Organic semiconductor element, manufacturing method thereof, compound, organic semiconductor composition, organic semiconductor film, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10312447-B2
Application number	US-201715696194-A
Country	US
Kind code	B2
Filing date	Sep 6, 2017
Priority date	Mar 16, 2015
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.
The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater.

D-A   (1)

First claim

What is claimed is:

1. An organic semiconductor element comprising:
an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater,
D-A   (1)

in Formula 1, A represents an electron acceptor unit including a partial structure having at least one of a sp2 nitrogen atom, a carbonyl group, or a thiocarbonyl group in a ring structure, D represents an electron donor unit including a divalent aromatic heterocyclic group having at least one of an N atom, an O atom, an S atom, or an Se atom in a ring structure, or a divalent aromatic hydrocarbon group consisting of a fused ring structure having two or more rings as a partial structure, and at least one of D or A has at least one monovalent group represented by Formula 1-1,
*-L-O—R  (1-1)

in Formula 1-1, L represents a linear or branched alkylene group having m carbon atoms, R represents an alkyl group not having a substituent and having n carbon atoms, 6≤m+n≤50, and * represents a bonding site to another structure,
wherein, in Formula 1, A has at least one structure selected from the group consisting of structures represented by Formulae A-1 to A-7 and A-9 to A-12, as a partial structure,

wherein in Formulae A-1 to A-7 and A-9 to A-12, each X independently represents an O atom, a S atom, a Se atom or NR A1 , each Y independently represents an O atom or a S atom, each Z a independently represents CR A2 or a N atom, each W independently represents C(R A2 ) 2 , NR A1 , a N atom, CR A2 , an O atom, a S atom, or a Se atom, each R A1 independently represents an alkyl group, a monovalent group represented by Formula 1-1, or a bonding site to another structure, s each R A2 independently represents a hydrogen atom, a halogen atom, an alkyl group, or a bonding site to another structure, and each * independently represents a bonding site to another structure.

2. The organic semiconductor element according to claim 1 ,
wherein, in Formula 1, D represents a structure represented by Formula D-1,

in Formula D-1, each X″ independently represents an O atom, a S atom, a Se atom, or NR D1 , each Z d independently represents a N atom or CR D2 , each R D1 independently represents a monovalent organic group, each R D2 independently represents a hydrogen atom or a monovalent organic group, M represents a single bond, a divalent aromatic heterocyclic group, a divalent aromatic hydrocarbon group, an alkenylene group, an alkynylene group, or a divalent group obtained by combining these, p and q each independently represent an integer of 0 to 4, and each * independently represents a bonding site to another structure.

3. The organic semiconductor element according to claim 1 ,
wherein a constitutional repeating unit represented by Formula 1 is a constitutional repeating unit represented by any one of Formulae 2 to 4,

in Formulae 2 to 4, each X independently represents an O atom, a S atom, a Se atom or NR A1 , each Y independently represents an O atom or a S atom, each Z a independently represents CR A2 or a N atom, each R A1 independently represents an alkyl group, a monovalent group represented by Formula 1-1, or a bonding site to another structure, each R A2 independently represents a hydrogen atom, a halogen atom, an alkyl group, or a bonding site to another structure, each X′ independently represents an O atom, a S atom, a Se atom, or NR D1 , each Z d independently represents a N atom or CR D2 , each R D1 independently represents a monovalent organic group, each R D2 independently represents a hydrogen atom or a monovalent organic group, M represents a single bond, a divalent aromatic heterocyclic group, a divalent aromatic hydrocarbon group, an alkenylene group, an alkynylene group, or a divalent group obtained by combining these, and p and q each independently represent an integer of 0 to 4.

4. The organic semiconductor element according to claim 1 ,
wherein the organic semiconductor layer further contains an insulating polymer including a constitutional unit represented by Formula I-1,

in Formula I-1, R 22 to R 26 each independently represent a hydrogen atom, a hydroxy group, an alkyl group, an alkoxy group, an alkenyl group, an alkynyl group, an aryl group, an aralkyl group, or a halogen atom or may form a ring by linking two of R 22 to R 26 that are adjacent to each other, and R 21 represents a hydrogen atom or an alkyl group.

5. The organic semiconductor element according to claim 4 , further comprising:
a gate insulating film having a surface energy of 50 to 75 mNm −1 .

6. The organic semiconductor element according to claim 1 , which is an organic thin film transistor.

7. A compound comprising:
a constitutional repeating unit represented by Formula 1,
wherein a molecular weight is 2,000 or greater,
D-A   (1)

in Formula 1, A represents an electron acceptor unit having at least one structure selected from the group consisting of structures represented by Formulae A-1 to A-12, as a partial structure, D represents an electron donor unit including a divalent aromatic heterocyclic group having at least one of a N atom, an O atom, a S atom, or a Se atom in a ring structure or a divalent aromatic hydrocarbon group consisting of a fused ring structure having two or more rings, as a partial structure, and at least one of D or A has at least one monovalent group represented by Formula 1-1,

in Formulae A-1 to A-7 and A-9 to A-12, each X independently represents an O atom, a S atom, a Se atom, or NR A1 , each Y independently represents an O atom or a S atom, each Z a independently represents CR A2 or a N atom, each W independently represents C(R A2 ) 2 , NR A1 , a N atom, CR A2 , an O atom, a S atom, or a Se atom, each R A1 independently represents an alkyl group, a monovalent group represented by Formula 1-1, or a bonding site to another structure, R A2 's each independently represent a hydrogen atom, a halogen atom, an alkyl group, or a bonding site to another structure, and each * independently represents a bonding site to another structure,
*-L-O—R  (1-1)

in Formula 1-1, L is a linear or branched alkylene group having m carbon atoms, R is an alkyl group not having a substituent and having n carbon atoms, 6≤m+n≤50, and * represents a bonding site to another structure.

8. The compound according to claim 7 ,
wherein, in Formula 1, D is a structure represented by Formula D-1,

in Formula D-1, each X′ independently represents an O atom, a S atom, a Se atom, or NR D1 , each Z d independently represents a N atom or CR D2 , each R D1 independently represents a monovalent organic group, each R D2 independently represents a hydrogen atom or a monovalent organic group, M represents a single bond, a divalent aromatic heterocyclic group, a divalent aromatic hydrocarbon group, an alkenylene group, an alkynylene group, or a divalent group obtained by combining t

Assignees

• Fujifilm Corp

Inventors

• Kitamura Tetsu
• Yamamoto Yosuke
• TAMAKUNI Fumiko
• Shigenoi Yuta
• Goto Takashi
• Watanabe Tetsuya

Classifications

• C08G2261/3245

  containing nitrogen and oxygen as heteroatoms · CPC title

• C08G2261/512

  Hole transport · CPC title

• C08G2261/414

  Stille reactions · CPC title

• C08G2261/3223

  containing one or more sulfur atoms as the only heteroatom, e.g. thiophene · CPC title

• C08G2261/1424

  containing ether groups, including alkoxy · CPC title