Radiation-emitting semiconductor device

Patent metadata

Field	Value
Publication number	US-10312416-B2
Application number	US-201615090028-A
Country	US
Kind code	B2
Filing date	Apr 4, 2016
Priority date	Mar 24, 2010
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

A radiation-emitting semiconductor device includes a housing body having a chip mounting area, a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which the chip connection region is not covered by the radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations, the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged, the chip mounting area is a surface of the housing body which abuts the cavity, and the chip mounting area is free of the light-absorbing material in selected locations remote from the chip connection region.

First claim

The invention claimed is:

1. A radiation-emitting semiconductor device comprising:
a housing body having a chip mounting area;
a chip connection region;
a radiation-emitting semiconductor chip; and
a light-absorbing material, wherein
the radiation-emitting semiconductor chip is fixed to the chip connection region,
the chip connection region is covered with the light-absorbing material at first selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,
the radiation-emitting semiconductor chip is free of the light-absorbing material in second selected locations,
the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged,
the chip mounting area is a surface of the housing body which abuts the cavity, and
the chip mounting area is free of the light-absorbing material at third selected locations remote from the chip connection region.

2. The device according to claim 1 , wherein a wire connection region is arranged at the chip mounting area.

3. The device according to claim 1 , wherein the chip mounting area is formed with the same color as, or in a similar color to, the light absorbing material.

4. The device according to claim 1 , further comprising a light-transmissive potting material, wherein the potting material is substantially free of the light-absorbing material, and the potting material adjoins the radiation-emitting semiconductor chip and the light-absorbing material in the second selected locations.

5. The device according to claim 4 , wherein the potting material abuts the chip mounting area in the second selected locations.

6. The device according to claim 4 , wherein the potting material is transparent.

7. The device according to claim 4 , wherein the potting material is filled with a phosphor and/or a diffuser.

8. The device according to claim 1 , wherein the housing body and the light-absorbing material are the same color.

9. The device according to claim 2 , wherein the chip connection region and the wire connection region are formed with a metal.

10. The device according to claim 9 , wherein the light-absorbing material inhibits migration and/or oxidation and/or corrosion of the metal.

11. The device according to claim 1 , wherein the light-absorbing material comprises a silicone into which light-absorbing particles are introduced.

12. A display apparatus comprising at least one pixel formed at least partly by the device according to claim 1 .

13. A method of producing the device according to claim 1 comprising applying the light-absorbing material by a jet process.

14. A radiation-emitting semiconductor device comprising:
a housing body having a chip mounting area;
a wire connection region arranged at the chip mounting area;
a wire electrically conductively connecting the wire connection region to the radiation-emitting semiconductor chip;
a chip connection region;
a radiation-emitting semiconductor chip; and
a light-absorbing material, wherein
the radiation-emitting semiconductor chip is fixed to the chip connection region,
the wire connection region is covered with the light-absorbing material at the first selected locations at which it is not covered by the wire,
the chip connection region is covered with the light-absorbing material at first selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,
the radiation-emitting semiconductor chip is free of the light-absorbing material in second selected locations,
the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged,
the chip mounting area is a surface of the housing body which abuts the cavity, and
the chip mounting area is free of the light-absorbing material at third selected locations remote from the chip connection region.

15. The device according to claim 1 , wherein at least 50% of the chip mounting area is free of the light-absorbing material.

16. The device according to claim 1 , wherein the light-absorbing material reflects or reemits at most 25% of light that impinges on an outer area of the light-absorbing material.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Wittmann Michael

Classifications

• H10W72/5366

  the bond wires having kinks · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H01L2933/005

  Electricity · mapped topic

• H01L2224/48097

  Electricity · mapped topic

• H01L2933/0066

  Electricity · mapped topic