Composition for forming silica layer, and silica layer

Patent metadata

Field	Value
Publication number	US-10316216-B2
Application number	US-201715478278-A
Country	US
Kind code	B2
Filing date	Apr 4, 2017
Priority date	Aug 31, 2016
Publication date	Jun 11, 2019
Grant date	Jun 11, 2019

Abstract

A composition for forming a silica layer, a silica layer, and an electronic device, the composition including a silicon-containing polymer; and a solvent, wherein a 1 H-NMR spectrum of the silicon-containing polymer satisfies Equations 1 and 2:

B/A =0.2 to 0.4  [Equation 1]

( A+B )/ C= 4.8 to 12.0.  [Equation 2]

First claim

What is claimed is:

1. A composition for forming a silica layer, the composition comprising:
a silicon-containing polymer; and
a solvent,
wherein a 1 H-NMR spectrum of the silicon-containing polymer satisfies Equations 1 and 2:
B/A =0.2 to 0.4  [Equation 1]

( A+B )/ C= 4.8 to 12.0  [Equation 2]

wherein, in Equations 1 and 2,
A is a peak area of greater than or equal to about 4.5 ppm and less than about 5.5 ppm,
B is a peak area of greater than or equal to about 3.8 ppm and less than about 4.5 ppm, and
C is a peak area of greater than or equal to about 0.2 ppm and less than 2.5 ppm:
the 1 H-NMR spectrum being measured according to Condition 1:
[Condition 1]
adding the silicon-containing polymer to a dibutylether (DBE) solvent to prepare a Sample 1 having a solid content of about 15±0.1 wt %,
taking 3 cc of the Sample 1, dispensing the Sample 1 in the center of a silicon wafer having a diameter of 8 inch using a spin coater, and spin-rotating it at 1,500 rpm for 5 minutes to form a film on the silicon wafer,
taking the film with a cutter and mixing the taken film with a CDCl 3 (chloroform-d) solvent to prepare a solution,
preparing a Sample 2 where a content of the taken film is 3.0 wt % based on a total amount of the solution, and
measuring a 1 H-NMR spectrum of the Sample 2 at 300 MHz, and
wherein the silicon-containing polymer has a number average molecular weight of about 500 to about 10,000, and
wherein the silicon-containing polymer is included in an amount of greater than 0.1 wt % to less than or equal to 50 wt %, based on a total weight of the composition for forming a silica layer.

2. The composition for forming a silica layer as claimed in claim 1 , wherein in Equation 2, (A+B)/C ranges from about 5.0 to about 10.5.

3. The composition for forming a silica layer as claimed in claim 2 , wherein in Equation 2, (A+B)/C ranges from about 5.2 to about 9.0.

4. The composition for forming a silica layer as claimed in claim 1 , wherein the silicon-containing polymer includes a polysilazane, a polysiloxazane, or a combination thereof.

5. The composition for forming a silica layer as claimed in claim 1 , wherein the silicon-containing polymer has a weight average molecular weight of about 1,000 to about 100,000.

6. The composition for forming a silica layer as claimed in claim 1 , wherein the solvent includes benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydro naphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, ethylcyclohexane, methylcyclohexane, p-menthane, dipropylether, dibutylether, anisole, butyl acetate, amyl acetate, methylisobutylketone, or a combination thereof.

7. The composition for forming a silica layer as claimed in claim 1 , wherein the silicon-containing polymer is included in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the composition for forming a silica layer.

8. A silica layer manufactured from the composition for forming a silica layer as claimed in claim 1 .

9. An electronic device comprising the silica layer as claimed in claim 8 .

10. The composition for forming a silica layer as claimed in claim 1 , wherein in Equation 2, (A+B)/C ranges from 4.8 to about 9.0.

11. The composition for forming a silica layer as claimed in claim 1 , wherein the silicon-containing polymer has a weight average molecular weight of about 1,000 to about 11,200.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Lee Jiho
• Sim Sooyeon
• Kim Jingyo
• Joo Youngjae

Classifications

• H10W74/476

  Organic materials comprising silicon · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• C09D183/16 Primary

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C01B33/12

  Silica; Hydrates thereof, e.g. lepidoic silicic acid · CPC title

• B05D1/00

  Processes for applying liquids or other fluent materials (B05D5/00, B05D7/00 take precedence) · CPC title