Gas cluster reactor for anisotropic film growth
US-2015376791-A1 · Dec 31, 2015 · US
US10319563B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10319563-B2 |
| Application number | US-201816220340-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 14, 2018 |
| Priority date | Jun 8, 2016 |
| Publication date | Jun 11, 2019 |
| Grant date | Jun 11, 2019 |
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The disclosure relates to an electronic beam machining system. The system includes a vacuum chamber; an electron gun located in the vacuum chamber and used to emit electron beam; a holder located in the vacuum chamber and used to fix an object; a control computer; and a diffraction unit located in the vacuum chamber; the diffraction unit includes a two-dimensional nanomaterial; the electron beam transmits the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams; the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots.
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What is claimed is: 1. An electronic beam machining system, comprising: a vacuum chamber; an electron gun located in the vacuum chamber and configured to emit an incident electron beam; a holder located in the vacuum chamber, spaced from the electron gun, and configured to secure an object; a diffraction unit located between the electron gun and the holder, wherein the diffraction unit comprises a two-dimensional nanomaterial comprising a single layer of atoms, the incident electron beam is configured to transmit the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams, and the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots; and a control computer configured to control the electronic beam machining system. 2. The electronic beam machining system of claim 1 , wherein the two-dimensional nanomaterial is a graphene sheet. 3. The electronic beam machining system of claim 1 , wherein the two-dimensional nanomaterial is a MoS 2 sheet. 4. The electronic beam machining system of claim 1 , wherein the diffraction unit further comprises a grid, and the two-dimensional nanomaterial and the grid are stacked with each other. 5. The electronic beam machining system of claim 4 , wherein the grid is a copper mesh. 6. The electronic beam machining system of claim 4 , wherein the grid is a carbon nanotube structure. 7. The electronic beam machining system of claim 6 , wherein the carbon nanotube structure comprises two drawn carbon nanotube films stacked with each other. 8. The electronic beam machining system of claim 7 , wherein aligned directions of carbon nanotubes between the two drawn carbon nanotube films is about 90 degrees. 9. The electronic beam machining system of claim 4 , wherein the diffraction unit further comprises a metal sheet having a central through hole, and the grid is located on the metal sheet and covers the central through hole. 10. The electronic beam machining system of claim 1 , further comprising a conductor shield configured to shield at lease one of the transmission spot and the plurality of diffraction spots. 11. The electronic beam machining system of claim 10 , wherein the conductor shield comprises a first conductive rod having a first end fixed on an inner wall of the vacuum chamber and a second end opposite to the first end, and a first conductive plate fixed on the second end. 12. The electronic beam machining system of claim 11 , wherein the conductor shield further comprises a plurality of second conductive rods connected to the first conductive plate and a plurality of second conductive plates respectively connected to the plurality of second conductive rods. 13. The electronic beam machining system of claim 12 , wherein the plurality of second conductive rods are rotatable around the first conductive plate. 14. The electronic beam machining system of claim 10 , wherein the conductor shield is connected to an external circuit. 15. The electronic beam machining system of claim 14 , wherein both the conductor shield and the two-dimensional nanomaterial are connected to the external circuit. 16. The electronic beam machining system of claim 1 , wherein the diffraction unit is connected to a power supply adapted to accelerate the incident electron beam. 17. The electronic beam machining system of claim 1 , further comprising a plurality of focus electrodes located between the diffraction unit and the holder, and each of the plurality of focus electrodes is located corresponding to one of the plurality of diffraction electron beams. 18. The electronic beam machining system of claim 1 , wherein the control computer is configured to control the electronic beam machining system according to a first formula d sin θ≅dθ=λ and a second formula sin θ=R/(D 2 +R 2 ) 1/2 , where d represents a lattice period of the two-dimensional nanomaterial, λ represents a wavelength of the incident electron beam, θ represents an angle between the transmission electron beam and the plurality of diffraction electron beams, D represents a distance between the two-dimensional nanomaterial and the object, and R represents a radius of a diffraction ring formed by the plurality of diffraction spots.
Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less · CPC title
Processing objects on a macro-scale · CPC title
Controlling the beam · CPC title
for welding · CPC title
Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. · CPC title
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