Oscillator device and method of mounting oscillator device
US-9209781-B2 · Dec 8, 2015 · US
US10312430B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10312430-B2 |
| Application number | US-201615059318-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 3, 2016 |
| Priority date | Nov 9, 2015 |
| Publication date | Jun 4, 2019 |
| Grant date | Jun 4, 2019 |
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A method of manufacturing a piezoelectric element includes: forming a patterned mask layer over a substrate, in which the patterned mask layer has an opening exposing a portion of the substrate; forming a piezoelectric element in the opening; and removing the patterned mask layer to obtain the piezoelectric element, in which the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a piezoelectric element, comprising: providing a substrate; forming a patterned mask layer through a cut or punch process, wherein the patterned mask layer has an opening; adhering the patterned mask layer to the substrate, wherein the opening exposes a portion of the substrate; forming a piezoelectric element on the portion of the substrate; and removing the patterned mask layer to obtain the piezoelectric element, wherein the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion, and an included angle between a sidewall of the peripheral portion and a surface of the substrate is in a range of 40° to 100°. 2. The method of claim 1 , wherein forming the piezoelectric element on the portion of the substrate comprises: filling a piezoelectric material solution in the opening; and solidifying the piezoelectric material solution to form the piezoelectric element. 3. The method of claim 2 , wherein the piezoelectric material solution has a height less than a depth of the opening. 4. The method of claim 1 , wherein the patterned mask layer comprises a plastic material layer and an adhesive layer between the plastic material layer and the substrate. 5. The method of claim 1 , wherein the patterned mask layer comprises polyethylene terephthalate, polyimide, polycarbonate (PC), polyethylene (PE), polymethyl methacrylate (PMMA), metal, alloy, or silicon.
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