Organic light-emitting diode, display panel and display device

Patent metadata

Field	Value
Publication number	US-10312293-B2
Application number	US-201815890985-A
Country	US
Kind code	B2
Filing date	Feb 7, 2018
Priority date	Jul 28, 2017
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

The application discloses an organic light-emitting diode for a display panel. The organic light-emitting diode includes an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, wherein the charge generation layer includes a first layer unit and a second layer unit which are arranged in sequence, the first layer unit includes a hole injection material and a P-type semiconductor material doped in the hole injection material, and the second layer unit includes an electron transport material and ytterbium doped in the electron transport material, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%.

First claim

What is claimed is:

1. An organic light-emitting diode, comprising an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between the at least two adjacent emitting layers;
wherein the charge generation layer comprises a first layer unit and a second layer unit, arranged in sequence between the at least two emitting layers, wherein the first layer unit comprises a hole injection material doped with a P-type semiconductor material, and wherein the second layer unit comprises an electron transport material doped with ytterbium, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%;
wherein the P-type semiconductor material comprises the following compound:

wherein n is an integer greater than or equal to 1, and X 1 , X 2 and X 3 each respectively has an independent structure of

 R′ is selected from any one of substituted aryl and substituted hetero aryl, and the substituent in the substituted aryl and substituted hetero aryl at least comprises one electron acceptor group.

2. The organic light-emitting diode according to claim 1 , wherein a volume concentration of the P-type semiconductor material doped in the hole injection material ranges from 1% to 10%.

3. The organic light-emitting diode according to claim 1 , wherein the hole injection material comprises the following compound:

wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are all independently selected from at least one of hydrogen atom, substituted or unsubstituted C1-C6 alkyl, and substituted or unsubstituted C5-C15 aryl; and R 9 , R 10 , R 11 and R 12 respectively comprise an aromatic group.

4. The organic light-emitting diode according to claim 1 , wherein a hole injection layer close to the anode and an electron transport layer close to the cathode are arranged between the anode and the cathode, wherein the hole injection layer comprises the hole injection material and the P-type semiconductor material doped in the hole injection material, and wherein the electron transport layer comprises the electron transport material and ytterbium doped in the electron transport material.

5. The organic light-emitting diode according to claim 4 , wherein a material of the electron transport layer comprises a first group,
wherein the first group is of a conjugated structure comprising three continuous benzene rings, wherein at least one carbon atom on the three continuous benzene rings is substituted by nitrogen atoms, and wherein the first group is of an axisymmetric structure.

6. The organic light-emitting diode according to claim 5 , wherein the first group comprises:

7. The organic light-emitting diode according to claim 1 , wherein the emitting layer comprises a fluorescent emitting layer or a phosphorescent emitting layer.

8. The organic light-emitting diode according to claim 1 , wherein a number of the emitting layers is two or three.

9. A display panel, comprising an organic light-emitting diode, wherein the organic light-emitting diode comprises an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between two adjacent emitting layers;
wherein the charge generation layer comprises a first layer unit and a second layer unit arranged in sequence between the anode and the cathode, wherein the first layer unit comprises a hole injection material doped with a P-type semiconductor material, and wherein the second layer unit comprises an electron transport material doped with ytterbium, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%;
wherein the P-type semiconductor material comprises the following compound:

wherein n is an integer greater than or equal to 1, X 1 , X 2 and X 3 each respectively has an independent structure of

 R′ is selected from any one of substituted aryl and substituted hetero aryl, and the substituent in the substituted aryl and substituted hetero aryl at least comprises one electron acceptor group.

10. The display panel according to claim 9 , wherein a volume concentration of the P-type semiconductor material doped in the hole injection material ranges from 1% to 10%.

11. The display panel according to claim 9 , wherein the hole injection material comprises the following compound:

wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are all independently selected from at least one of hydrogen atom, substituted or unsubstituted C1-C6 alkyl, and substituted or unsubstituted C5-C15 aryl; and R 9 , R 10 , R 11 and R 12 respectively comprise an aromatic group.

12. The display panel according to claim 9 , wherein a hole injection layer close to the anode and an electron transport layer close to the cathode are arranged between the anode and the cathode, wherein the hole injection layer comprises the hole injection material and the P-type semiconductor material doped in the hole injection material, and wherein the electron transport layer comprises the electron transport material and ytterbium doped in the electron transport material.

13. The display panel according to claim 12 , wherein a material of the electron transport layer comprises a first group;
wherein the first group is of a conjugated structure comprising three continuous benzene rings, at least one carbon atom on the three continuous benzene rings is substituted by nitrogen atoms, and wherein the first group is of an axisymmetric structure.

14. The display panel according to claim 13 , wherein the first group comprises:

15. The display panel according to claim 9 , wherein the emitting layer comprises a fluorescent emitting layer or a phosphorescent emitting layer.

16. The display panel according to claim 9 , wherein a number of the emitting layers is two or three.

17. A display device, comprising a display panel, the display panel comprising an organic light-emitting diode, wherein the organic light-emitting diode comprises an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between two adjacent emitting layers;
wherein the charge generation layer comprises a first layer unit and a second layer unit arranged in sequence between the anode and the cathode, wherein the first layer unit comprises a hole injection material and a P-type semiconductor material doped in the hole injection material, and wherein the second layer unit comprises an electron transport material and ytterbium doped in the electron transport material, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%;
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Assignees

• Shanghai Tianma Am Oled Co Ltd

Inventors

• Ma Huihui
• Wang Xiangcheng
• Hamada Yuji
• Niu Jinghua

Classifications

• G09G2310/0264

  Details of driving circuits · CPC title

• G09G3/3258

  with pixel circuitry controlling the voltage across the light-emitting element · CPC title

• H01L51/5278

  Electricity · mapped topic

• H01L51/5044

  Electricity · mapped topic

• H01L51/5206

  Electricity · mapped topic