Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof
US-2015372148-A1 · Dec 24, 2015 · US
US10301543B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10301543-B2 |
| Application number | US-201415025918-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 3, 2014 |
| Priority date | Oct 4, 2013 |
| Publication date | May 28, 2019 |
| Grant date | May 28, 2019 |
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Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.
Opening claim text (preview).
We claim at least the following: 1. A method of forming a quantum dot (QD), comprising: a) mixing a solution A comprising solutes of precursor A with a solution B comprising solutes of precursor B to form solution C; b) flowing solution C into a nucleating coil to produce QD seeds by nucleating solution C at a first temperature; and c) flowing solution C including the QD seeds into a growth coil to grow the QDs at a second temperature, wherein b) and c) are independently performed, wherein the first temperature and the second temperature are different, and wherein solutions A and B further comprise an inert immiscible fluid. 2. The method of claim 1 , further comprising: d) introducing the QDs from c) to a solution; and e) flowing the mixture of QDs and the solution of step d) through a final loop, wherein b), c), d), and e) are independently performed. 3. The method of claim 1 , wherein the first temperature is about 110 to 130° C. and the second temperature is about 70 to 90° C. 4. The method of claim 2 , wherein the solution of step d) is a solution including a component selected from the group consisting of: CdCl 2 , TBAI, tetrabutylammonium bromide, tetrabutylammonium chloride, inorganic halides, pseudohalides, halometallate ligands, and a combination thereof. 5. The method of claim 1 , wherein the inert immiscible fluid is a fluorinated fluid. 6. The method of claim 1 , wherein the QD is a PbS QD passivated with CdCl 2 or TBAI. 7. The method of claim 1 , wherein the QD is a PbS QD passivated with a component selected from the group consisting of: tetrabutylammonium bromide, tetrabutylammonium chloride, inorganic halides, pseudohalides, halometallate ligands, and a combination thereof. 8. The method of claim 1 , where the QD is CuInS. 9. The method of claim 1 , where the QD is CuInS and passivated with CdCl 2 or TBAI. 10. The method of claim 1 , where the QD is CoS or Co 2 S 3 . 11. The method of claim 1 , where the QD is CoS or Co 2 S 3 and passivated with CdCl 2 or TBAI. 12. The method of claim 1 , wherein the steps are performed in a continuous flow process. 13. The method of claim 1 , wherein step a) is performed in a mixing chip. 14. The method of claim 1 , wherein the method further comprises flowing QDs grown in the growth coil into a third coil and passivating the QDs using a halide or cadmium treatment. 15. The method of claim 1 , wherein the method further comprises preparing precursor A. 16. The method of claim 15 , wherein the method further comprises preparing precursor B. 17. The method of claim 16 , wherein preparing precursor A comprises mixing lead(II) oxide, 1-octadecene, and oleic acid and preparing precursor B comprises mixing bis(trimethylsilyl) sulfide and 1-octadecene. 18. The method of claim 5 , wherein the fluoridated fluid is perfluorotripentylamine (C 15 F 33 N), perfluorotrihexylamine (C 18 F 39 N), or a combination thereof.
Nanoparticles · CPC title
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
using solutions · CPC title
Dimensions of the flow channels · CPC title
Plastic · CPC title
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