Semiconductor pressure sensor for harsh media application

Patent metadata

Field	Value
Publication number	US-10308502-B2
Application number	US-201715445096-A
Country	US
Kind code	B2
Filing date	Feb 28, 2017
Priority date	Feb 29, 2016
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.

First claim

The invention claimed is:

1. A semiconductor pressure sensor assembly suitable for use under an exhaust gas environment of an automobile engine for measuring a pressure of the exhaust gas which contains corrosive components, the pressure sensor assembly comprising:
a first cavity comprising an opening for allowing exposure to said exhaust gas;
a pressure sensor arranged in said cavity, the pressure sensor comprising a plurality of first bondpads made of or covered by a first corrosion resistant material;
a CMOS chip mounted on a first substrate, the CMOS chip comprising a plurality of first bondpads without corrosion resistant material on top;
an interconnection module comprising a second substrate and a plurality of electrically conductive paths made of a second corrosion resistant material, each of the conductive paths having a first bondpad and a second bondpad;
the first bondpads of the pressure sensor being connected via first bonding wires to the first bondpads of the interconnection module, the first bonding wires being made of a third corrosion resistant material;
the first bondpads of the CMOS chip being connected via second bonding wires to the second bondpads of the interconnection module;
wherein
the electrically conductive paths of the interconnection module provide electrical connection between the pressure sensor and the CMOS chip,
the CMOS chip, the first bondpads of the CMOS chip, the second bondpads of the interconnection module, and the second bonding wires, and part of the interconnection module are protected from exposure to said exhaust gas by encapsulation with a corrosion resistant plastic material, and
the first bondpads of the interconnection module are not protected from said exposure to said exhaust gas by encapsulation with said corrosion resistant plastic material.

2. A semiconductor pressure sensor assembly according to claim 1 , wherein the interconnection module is smaller than the pressure sensor.

3. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the first substrate is a lead frame.

4. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the first corrosion resistant material is Au or Pt, or an alloy consisting of a mixture of Au and Pt, or is an alloy containing at least Au or Pt;
and/or wherein the third corrosion resistant material is Au or Pt, or an alloy consisting of a mixture of Au and Pt.

5. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the second corrosion resistant material is a metal different from aluminum and different from copper,
or wherein the second corrosion resistant material is a metal alloy containing less than 5 atom % aluminum;
or wherein the second corrosion resistant material is a metal alloy containing less than 5 weight % aluminum;
or wherein the second corrosion resistant material is a metal alloy containing less than 5 atom % copper;
or wherein the second corrosion resistant material is a metal alloy containing less than 5 weight % copper.

6. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the second corrosion resistant material is a single metal selected from a group consisting of Au, Pt, Pd, Ta, Ti, W, Ag, Mo; or
wherein the second corrosion resistant material is a metal alloy comprising at least one metal selected from a group consisting of Au, Pt, Pd, Ta, Ti, W, Ag, Mo; or
wherein the second corrosion resistant material is a metal alloy comprising at least two metals selected from a group consisting of Au, Pt, Pd, Ta, Ti, W, Ag, Mo; or
wherein the second corrosion resistant material is a Ni—Pd—Au stack.

7. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the interconnection module is arranged next to the CMOS chip, and
wherein the pressure sensor is located at least partly above or on top of one or both of the CMOS chip and the interconnection module.

8. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the interconnection module is mounted above or on top of the CMOS chip thereby defining a first portion of the CMOS chip which is overlaid by the interconnection module and a second portion of the CMOS chip which is not overlaid;
the second bondpads of the interconnection module and the second bonding wires and the second portion of the CMOS chip which is not overlaid by the interconnection module being encapsulated by the plastic package.

9. A semiconductor pressure sensor assembly according to claim 1 , further comprising a gel applied in the first cavity on top of the pressure sensor.

10. A semiconductor pressure sensor assembly according to claim 1 , wherein the substrate of the interconnection module is made of a material selected from a group consisting of glass, silicon, germanium, alumina, a printed circuit board (PCB) material, a duroplast.

11. A semiconductor pressure sensor assembly according to claim 1 , wherein the CMOS chip is an integrated circuit comprising a microprocessor and non-volatile memory.

12. A semiconductor pressure sensor assembly according to claim 1 , wherein the CMOS chip further comprises second bondpads connected to the first substrate via third bonding wires, the third bonding wires also being encapsulated by the plastic package.

13. A semiconductor pressure sensor assembly according to claim 1 , having outer dimensions smaller than 5 mm×10 mm×8 mm.

14. A method of manufacturing a pressure sensor assembly according to claim 1 , comprising the steps of:
a) providing the first substrate;
b) providing the pressure sensor;
c) providing the interconnection module;
d) providing the CMOS chip;
e) mounting the CMOS chip on the first substrate;
f) mounting the interconnection module on the first substrate or on the CMOS chip;
g) applying second bonding wires to interconnect the second bondpads of the interconnection module and the first bondpads of the CMOS chip;
h) optionally applying third bonding wires to interconnect second bondpads of the CMOS chip and the first substrate;
i) applying a plastic package to cover or encapsulate at least the CMOS chip, and the first bondpads of the CMOS chip, and the second bonding wires, and the second bondpads of the interconnection module by a corrosion-resistant plastic,
in such a way as to leave the first bondpads of the interconnection module exposed, and
in such a way as to form a cavity sufficiently large to accommodate the pressure sensor;
j) mounting the pressure sensor in the cavity to the first substrate or to the plastic package or to the interconnection module;
k) applying first bonding wires to interconnect the first bondpads of the pressure sensor and the first bondpads of the interconnection module such that electrical connection is provided between the pressure sensor and the CMOS chip via the conductive paths of the interconnection module.

15. Use of a semiconductor pressure sensor according to claim 1 for measuring a pressure of an exhaust gas of an automobile engine.

16. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the first substrate is a lead frame that includes a copper lead frame or a copper-based lead frame.

17. A semiconductor pressure sensor assembly according to claim 1 ,
wherein the second corrosion resistant material is a single metal selected from Au, Pt, Pd, Ta, Ti, W, Ag, or Mo; or
wherein the second corrosion resistant material is a metal alloy including one or more of Au, Pt, Pd, Ta, Ti, W, Ag, Mo; or
wherein the second corrosion resistant material is a metal alloy including two or more of

Assignees

• Melexis Technologies Nv

Inventors

• Otte Laurent
• Chen Jian
• Van Der Wiel Appolonius Jacobus

Classifications

• H10W90/753

  between laterally-adjacent chips · CPC title

• B81B2207/115

  Protective layers applied directly to the device before packaging · CPC title

• B81B2201/0264

  Pressure sensors · CPC title

• G01L9/0054 Primary

  integral with a semiconducting diaphragm · CPC title

• G01L19/147

  Details about the mounting of the sensor to support or covering means · CPC title