Method of manufacturing piezoelectric element and piezoelectric substrate

US10312430B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10312430-B2
Application numberUS-201615059318-A
CountryUS
Kind codeB2
Filing dateMar 3, 2016
Priority dateNov 9, 2015
Publication dateJun 4, 2019
Grant dateJun 4, 2019

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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A method of manufacturing a piezoelectric element includes: forming a patterned mask layer over a substrate, in which the patterned mask layer has an opening exposing a portion of the substrate; forming a piezoelectric element in the opening; and removing the patterned mask layer to obtain the piezoelectric element, in which the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a piezoelectric element, comprising: providing a substrate; forming a patterned mask layer through a cut or punch process, wherein the patterned mask layer has an opening; adhering the patterned mask layer to the substrate, wherein the opening exposes a portion of the substrate; forming a piezoelectric element on the portion of the substrate; and removing the patterned mask layer to obtain the piezoelectric element, wherein the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion, and an included angle between a sidewall of the peripheral portion and a surface of the substrate is in a range of 40° to 100°. 2. The method of claim 1 , wherein forming the piezoelectric element on the portion of the substrate comprises: filling a piezoelectric material solution in the opening; and solidifying the piezoelectric material solution to form the piezoelectric element. 3. The method of claim 2 , wherein the piezoelectric material solution has a height less than a depth of the opening. 4. The method of claim 1 , wherein the patterned mask layer comprises a plastic material layer and an adhesive layer between the plastic material layer and the substrate. 5. The method of claim 1 , wherein the patterned mask layer comprises polyethylene terephthalate, polyimide, polycarbonate (PC), polyethylene (PE), polymethyl methacrylate (PMMA), metal, alloy, or silicon.

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What does patent US10312430B2 cover?
A method of manufacturing a piezoelectric element includes: forming a patterned mask layer over a substrate, in which the patterned mask layer has an opening exposing a portion of the substrate; forming a piezoelectric element in the opening; and removing the patterned mask layer to obtain the piezoelectric element, in which the piezoelectric element has a central portion and a peripheral porti…
Who is the assignee on this patent?
Interface Optoelectronics Shenzhen Co Ltd, General Interface Solution Ltd
What technology area does this patent fall under?
Primary CPC classification H01L41/25. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 04 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).