Metal Gate of Gate-All-Around Transistor
US-2015380539-A1 · Dec 31, 2015 · US
US10319554B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10319554-B2 |
| Application number | US-201515539384-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2015 |
| Priority date | Dec 24, 2014 |
| Publication date | Jun 11, 2019 |
| Grant date | Jun 11, 2019 |
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Example compact modular electron beam units are provided that can be used to generate electron beams using field emitter elements. A modular electron beam unit may comprise an electron beam source including a base portion, at least one field emitter element coupled to the base portion, the field emitter element including a field emitter tip, at least one gate electrode and a membrane window disposed over the at least one gate electrode.
Opening claim text (preview).
What is claimed is: 1. A modular electron beam unit comprising: an electron beam source comprising: a base portion; at least one field emitter element coupled to the base portion, comprising: a first end that is proximate to the base portion; a field emitter tip disposed proximate to a second end that is opposite to the first end; an ungated transistor channel formed between the first and the second end of the at least one emitter element; and at least one gate electr…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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