Poly-silicon manufacturing apparatus and method using high-efficiency hybrid horizontal reactor

Patent metadata

Field	Value
Publication number	US-10322938-B2
Application number	US-201515508370-A
Country	US
Kind code	B2
Filing date	Jul 3, 2015
Priority date	Sep 29, 2014
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

According to the present invention, there is provided a polysilicon production apparatus including: a horizontal reaction tube having an inlet port through which gaseous raw materials including reactant gases and a reducing gas are supplied, an outlet port through which residual gases exit, a reaction surface with which the gaseous raw materials come into contact, and bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged; and first heating means adapted to heat the reaction surface of the horizontal reaction tube. The horizontal reaction tube includes reaction regions consisting of first reaction regions where polysilicon is deposited and second reaction regions where reaction by-products are converted to the reactant gases. The first reaction regions are connected in series with the second reaction regions. Also provided is a polysilicon production method using the polysilicon production apparatus.

First claim

What is claimed is:

1. A polysilicon production apparatus, comprising:
an insulated tube; and
a horizontal reaction tube positioned in the insulated tube, the horizontal reaction tube having:
an inlet port through which gaseous raw materials comprising reactant gases and a reducing gas are supplied to the horizontal reaction tube,
an outlet port through which residual gases exit the horizontal reaction tube,
a reaction surface with which the gaseous raw materials come into contact, and
bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged from the reaction tube; and
a first heater adapted to heat the reaction surface of the horizontal reaction tube,
wherein the horizontal reaction tube comprises reaction regions consisting of first reaction regions where polysilicon is deposited and second reaction regions where reaction by-products are converted to the reactant gases, the first reaction regions being connected in series with the second reaction regions.

2. The polysilicon production apparatus according to claim 1 , wherein the reaction temperature of the first reaction regions is controlled independently from that of the second reaction regions.

3. The polysilicon production apparatus according to claim 1 , further comprising a polysilicon collection container adapted to collect the molten polysilicon discharged through the bottom openings of the horizontal reaction tube.

4. The polysilicon production apparatus according to claim 1 , wherein the reactant gases comprise trichlorosilane (TCS), the reaction by-products comprise one or more of monosilane, monochlorosilane, dichlorosilane, and tetrachlorosilane (STC), and the reducing gas comprises hydrogen.

5. The polysilicon production apparatus according to claim 1 , wherein the bottom openings of the horizontal reaction tube are formed in the first reaction regions.

6. The polysilicon production apparatus according to claim 1 , wherein the first reaction regions and the second reaction regions of the horizontal reaction tube are alternately arranged and the last reaction region is occupied by the first reaction region.

7. The polysilicon production apparatus according to claim 1 , wherein each of the second reaction regions further has an opening through which a reducing gas is supplied.

8. The polysilicon production apparatus according to claim 1 , wherein the second reaction regions comprise a catalyst capable of promoting the conversion of the reaction by-products to the reactant gases.

9. The polysilicon production apparatus according to claim 8 , wherein the catalyst is Si, SiC or a mixture thereof that provides no impurities during polysilicon deposition.

10. The polysilicon production apparatus according to claim 1 , wherein the second reaction regions have internal structures to provide additional reaction surfaces.

11. The polysilicon production apparatus according to claim 3 , wherein the polysilicon collection container comprises a second heater adapted to maintain the collected polysilicon in a molten state.

12. The polysilicon production apparatus according to claim 1 , wherein the reaction surface is either the inner or outer surface of the horizontal reaction tube or both.

13. The polysilicon production apparatus according to claim 3 , wherein the polysilicon is discharged in the form of droplets through the bottom openings of the horizontal reaction tube and is collected in the polysilicon collection container.

14. The polysilicon production apparatus according to claim 3 , wherein the polysilicon collection container is positioned in the insulated tube.

15. A polysilicon production method, comprising:
feeding gaseous raw materials comprising reactant gases and a reducing gas through a gas inlet port into a first reaction region of a horizontal reaction tube, which is positioned in an insulated tube, and the horizontal reaction tube has reaction regions consisting of first reaction regions where polysilicon is deposited and second reaction regions where reaction by-products are converted to the reactant gases, the first reaction regions being connected in series with the second reaction regions;
heating the first reaction regions of the horizontal reaction tube to a reaction temperature of the gaseous raw materials to deposit polysilicon;
converting by-products of the reactions in the first reaction regions to the reactant gases in the second reaction regions and allowing the reactant gases to participate in polysilicon deposition; and
discharging the deposited polysilicon in the form of droplets through bottom openings of the horizontal reaction tube.

16. The polysilicon production method according to claim 15 , further comprising collecting the discharged polysilicon in the form of droplets in a polysilicon collection container.

17. The polysilicon production method according to claim 16 , further comprising heating the polysilicon collection container to maintain the collected polysilicon in a liquid state.

18. The polysilicon production method according to claim 15 , wherein the first reaction regions are heated to a temperature suitable for polysilicon deposition and the second reaction regions are heated to a temperature suitable for the conversion of reaction by-products, the two temperatures being controlled independently from each other.

19. The polysilicon production method according to claim 15 , further comprising:
supplying an additional reducing gas to the second reaction regions for the conversion of the reaction by-products in the absence of a catalyst; or
supplying a catalyst to the second reaction regions for the conversion of the reaction by-products.

20. The polysilicon production method according to claim 15 , wherein:
the reactant gases comprise trichlorosilane;
the reaction by-products comprise one or more of monosilane, monochlorosilane, dichlorosilane, and tetrachlorosilane (STC); and
the reducing gas comprises hydrogen.

Assignees

• Lg Chemical Ltd

Inventors

• Jang Eunsu
• Kim Yoo Seok
• Kim Jeong Kyu
• Yoo Jinhyoung
• Lee Jungwoo

Classifications

• B01J12/005

  carried out at high temperatures, e.g. by pyrolysis · CPC title

• C01B33/03 Primary

  by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent · CPC title

• C01B33/035 Primary

  by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process · CPC title

• B01J12/007

  in the presence of catalytically active bodies, e.g. porous plates · CPC title

• B01J2219/00765

  Baffles attached to the reactor wall · CPC title