Simple approach for preparing post-treatment-free solution processed non-stoichiometric niox nanoparticles as conductive hole transport materials

US10315929B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10315929-B2
Application numberUS-201514883131-A
CountryUS
Kind codeB2
Filing dateOct 14, 2015
Priority dateOct 14, 2015
Publication dateJun 11, 2019
Grant dateJun 11, 2019

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Abstract

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High-quality non-stoichiometric NiO x nanoparticles are synthesized by a facile chemical precipitation method. The NiO x film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiO x HTL. Better performance in NiO x based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiO x semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.

First claim

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What is claimed is: 1. A method for preparing non-stoichiometric NiO x nanoparticles, with a composition of NiO (Ni 2+ ), NiOOH (Ni 3+ ), and Ni 2 O 3 (Ni 3+ ), wherein the method comprises: using a base to react with Ni ions in water without added heat to form an electrically insulated and undispersed intermediate; grinding the intermediate to form it into a uniform grain size; combusting the intermediate in air at a temperature of 270° C. to cause oxygen to interact with a nickel-deficient lattice and further form non-stoichiometric NiO x nanoparticles. 2. The method of claim 1 , wherein the NiO x nanoparticles have dark-black color or atrous color. 3. The method of claim 1 , wherein the NiO x nanoparticles comprise vacancy-induced Ni 2+ and Ni 3+ composition. 4. The method of claim 1 , wherein the non-stoichiometric NiO x nanoparticles contain nickel oxyhydroxide (NiOOH) which have a plurality of hydroxyl groups. 5. The method of claim 1 , wherein the step of using a base to form undispersed intermediate involves use of a dispersing agent that is water/methanol, water/ethanol, or water/other alcoholic solvents. 6. The method of claim 1 wherein the step of combusting occurs for at least 2 hours. 7. The method of claim 1 wherein nanoparticle size is about 3-5 nm.

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What does patent US10315929B2 cover?
High-quality non-stoichiometric NiO x nanoparticles are synthesized by a facile chemical precipitation method. The NiO x film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in orga…
Who is the assignee on this patent?
Univ Hong Kong
What technology area does this patent fall under?
Primary CPC classification C01G53/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 11 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).