Image sensor package to limit package height and reduce edge flare

Patent metadata

Field	Value
Publication number	US-10312276-B2
Application number	US-201715666901-A
Country	US
Kind code	B2
Filing date	Aug 2, 2017
Priority date	Aug 2, 2017
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array.

First claim

What is claimed is:

1. An image sensor package, comprising:
(a) a silicon substrate that includes a first substrate surface, and a second substrate surface that is opposite to the first substrate surface;
(b) an image sensor pixel array that is formed on the silicon substrate, and is positioned at the first substrate surface;
(c) a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate, and is positioned at the first substrate surface;
(d) a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region;
(e) at least one solder ball that is electrically coupled to the RDL, wherein the solder ball is situated to sides of the silicon substrate, no parts of the solder ball overlaps above the silicon substrate and no parts of the solder ball overlaps under the silicon substrate; and
(f) a cover glass that is directly bonded to the RDL, wherein the cover glass is located directly above the image sensor pixel array and wherein the RDL is situated to sides of the image sensor pixel array;
(g) an insulation material layer that is bonded to the RDL;
(h) an adhesive layer that causes the RDL to adhere to the silicon substrate; wherein the adhesive layer is bonded to the insulation material layer, and to the first substrate surface of the silicon substrate;
wherein the RDL includes a first RDL surface and a second RDL surface that is opposite to the first RDL surface; wherein the first RDL surface faces the same direction as the first substrate surface; and wherein the second RDL surface faces the same direction as the second substrate surface.

2. The image sensor package of claim 1 , wherein the at least one solder ball is electrically coupled to the second RDL surface.

3. The image sensor package of claim 2 , wherein the RDL is electrically coupled to the peripheral circuit region through a metallic member.

4. The image sensor package of claim 2 , wherein no part of the RDL is located directly above the image sensor pixel array, and wherein no part of the RDL is located directly below the image sensor pixel array.

5. The image sensor package of claim 1 , wherein the insulation material layer and the adhesive layer form a dam that is positioned on the first substrate surface, and is located to all sides of the image sensor pixel array; and wherein the dam has a side wall that faces towards the image sensor pixel array.

6. The image sensor package of claim 5 , further including a dark material layer that covers at least a part of the side wall of the dam.

7. The image sensor package of claim 6 , wherein the dark material layer comprises a black polymer material.

8. The image sensor package of claim 6 , wherein the dark material layer has a reflectivity of at most one percent.

9. An image sensor package, comprising:
(a) a silicon substrate that includes a first substrate surface, and a second substrate surface that is opposite to the first substrate surface;
(b) an image sensor pixel array that is formed on the silicon substrate, and is positioned at the first substrate surface;
(c) a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate, and is positioned at the first substrate surface;
(d) a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region;
(e) at least one solder ball that is electrically coupled to the RDL, wherein the solder ball is situated to sides of the silicon substrate, no parts of the solder ball overlaps above the silicon substrate and no parts of the solder ball overlaps under the silicon substrate; and
(f) a cover glass that is coupled to the RDL and wherein the RDL is situated to sides of the image sensor pixel array;
(g) an insulation material layer that is bonded to the RDL;
(h) an adhesive layer that causes the RDL to adhere to the silicon substrate; wherein the adhesive layer is bonded to the insulation material layer, and to the first substrate surface of the silicon substrate;
wherein the RDL includes a first RDL surface and a second RDL surface that is opposite to the first RDL surface; wherein the first RDL surface faces the same direction as the first substrate surface; and wherein the second RDL surface faces the same direction as the second substrate surface;
further including a cover layer that is bonded to the first RDL surface of the RDL and the cover glass.

10. The image sensor package of claim 9 , wherein the cover layer, the insulation material layer, and the adhesive layer form a dam that is positioned on the first substrate surface, and is located to all sides of the image sensor pixel array; and wherein the dam has a side wall that faces towards the image sensor pixel array.

11. The image sensor package of claim 10 , further including a dark material layer that covers at least a part of the side wall of the dam.

12. An image sensor system comprising an image sensor package, wherein the image sensor package includes:
(a) a silicon substrate that includes a first substrate surface, and a second substrate surface that is opposite to the first substrate surface;
(b) an image sensor pixel array that is formed on the silicon substrate, and is positioned at the first substrate surface;
(c) a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate, and is positioned at the first substrate surface;
(d) a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region;
(e) at least one solder ball that is electrically coupled to the RDL, wherein the solder ball is situated to sides of the silicon substrate, no parts of the solder ball overlaps above the silicon substrate and no parts of the solder ball overlaps under the silicon substrate; and
(f) a cover glass that is directly bonded to the RDL, wherein the cover glass is located directly above the image sensor pixel array and wherein the RDL is situated to sides of the image sensor pixel array;
(g) an insulation material layer that is bonded to the RDL;
(h) an adhesive layer that causes the RDL to adhere to the silicon substrate; wherein the adhesive layer is bonded to the insulation material layer, and to the first substrate surface of the silicon substrate;
wherein the RDL includes a first RDL surface and a second RDL surface; wherein the first RDL surface faces the same direction as the first substrate surface; and wherein the second RDL surface faces the same direction as the second substrate surface.

13. The image sensor system of claim 12 , wherein the at least one solder ball is electrically coupled to the second RDL surface.

14. The image sensor system of claim 13 , wherein
no part of the RDL is located directly above the image sensor pixel array; and
no part of the RDL is located directly below the image sensor pixel array.

15. The image sensor system of claim 14 , wherein the insulation material layer and the adhesive layer form a dam that is positioned on the first substrate surface, and is located to all sides of the image sensor pixel array; and
wherein the dam has a side wall that faces towards the image sensor pixel array.

16. The image sensor system of claim 15 , further including a dark material layer that covers at least a part of the side wall of the dam.

Assignees

• Omnivision Tech Inc

Inventors

• Chien Wei-Chih
• Lin Wei-Feng

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/252

  comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title