two-directional material comprises graphene oxide or molybdenum disulfide.

10. The pressure sensor of claim 8 , wherein the pressure-sensitive layer is inductive resistive.

11. A manufacturing method of a pressure sensor, comprising:
forming a thin-film transistor array; and
forming a pressure-sensitive layer on the thin-film transistor array by 3D printing, wherein the pressure-sensitive layer comprises a plurality of insulating layers and a plurality of one-directional materials arranged on the same plane that are alternately stacked, or the pressure-sensitive layer comprises the plurality of insulating layers and a plurality of two-directional materials that are alternately stacked.

12. The manufacturing method of the pressure sensor of claim 11 , wherein a diameter of the one-directional material is 5 nm to 100 nm.

13. The manufacturing method of the pressure sensor of claim 11 , wherein an aspect ratio of the one-directional material is greater than 100.

14. The manufacturing method of the pressure sensor of claim 11 , wherein the one-directional material comprises a metal nanowire, a carbon nanotube, or a metal oxide semiconductor, and the two-directional material comprises graphene oxide or molybdenum disulfide.

15. The manufacturing method of the pressure sensor of claim 14 , wherein a metal of the metal nanowire comprises gold, silver, or copper, and a metal oxide of the metal oxide semiconductor comprises zinc oxide, titanium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, nickel oxide, cobalt oxide, iron oxide, or tin oxide.

Assignees

• Winbond Electronics Corp

Inventors

• Ho Yu-Hsuan
• Tsai Ming-Chih
• Hsieh Ming-Hung

Classifications

• H01L29/0673

  Electricity · mapped topic

• H01L29/0669

  Electricity · mapped topic

• G01L9/10 Primary

  by making use of variations in inductance {, i.e. electric circuits therefor} · CPC title

• H01L29/786

  Electricity · mapped topic

• C01B13/00

  Oxygen; Ozone; Oxides or hydroxides in general · CPC title