Electrical chemical plating process

Patent metadata

Field	Value
Publication number	US-10323332-B2
Application number	US-201615206321-A
Country	US
Kind code	B2
Filing date	Jul 11, 2016
Priority date	Jun 6, 2011
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

First claim

What is claimed is:

1. An electrical chemical plating process, comprising:
providing a semiconductor structure in an electro-plating machine;
providing a pre-electro-plating step, wherein the pre-electro-plating step lasts for 0.2 to 0.5 seconds and a current in the pre-electro-plating step is gradually increased at a same rate to reach a maximum value and is maintained at the maximum value;
after the pre-electro-plating step, performing a first-electro-plating step, wherein the first-electro-plating step is performed under a first fixed current followed by a first current; and
after the first-electro-plating step, performing a second-electro-plating step, wherein the second-electro-plating step is performed under a second fixed current, the first current in the first-electro-plating step is gradually increased at a same rate to reach the second fixed current.

2. The electrical chemical plating process according to claim 1 , wherein the pre-electro-plating step lasts for 0.3 seconds after the current exceeds a threshold current of the electro-plating machine.

3. The electrical chemical plating process according to claim 1 , wherein the pre-electro-plating step is performed under a fixed voltage and the fixed voltage is 0.8V.

4. The electrical chemical plating process according to claim 1 , wherein the maximum value of the current during the pre-electro-plating step is 10 A.

5. The electrical chemical plating process according to claim 1 , wherein the first fixed current is between 4.0 A to 5.0 A.

6. The electrical chemical plating process according to claim 5 , wherein the first fixed current is 4.5 A.

7. The electrical chemical plating process according to claim 1 , wherein the second fixed current is greater than the first fixed current.

8. The electrical chemical plating process according to claim 1 , wherein the second fixed current is between 6.0 A to 7.0 A.

Assignees

• United Microelectronics Corp

Inventors

• Lin Chun-Ling
• Lu Yen-Liang
• Hsu Chi-Mao
• Lin Chin-Fu
• Chen Chun-Hung
• Cheng Tsun-Min
• Tsai Chi-Ray

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• C25D5/00

  Electroplating characterised by the process; Pretreatment or after-treatment of workpieces · CPC title

• C25D7/123 Primary

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C25D5/54

  Electroplating of non-metallic surfaces (C25D7/12 takes precedence) · CPC title