Flexible OLED display panel having a substrate with a titanium layer and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10312461-B2
Application number	US-201715735609-A
Country	US
Kind code	B2
Filing date	Nov 22, 2017
Priority date	Oct 30, 2017
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

The present disclosure provides a flexible organic light-emitting diode (OLED) display panel including a flexible substrate and a plurality of thin film transistor (TFT) devices disposed on the flexible substrate. The flexible substrate comprises: a first polyimide (PI) layer; a first inorganic barrier layer disposed on a surface of the first PI layer; a titanium metal layer disposed on a surface of the first inorganic barrier layer; a second PI layer disposed on a surface of the titanium metal layer; and a second inorganic barrier layer disposed on a surface of the second PI layer. The TFT devices are disposed on a surface of the second inorganic barrier layer.

First claim

What is claimed is:

1. A flexible organic light-emitting diode (OLED) display panel including a flexible substrate and a plurality of thin film transistor (TFT) devices disposed on the flexible substrate, the flexible substrate comprising:
a first polyimide (PI) layer;
a first inorganic barrier layer disposed on a surface of the first PI layer;
a titanium metal layer disposed on a surface of the first inorganic barrier layer, wherein the titanium metal layer is patterned to form a pattern of the titanium metal layer;
a second PI layer directly disposed on a surface of the titanium metal layer; and
a second inorganic barrier layer disposed on a surface of the second PI layer;
wherein the TFT devices are disposed on a surface of the second inorganic barrier layer;
wherein the TFT devices include at least an active layer, a projection of the pattern of the titanium metal layer on the second inorganic barrier layer corresponds to a pattern of the active layer, and the pattern of the titanium metal layer is positioned opposite to the active layer.

2. The flexible OLED display panel according to claim 1 , wherein the first inorganic barrier layer and the second inorganic barrier layer are made of TiO 2 .

3. The flexible OLED display panel according to claim 1 , wherein a thickness of the first PI layer and a thickness of the second PI layer are same, a thickness of the first inorganic barrier layer and a thickness of the second inorganic barrier layer are same, and the thickness of the first inorganic barrier layer and the thickness of the second inorganic barrier layer are one third of the thickness of the first PI layer and the thickness of the second PI layer.

4. The flexible OLED display panel according to claim 3 , wherein a thickness of the titanium metal layer, the thickness of the first inorganic barrier layer, and the thickness of the second inorganic barrier layer are same.

5. A flexible organic light-emitting diode (OLED) display panel including a flexible substrate and a plurality of thin film transistor (TFT) devices disposed on the flexible substrate, the flexible substrate comprising:
a first polyimide (PI) layer;
a first inorganic barrier layer disposed on a surface of the first PI layer;
a titanium metal layer disposed on a surface of the first inorganic barrier layer, wherein the titanium metal layer is patterned;
a second PI layer directly disposed on a surface of the titanium metal layer; and
a second inorganic barrier layer disposed on a surface of the second PI layer;
wherein the TFT devices are disposed on a surface of the second inorganic barrier layer.

6. The flexible OLED display panel according to claim 5 , wherein the first inorganic barrier layer and the second inorganic barrier layer are made of TiO 2 .

7. The flexible OLED display panel according to claim 5 , wherein a thickness of the first PI layer and a thickness of the second PI layer are same, a thickness of the first inorganic barrier layer and a thickness of the second inorganic barrier layer are same, and the thickness of the first inorganic barrier layer and the thickness of the second inorganic barrier layer are one third of the thickness of the first PI layer and the thickness of the second PI layer.

8. The flexible OILED display panel according to claim 7 , wherein a thickness of the titanium metal layer, the thickness of the first inorganic barrier layer, and the thickness of the second inorganic barrier layer are same.

9. A method for manufacturing a flexible organic light-emitting diode (OLED) display panel, comprising:
a step S 10 of providing a glass base plate;
a step S 20 of forming a first polyimide (PI) layer on the glass base plate;
a step S 30 of forming a first inorganic barrier layer on the surface of the first PI layer;
a step S 40 of forming a titanium metal layer on a surface of the first inorganic barrier layer;
a step S 50 of forming a second PI layer directly on a surface of the titanium metal layer;
a step S 60 of forming a second inorganic barrier layer on a surface on the second PI layer; and
a step S 70 of forming a plurality of thin film transistor (TFT) devices on a surface of the second inorganic barrier layer;
wherein the step S 40 further comprises:
a step S 401 of patterning the titanium metal layer to form a pattern on the titanium metal layer.

10. The method for manufacturing the flexible OLED display panel according to claim 9 , wherein the step S 70 comprises:
a step S 701 of correspondingly forming the TFT devices directly above and opposite to the pattern of the titanium-metal layer.

11. The method for manufacturing the flexible OLED display panel according to claim 9 , wherein the method further comprises:
a step S 80 of using a laser to separate the first PI layer from the glass base plate.

Assignees

• Wuhan China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Qin Fang

Classifications

• H01L51/003

  Electricity · mapped topic

• H01L27/3272

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• H01L2227/326

  Electricity · mapped topic

• H01L51/0097 Primary

  Electricity · mapped topic