Gas barrier laminate, member for electronic device, and electronic device

Patent metadata

Field	Value
Publication number	US-10323317-B2
Application number	US-201414780817-A
Country	US
Kind code	B2
Filing date	Mar 28, 2014
Priority date	Mar 29, 2013
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

The present invention is a gas barrier laminate comprising a base and a gas barrier unit, the gas barrier unit comprising at least two inorganic layers, at least one of the at least two inorganic layers being a silicon oxynitride layer, the silicon oxynitride layer including a composition-gradient region that has a thickness of 25 nm or more, the composition-gradient region being a region in which a content ratio of oxygen decreases and a content ratio of nitrogen increases in a thickness direction toward the base, and a ratio of the thickness of the composition-gradient region to the thickness of the entire silicon oxynitride layer being 0.15 or more. The present invention also relates to: an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. The present invention provides: a gas barrier laminate that exhibits a very high gas barrier capability and very high bendability, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member.

First claim

The invention claimed is:

1. A gas barrier laminate comprising a base and a gas barrier unit, wherein:
the gas barrier unit comprises at least two inorganic layers, the at least two inorganic layers comprising one or more silicon oxynitride layers and at least one inorganic deposited film,
a layer configuration of the gas barrier laminate is one of:
base/inorganic layer/silicon oxynitride layer,
base/primer layer/inorganic layer/silicon oxynitride layer,
base/primer layer/inorganic layer/silicon oxynitride layer/silicon oxynitride layer,
base/primer layer/silicon oxynitride layer/inorganic layer/inorganic layer/silicon oxynitride layer,
base/primer layer/inorganic layer/silicon oxynitride layer/silicon oxynitride layer,
base/primer layer/silicon oxynitride layer/inorganic layer/silicon oxynitride layer,
base/primer layer/inorganic layer/silicon oxynitride layer/inorganic layer/silicon oxynitride layer, or
base/primer layer/inorganic layer/silicon oxynitride layer/pressure-sensitive adhesive layer/inorganic layer/silicon oxynitride layer,

an outermost silicon oxynitride layer includes a composition-gradient region and a region other than the composition-gradient region, the composition-gradient region having a thickness of 25 nm or more, and being a region in which a content ratio of oxygen decreases and a content ratio of nitrogen increases in a thickness direction toward the base,
a ratio of the thickness of the composition-gradient region to a thickness of the entire outermost silicon oxynitride layer is 0.15 or more,
a difference between a maximum value and a minimum value of a content rate of oxygen atoms with respect to a total content of oxygen atoms, nitrogen atoms, and silicon atoms in the composition-gradient region included in the outermost silicon oxynitride layer is 10 to 60%,
a difference between a maximum value and a minimum value of a content rate of nitrogen atoms with respect to the total content of oxygen atoms, nitrogen atoms, and silicon atoms in the composition-gradient region included in the outermost silicon oxynitride layer is 5 to 30%,
the outermost silicon oxynitride layer is a layer formed by subjecting a layer that includes a polysilazane-based compound to a modification treatment,
the at least one inorganic deposited film is formed using only one kind of raw material selected from silicon oxide, aluminum oxide, magnesium oxide, silicon nitride, aluminum nitride, titanium nitride, aluminum, magnesium, and zinc, and
wherein the composition gradient region of the outermost silicon oxynitride layer among the one or more silicon oxynitride layers in the gas barrier unit is an outermost layer of the gas barrier laminate.

2. The gas barrier laminate according to claim 1 , wherein the difference between the maximum value and the minimum value of the content rate of nitrogen atoms with respect to the total content of oxygen atoms, nitrogen atoms, and silicon atoms in the composition-gradient region included in the outermost silicon oxynitride layer is 5 to 20%.

3. The gas barrier laminate according to claim 1 , wherein the outermost silicon oxynitride layer is formed by subjecting the layer that includes the polysilazane-based compound to an ion implantation treatment.

4. The gas barrier laminate according to claim 3 , wherein the ion implantation treatment implants ions of at least one gas selected from a group consisting of hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, and krypton using a plasma ion implantation method.

5. The gas barrier laminate according to claim 1 , wherein the gas barrier unit has a layer configuration (i): inorganic layer/silicon oxynitride layer, a layer configuration (iii): inorganic layer/silicon oxynitride layer/silicon oxynitride layer, or a layer configuration (v): inorganic layer/silicon oxynitride layer/inorganic layer/silicon oxynitride layer.

6. The gas barrier laminate according to claim 1 , wherein the outermost silicon oxynitride layer is situated within the gas barrier unit at a position away from the base.

7. The gas barrier laminate according to claim 1 , wherein the outermost silicon oxynitride layer includes the composition-gradient region at a position away from the base.

8. The gas barrier laminate according to claim 1 , wherein a thickness of the at least one inorganic deposited film is 5 nm or more and 500 nm or less.

9. The gas barrier laminate according to claim 1 , wherein the ratio of the thickness of the composition-gradient region to the thickness of the entire outermost silicon oxynitride layer is 0.4 or less.

10. The gas barrier laminate according to claim 1 , wherein a thickness of the base is 0.5 to 500 μm.

11. The gas barrier laminate according to claim 1 , wherein a material for forming the base is a resin selected from the group consisting of a polyimide, a polyamide, a polyamideimide, a polyphenylene ether, a polyether ketone, a polyether ether ketone, a polyolefin, a polyester, a polycarbonate, a polysulfone, a polyether sulfone, a polyphenylene sulfide, an acrylic-based resin, a cycloolefin-based polymer, and an aromatic polymer.

12. The gas barrier laminate according to claim 1 , wherein a thickness of the outermost silicon oxynitride layer is 50 to 300 nm.

13. An electronic device member comprising the gas barrier laminate according to claim 1 .

14. An electronic device comprising the electronic device member according to claim 13 .

Assignees

• Lintec Corp

Inventors

• Suzuki Yuuta
• Iwaya Wataru
• Nagamoto Koichi
• Kondo Takeshi

Classifications

• B32B27/28

  comprising synthetic resins not wholly covered by any one of the sub-groups {B32B27/30 - B32B27/42} · CPC title

• B32B9/04

  comprising such {particular} substance as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a glass layer B32B17/06; layered products with at least two ceramic layers composed mainly of ceramic B32B18/00)} · CPC title

• B32B2264/10

  Inorganic particles · CPC title

• B32B27/06

  as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08)} · CPC title

• B32B2264/102

  Oxide or hydroxide · CPC title