Color filter uniformity for image sensor devices

Patent metadata

Field	Value
Publication number	US-10304885-B1
Application number	US-201815964353-A
Country	US
Kind code	B1
Filing date	Apr 27, 2018
Priority date	Nov 15, 2017
Publication date	May 28, 2019
Grant date	May 28, 2019

Abstract

The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

First claim

What is claimed is:

1. An image sensor device comprising:
a grid structure configured to receive one or more color filters over a semiconductor layer, wherein the grid structure comprises:
a first cell with a first sidewall and a common sidewall; and
a second cell with a second sidewall and the common sidewall shorter than the first and second sidewalls; and
a color filter disposed in the first and the second cells, wherein a top surface of the color filter is above the common sidewall and below the first and the second sidewalls.

2. The image sensor device of claim 1 , wherein the semiconductor layer comprises one or more sensing regions configured to sense radiation entering the semiconductor layer from the grid structure.

3. The image sensor device of claim 1 , wherein the common sidewall is shorter than the first and second sidewalls by at least 10%.

4. The image sensor device of claim 1 , further comprising:
a transparent material over the grid structure, wherein the transparent material forms a micro-lens over the first and second cells.

5. The image sensor device of claim 1 , wherein the color filter comprises a green color filter.

6. The image sensor device of claim 1 , wherein each of the first sidewall, common sidewall, and second sidewall comprises a bottom layer and a top dielectric layer with the common sidewall being shorter than the first and second sidewalls by at least 10%.

7. The image sensor device of claim 1 further comprising:
an other color filter in a third cell, wherein the other color filter is different from the color filter in the first and second cells, and wherein a top surface area of the other color filter is smaller than the top surface area of the color filter disposed in the first and second cells.

8. An image sensor system comprising:
a semiconductor layer with one or more radiation-sensing regions formed over an interconnect layer and configured to convert light to electric charge;
a grid structure formed over the semiconductor layer and configured to receive one or more color filters, wherein the grid structure comprises:
a first cell with a first sidewall and a common sidewall; and
a second cell with a second sidewall and the common sidewall shorter than the first and second sidewalls;
a color filter disposed in the first and the second cells, wherein a top surface of the color filter is above the common sidewall and below the first and second sidewalls; and
a micro-lens over each of the first and second cells.

9. The image sensor system of claim 8 , wherein a height of the common sidewall is less than 90% of a height of the first and second sidewalls.

10. The image sensor system of claim 8 , wherein the interconnect layer comprises a back-end of the line layer, a middle of the line layer, a front-end of the line layer, or a combination thereof.

11. The image sensor system of claim 8 , wherein each of the first and second cells is aligned with a respective radiation-sensing region of the one or more radiation-sensing regions of the semiconductor layer.

12. The image sensor system of claim 8 , wherein the grid structure is configured to guide the light to the one or more radiation-sensing regions of the semiconductor layer.

13. A method comprising:
forming a grid structure over a semiconductor layer of an image sensor device, wherein the grid structure comprises a first region with one or more cells having a common sidewall;
disposing one or more color filters in a second region of the grid structure;
recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and
disposing an other color filter in the group of cells.

14. The method of claim 13 , wherein the recessing the common sidewall comprises a dry etch process that recesses the common sidewall by at least 10%.

15. The method of claim 13 , wherein the recessing the common sidewall decreases a height of the common sidewall by at least 10%.

16. The method of claim 13 , wherein the disposing the one or more color filters comprises masking the first region of the grid structure.

17. The method of claim 13 , wherein the other color filter comprises a green color filter.

18. The method of claim 13 , wherein the one or more color filters comprise a red color filter or a blue color filter.

19. The method of claim 13 , wherein the grid structure comprises a top passivation layer which is partially etched when recessing the common sidewall in the first region.

20. The method of claim 13 , further comprising performing a bake to harden the other color filter.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chu Yi-Hsing
• Chou Chun-Hao
• Lee Kuo-Cheng
• Huang Yin-Chieh
• Cheng Yun-Wei

Classifications

• H01L27/14621 Primary

  Electricity · mapped topic

• H01L27/14605

  Electricity · mapped topic

• H01L27/14685

  Electricity · mapped topic

• H01L27/1464

  Electricity · mapped topic

• H01L27/14627

  Electricity · mapped topic