Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method

Patent metadata

Field	Value
Publication number	US-10310377-B2
Application number	US-201515309758-A
Country	US
Kind code	B2
Filing date	May 8, 2015
Priority date	May 8, 2014
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1):

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

First claim

The invention claimed is:

1. A composition for forming a film for lithography comprising:
a material for forming the film for lithography comprising a resin obtained through a reaction of at least a compound represented by the following formula (1) with a compound having crosslinking reactivity

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4; and
an acid generating agent.

2. The composition according to claim 1 , wherein at least one p is an integer of 1 to 4.

3. The composition according to claim 1 , wherein at least one R 0 represents the monovalent group having the oxygen atom.

4. The composition according to claim 1 , wherein the compound having crosslinking reactivity is an aldehyde, a ketone, a carboxylic acid, a carboxylic acid halide, a halogen-containing compound, an amino compound, an imino compound, an isocyanate, or an unsaturated hydrocarbon group-containing compound.

5. The composition according to claim 1 , wherein the resin is at least one selected from the group consisting of a novolac-based resin, an aralkyl-based resin, a hydroxystyrene-based resin, a (meth)acrylic acid-based resin and copolymers thereof.

6. The composition according to claim 1 , wherein the compound represented by the formula (1) is a compound represented by the following formula (2):

wherein, each m is independently an integer of 0 to 4, in which at least one m is an integer of 1 to 4.

7. The composition according to claim 1 , wherein the resin has at least one structure selected from the group consisting of structures represented by the following formulae (3-1) to (3-16):

wherein, each m is independently an integer of 0 to 4, in which at least one m is an integer of 1 to 4.

8. A composition for forming a film for lithography comprising:
a material for forming a film for lithography comprising a compound represented by formula (1),

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4 with at least one p being an integer of 1 to 4;
an organic solvent; and
an acid generating agent.

9. A film for lithography, formed using a composition comprising:
a material for forming the film for lithography comprising a compound represented by formula (1),

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4 with at least one p being an integer of 1 to 4;
an acid generating agent; and
an organic solvent.

10. A resist pattern forming method, comprising
step (A-1) of forming a film on a substrate by using a composition for forming the film comprising a material for forming the film for lithography comprising a compound represented by formula (1),

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4, and an organic solvent,
step (A-2) of forming at least one photoresist layer on the film, and
step (A-3) of, after step (A-2), irradiating a predetermined region of the photoresist layer with radiation, followed by developing.

11. A circuit pattern forming method comprising
step (B-1) of forming a film on a substrate by using a composition for forming a film for lithography, comprising an organic solvent and a compound represented by formula (1),

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4;
step (B-2) of forming an intermediate layer film on the film by using a silicon atom-containing resist intermediate layer film material,
step (B-3) of forming at least one photoresist layer on the intermediate layer film,
step (B-4) of, after step (B-3), irradiating a predetermined region of the photoresist layer with radiation, followed by developing to form a resist pattern, and
step (B-5) of, after step (B-4), etching the intermediate layer film with the resist pattern as a mask, etching the film with the obtained intermediate layer film pattern as an etching mask and etching the substrate with the obtained film pattern as an etching mask, to form a pattern on the substrate.

12. A method for purifying a composition for forming a film for lithography, the method comprising:
providing a material for forming the film for lithography comprising a resin obtained through a reaction of at least a compound represented by the following formula (1) with a compound having crosslinking reactivity

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4;
bringing a solution (A) comprising an organic solvent optionally immiscible with water, and the material for forming a film for lithography into contact with an acidic aqueous solution for extraction to form a purified material; and
combining at least one of an acid generating agent and an acid crosslinking agent with at least one of the purified material and the material for forming the film for lithography.

13. A method for forming a film for lithography comprising the steps of:
obtaining a composition for forming a film for lithography, the composition comprising a compound represented by the following formula (1):

wherein, each R 0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4 with at least one p being an integer of 1 to 4; and
forming a film for lithography from the composition and an acid

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Makinoshima Takashi
• Echigo Masatoshi

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title