Nanocrystals containing CdTe core with CdS and ZnS coatings
US-9202867-B2 · Dec 1, 2015 · US
US10309027B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10309027-B2 |
| Application number | US-201515118665-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 16, 2015 |
| Priority date | Feb 17, 2014 |
| Publication date | Jun 4, 2019 |
| Grant date | Jun 4, 2019 |
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The present invention provides a method for producing a solution of nanosheets, comprising the step of contacting an intercalated layered material with a polar aprotic solvent to produce a solution of nanosheets, wherein the intercalated layered material is prepared from a layered material selected from the group consisting of a transition metal dichalcogenide, a transition metal monochalcogenide, a transition metal trichalcogenide, a transition metal oxide, a metal halide, an oxychalcogenide, an oxypnictide, an oxyhalide of a transition metal, a trioxide, a perovskite, a niobate, a ruthenate, a layered III-VI semiconductor, black phosphorous and a V-VI layered compound. The invention also provides a solution of nanosheets and a plated material formed from nanosheets.
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The invention claimed is: 1. A method for producing a thermodynamically stable solution of nanosheets, comprising the step of contacting an intercalated layered material with a polar aprotic solvent to produce a solution of nanosheets, wherein the intercalated layered material is prepared from a layered material selected from the group consisting of a transition metal dichalcogenide, a transition metal monochalcogenide, a transition metal trichalcogenide, a transition metal oxide, a metal halide, an oxychalcogenide, an oxypnictide, an oxyhalide of a transition metal, a trioxide, a perovskite, a niobate, a ruthenate, a layered III-VI semiconductor, black phosphorous and a V-VI layered compound. 2. The method according to claim 1 , wherein the layered material is selected from the group consisting of a transition metal dichalcogenide, a transition metal monochalcogenide, a transition metal trichalcogenide, a transition metal oxide, a layered III-VI semiconductor, black phosphorous and a V-VI layered compound. 3. The method according to claim 2 , wherein the layered material is selected from the group consisting of a transition metal dichalcogenide, a transition metal monochalcogenide, a transition metal oxide, a layered III-VI semiconductor, black phosphorous and a V-VI layered compound. 4. The method according to claim 1 , wherein the V-VI layered compound is selected from the group consisting of Bi 2 Te 3 and Bi 2 Se 3 . 5. The method according to claim 1 , wherein the layered material is selected from the group consisting of MoS 2 , WS 2 , TiS 2 , NbSe 2 , NbTe 2 , TaS 2 , MoSe 2 , MoTe 2 , WSe 2 , Bi 2 Te 3 , Bi 2 Se 3 , FeSe, GaS, GaSe, GaTe, In 2 Se 3 , TaSe 2 , SnS 2 , SnSe 2 , PbSnS 2 , NiTe 3 , SrRuO 4 , V 2 O 5 , ZrSe 2 , ZrS 3 , HfTe 2 , Sb 2 Te 3 and black phosphorous. 6. The method according to claim 1 , wherein the layered material is selected from the group consisting of MoS 2 , WS 2 , TiS 2 , Bi 2 Te 3 , FeSe, V 2 O 5 , Bi 2 Se 3 , In 2 Se 3 , WSe 2 , MoSe 2 , GaTe, Sb 2 Te 3 and black phosphorous. 7. The method according to claim 1 , wherein the polar aprotic solvent is selected from the group consisting of tetrahydrofuran, dimethyl sulfoxide, ethers, amides, N-methyl pyrrolidone, acetonitrile, CS 2 , N-cyclohexyl-2-pyrrolidone, dimethyl sulfoxide, ammonia, methylamine solvents and mixtures thereof. 8. The method according to claim 1 , wherein the method further comprises the step of preparing the intercalated layered material by contacting a layered material with an electronic liquid to form an intercalated layered material. 9. The method according to claim 8 , wherein the electronic liquid comprises a metal and a solvent. 10. The method according to claim 9 , wherein the solvent is an amine solvent. 11. The method according to claim 9 , wherein the metal is selected from the group consisting of alkali metals and alkaline earth metals. 12. The method according to claim 1 , wherein the nanosheets are unfunctionalised. 13. The method according to claim 1 , wherein the nanosheets comprise four or less stacked monolayers. 14. The method according to claim 1 , wherein the nanosheets have the in-plane crystal structure of the layered material from which they are derived. 15. The method according to claim 1 , wherein the nanosheets substantially have the in-plane dimensions of the layers of the layered material from which they are derived. 16. The method according to claim 1 , wherein the nanosheets are undistorted. 17. The method according to claim 1 , wherein the nanosheets are unfolded. 18. The method according to claim 1 , wherein the intercalated layered material spontaneously dissolves in the polar aprotic solvent to produce the solution of nanosheets. 19. The method according to claim 1 , wherein the method further comprises the step of quenching the nanosheets to form a plated material. 20. The method of claim 19 , wherein the quenching step comprises electrochemically quenching the nanosheets. 21. The method of claim 19 , wherein the quenching step comprises chemically quenching the nanosheets. 22. The method according to claim 19 , wherein the plated material has the in-plane crystal structure of the layered material from which it is derived. 23. The method of claim 1 , wherein the method further comprises the step of functionalising the nanosheets by contacting the nanosheets with RX, wherein R is a hydrocarbon group and X is a suitable leaving group. 24. The method of claim 1 , wherein the method further comprises the step of removing the solvent by freeze drying to produce an aerogel of the nanosheets.
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