High-side semiconductor-switch low-power driving circuit and method
US-9007100-B2 · Apr 14, 2015 · US
US10312913B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10312913-B2 |
| Application number | US-201715722449-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 2, 2017 |
| Priority date | Oct 17, 2016 |
| Publication date | Jun 4, 2019 |
| Grant date | Jun 4, 2019 |
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The present disclosure provides a level shifter including: a level shifter section that is driven by a first power source voltage, and that, in accordance with switching of an input signal of a voltage lower than the first power source voltage, switches an output signal that has been level-shifted, from the first power source voltage to a voltage lower than the first power source voltage; and a threshold voltage changing circuit that, in accordance with a switching direction of the input signal, changes a threshold voltage of the input signal for switching the output signal.
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What is claimed is: 1. A level shifter comprising: a level shifter section that is driven by a first power source voltage, and that, in accordance with switching of an input signal of a voltage lower than the first power source voltage, switches an output signal that has been level-shifted, from the first power source voltage to a voltage lower than the first power source voltage; and a threshold voltage changing circuit that, in accordance with a switching direction of the input signal, changes a threshold voltage of the input signal for switching the output signal, wherein the level shifter section includes a differential amplifier circuit and a current mirror circuit, and wherein the threshold voltage changing circuit includes: a constant current source having an input connected to the first power source voltage; a first transistor having a first electrical conductivity type and having a first main electrode connected to an output of the constant current source, a second main electrode connected to a second power source voltage having a voltage lower than the first power source voltage, and a first control electrode connected to a node between an output terminal where the output signal is output and the differential amplifier circuit; and a second transistor having a second electrical conductivity type opposite to that of the first electrical conductivity type and having a third main electrode connected to the differential amplifier circuit, a fourth main electrode connected to the differential amplifier circuit and the output terminal, and a second control electrode connected to a node between the output of the constant current source and the first main electrode. 2. The level shifter of claim 1 , wherein the threshold voltage changing circuit is a hysteresis circuit exhibiting hysteresis characteristics with respect to changes in a voltage of the output signal in response to changes in the voltage of the input signal. 3. The level shifter of claim 1 , wherein the differential amplifier circuit includes: a third transistor having a fifth main electrode connected to the first power source voltage, a sixth main electrode connected to the second power source voltage, and a third control electrode connected via a resistor to an input terminal to which the input signal is input, a fourth transistor having a seventh main electrode connected to the first power source voltage and an eighth main electrode connected to a fourth control electrode of the fourth transistor and to the output terminal, and a fifth transistor having the first electrical conductivity type and having a ninth main electrode connected to the eighth main electrode and the output terminal and a tenth main electrode connected to the second power source voltage; and the current mirror circuit includes: the fifth transistor, and a sixth transistor having the first electrical conductivity type and having an eleventh main electrode connected to the first power source voltage, a twelfth main electrode connected to the second power source voltage, and a sixth control electrode connected to a fifth control electrode of the fifth transistor. 4. The level shifter of claim 1 , wherein: the constant current source and the second transistor are configured by an offset transistor, and the first transistor is configured by a vertical diffused transistor. 5. The level shifter of claim 1 , further comprising a clamp section that limits the amplitude of the output signal.
with at least one differential stage · CPC title
in bipolar transistor circuits · CPC title
using a combination of bipolar and field effect transistors [BIFET] · CPC title
with an adaptive threshold · CPC title
Threshold logic · CPC title
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