Solar cell and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10312386-B2
Application number	US-201715416673-A
Country	US
Kind code	B2
Filing date	Jan 26, 2017
Priority date	Jan 28, 2016
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode connected to the first semiconductor region, and a second electrode connected to the back surface of the semiconductor substrate. The second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.

First claim

What is claimed is:

1. A solar cell comprising:
a semiconductor substrate;
a first semiconductor region positioned on a back surface of the semiconductor substrate and doped with impurities of a first conductive type;
a second semiconductor region positioned on the back surface of the semiconductor substrate and doped with impurities of a second conductive type;
a back passivation layer on the back surface of the semiconductor substrate, at least a portion of the back passivation layer overlapping with the first and second semiconductor regions;
a first electrode connected to the first semiconductor region; and
a second electrode connected to the second semiconductor region,
wherein the second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and a back surface of the second semiconductor region.

2. The solar cell of claim 1 , wherein the second electrode formed of the metal foil includes:
a contact portion contacting the back surface of the second semiconductor region; and
a non-contact portion that is spaced apart from the back surface of the second semiconductor region to form the air gap between the second electrode and the back surface of the second semiconductor region.

3. The solar cell of claim 2 , wherein the contact portion of the second electrode formed of the metal foil is in point contact or line contact with the back surface of the second semiconductor region.

4. The solar cell of claim 2 , wherein a thickness of the non-contact portion of the second electrode formed of the metal foil is 20 μm to 30 μm.

5. The solar cell of claim 2 , wherein the contact portion of the second electrode formed of the metal foil is further recessed toward the semiconductor substrate than the non-contact portion.

6. The solar cell of claim 1 , wherein the second electrode formed of the metal foil is made of at least one of Ag, Al, Au, W, Mo, Ni, Pt, Cu, Ti, Cr, and Fe, or an alloy thereof.

7. The solar cell of claim 1 ,
wherein the first electrode is formed of a metal foil covering the first semiconductor region, and
wherein an air gap is formed between the first electrode formed of the metal foil and the first semiconductor region.

8. The solar cell of claim 7 , wherein the first electrode formed of the metal foil includes a first contact portion contacting a back surface of the first semiconductor region and a first non-contact portion that is spaced apart from the first semiconductor region to form the air gap between the first electrode and the first semiconductor region, and
wherein the second electrode formed of the metal foil includes a second contact portion contacting a back surface of the second semiconductor region and a second non-contact portion that is spaced apart from the second semiconductor region to form the air gap between the second electrode and the second semiconductor region.

9. The solar cell of claim 8 , wherein the first contact portion is in point contact or line contact with the back surface of the first semiconductor region, and
wherein the second contact portion is in point contact or line contact with the back surface of the second semiconductor region.

10. The solar cell of claim 8 , wherein a thickness of each of the first and second contact portions is 20 μm to 30 μm.

11. The solar cell of claim 8 , wherein the first and second contact portions are further recessed toward the semiconductor substrate than the first and second non-contact portions, respectively.

12. The solar cell of claim 7 , wherein the first and second electrodes formed of the metal foil are made of at least one of Ag, Al, Au, W, Mo, Ni, Pt, Cu, Ti, Cr, and Fe, or an alloy thereof.

13. The solar cell of claim 1 , wherein the first and second electrodes are physically disconnected from each other on the back passivation layer.

14. The solar cell of claim 1 , wherein the first electrode is in direct physical contact with a back surface of the first semiconductor region, and the second electrode is in direct physical contact with the back surface of the second semiconductor region.

15. The solar cell of claim 1 , wherein a thickness of the air gap is equal to a thickness of the back passivation layer.

16. The solar cell of claim 1 , further comprising an intrinsic semiconductor region between the first and second semiconductor regions, and the back passivation layer is positioned on the intrinsic semiconductor region.

17. The solar cell of claim 1 , wherein the air gap contacts the back surface of the second semiconductor region.

Assignees

• Lg Electronics Inc

Inventors

• Ji Kwangsun
• Ahn Sehwon

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• Y02E10/52

  PV systems with concentrators · CPC title

• H01L31/022433

  Electricity · mapped topic

• H01L31/035281

  Electricity · mapped topic

• H01L31/022441 Primary

  Electricity · mapped topic