Piezoelectric device

US10312427B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10312427-B2
Application numberUS-201615173810-A
CountryUS
Kind codeB2
Filing dateJun 6, 2016
Priority dateDec 6, 2013
Publication dateJun 4, 2019
Grant dateJun 4, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A piezoelectric device that includes: a diaphragm; a supporting part configured to support at least a portion of an end of the diaphragm; a piezoelectric film disposed along a portion supported by the supporting part on the diaphragm, a width of the film along the supported portion being narrower than a width of the portion; a lower electrode disposed at a face of the piezoelectric film on a diaphragm side; and an upper electrode disposed on a face of the piezoelectric film on an opposite side to the diaphragm.

First claim

Opening claim text (preview).

We claim: 1. A piezoelectric device comprising: a diaphragm having a first surface and a second surface; a supporting part adjacent the second surface of the diaphragm and configured to support at least a portion of at least one end of opposing ends of the diaphragm; a piezoelectric film adjacent the first surface of the diaphragm and disposed along the portion of the at least one end of the diaphragm supported by the supporting part, wherein the piezoelectric film comprises a width that opposes the supported portion and is narrower than a width of the supported portion; and an electrode disposed on a surface of the piezoelectric film opposite to the diaphragm, wherein the piezoelectric film extends from the at least one end of the diaphragm towards the other end of the opposing ends of the diaphragm and does not extend to a center portion of the diaphragm between the opposing ends of the diaphragm. 2. The piezoelectric device according to claim 1 , wherein the diaphragm is formed of a degenerate semiconductor. 3. The piezoelectric device according to claim 2 , wherein the electrode is an upper electrode and the diaphragm is configured to function as a lower electrode for the piezoelectric film. 4. The piezoelectric device according to claim 1 , wherein the electrode is an upper electrode and the piezoelectric device includes a lower electrode disposed on a surface of the diaphragm. 5. The piezoelectric device according to claim 1 , wherein the diaphragm has a substantially rectangular shape. 6. The piezoelectric device according to claim 5 , wherein the supporting part is configured to support a pair of opposing sides of the diaphragm, wherein the opposing sides correspond to the opposing ends of the diaphragm. 7. The piezoelectric device according to claim 6 , further comprising a plurality of piezoelectric films disposed along each side of the pair of sides of the diaphragm. 8. The piezoelectric device according to claim 7 , wherein the diaphragm is divided along a first substantial center line substantially parallel to the pair of opposing sides. 9. The piezoelectric device according to claim 8 , wherein the diaphragm is further divided along a second substantial center line substantially perpendicular to the pair of opposing sides. 10. A piezoelectric device comprising: a diaphragm having rectangular shape with first and second surfaces that oppose each other; a supporting part configured to support opposing sides of the diaphragm, the support being adjacent the second surface of the diaphragm; a plurality of piezoelectric films disposed adjacent the first surface of the diaphragm and along each side of the diaphragm, wherein at least a pair of the plurality of piezoelectric films are disposed along each side of the diaphragm with each piezoelectric film having a width that opposes the supported portion and the is narrower than a width of the supported portion; and a plurality of electrodes disposed on a surface of each of the piezoelectric films, respectively, opposite to the diaphragm, wherein each of the plurality of piezoelectric film extends towards an opposing side of the diaphragm and does not extend to a center portion of the diaphragm between the opposing sides, respectively of the diaphragm. 11. The piezoelectric device according to claim 1 , wherein the diaphragm is thinner at a center region thereof than a region thereof where the piezoelectric film is disposed. 12. The piezoelectric device according to claim 1 , wherein the piezoelectric film has a compressive stress, and the upper electrode has a tensile stress. 13. The piezoelectric device according to claim 1 , wherein the supporting part includes a supporting part and an insulating layer. 14. The piezoelectric device according to claim 13 , wherein the insulating layer is adjacent the diaphragm. 15. The piezoelectric device according to claim 14 , wherein the insulating layer is silicon oxide. 16. The piezoelectric device according to claim 1 , further comprising a plurality of piezoelectric films adjacent to the first surface of the diaphragm, the plurality of piezoelectric films being electrically coupled in parallel to each other. 17. The piezoelectric device according to claim 1 , further comprising a plurality of piezoelectric films adjacent to the first surface of the diaphragm, wherein a first portion of the plurality of piezoelectric films are electrically coupled in parallel to each other and a second portion of the plurality of piezoelectric films are electrically coupled in parallel to each other, and wherein the first and second portions of the plurality of piezoelectric films are electrically coupled in series to each other. 18. The piezoelectric device according to claim 1 , further comprising a plurality of piezoelectric films adjacent to the first surface of the diaphragm, wherein a first portion of the plurality of piezoelectric films are electrically coupled in series to each other and a second portion of the plurality of piezoelectric films are electrically coupled in series to each other, and wherein the first and second portions of the plurality of piezoelectric films are electrically coupled in parallel to each other. 19. The piezoelectric device according to claim 1 , wherein the diaphragm has a substantially circular shape.

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What does patent US10312427B2 cover?
A piezoelectric device that includes: a diaphragm; a supporting part configured to support at least a portion of an end of the diaphragm; a piezoelectric film disposed along a portion supported by the supporting part on the diaphragm, a width of the film along the supported portion being narrower than a width of the portion; a lower electrode disposed at a face of the piezoelectric film on a di…
Who is the assignee on this patent?
Murata Manufacturing Co
What technology area does this patent fall under?
Primary CPC classification H04R17/025. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 04 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).