Organic optoelectronics with electrode buffer layers

Patent metadata

Field	Value
Publication number	US-10297775-B2
Application number	US-201314417893-A
Country	US
Kind code	B2
Filing date	Jul 31, 2013
Priority date	Aug 1, 2012
Publication date	May 21, 2019
Grant date	May 21, 2019

Abstract

There is disclosed an organic optoelectronic device comprising two electrodes in superposed relation comprising an anode and a cathode, at least one donor material and at least one acceptor material located between the two electrodes forming a donor-acceptor heterojunction, an anode buffer layer adjacent to the anode and a cathode buffer layer adjacent to the cathode, and an intermediate layer adjacent to at least one of the anode and cathode buffer layers, wherein when the intermediate layer is adjacent to the anode buffer layer, the intermediate layer is chosen to facilitate the transport of holes to the anode buffer layer, and when the intermediate layer is adjacent to the cathode buffer layer, the intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer. Also disclosed are methods of making the same.

First claim

What is claimed is:

1. An organic optoelectronic device comprising:
two electrodes in superposed relation comprising an anode and a cathode;
at least one donor material and at least one acceptor material located between the two electrodes forming a donor-acceptor heterojunction;
an anode buffer layer adjacent to the anode and a cathode buffer layer adjacent to the cathode, wherein the anode buffer layer and the cathode buffer layer are independently chosen from transition metal oxides and conductive polymers; and
an intermediate layer chosen from elementally pure metals and metal alloys composed of two or more elementally pure metals, wherein the intermediate layer is adjacent to the anode buffer layer and between the anode buffer layer and the at least one donor material, or wherein the intermediate layer is adjacent to the cathode buffer layer and between the cathode buffer layer and the at least one acceptor material,
wherein when the intermediate layer is adjacent to the anode buffer layer, the intermediate layer is chosen to facilitate the transport of holes to the anode buffer layer, and
when the intermediate layer is adjacent to the cathode buffer layer, the intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer.

2. The device of claim 1 , wherein the anode buffer layer and the cathode buffer layer are independently chosen from transition metal oxides.

3. The device of claim 1 , wherein the transition metal oxides are MoO 3 , V 2 O 5 , WO 3 , CrO 3 , Co 3 O 4 , NiO, ZnO, and TiO 2 .

4. The device of claim 2 , wherein the anode and cathode buffer layers comprise the same transition metal oxide.

5. The device of claim 4 , wherein the same transition metal oxide is MoO 3 .

6. The device of claim 1 , wherein the intermediate layer is chosen from Ni, Ag, Au, Al, Mg, Pt, Pd, Cu, Ca, Ti, and In.

7. The device of claim 1 , wherein the intermediate layer comprises metal nanoparticles, nanoclusters, or nanorods.

8. The device of claim 1 , wherein the intermediate layer has a thickness of 5 nm or less.

9. The device of claim 1 , wherein the intermediate layer has an average thickness of 1 nm or less.

10. The device of claim 1 , wherein the intermediate layer is adjacent to the anode buffer layer and between the anode buffer layer and the at least one donor material, the device further comprising a second intermediate layer adjacent to the cathode buffer layer and between the cathode buffer layer and the at least one acceptor material, wherein the second intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer.

11. The device of claim 1 , further comprising an exciton blocking layer located between at least one of the anode and the donor material and the cathode and the acceptor material.

12. The device of claim 1 , wherein the two electrodes are chosen from metals, metal substitutes, conducting oxides, conductive polymers, graphene, and carbon nanotubes.

13. The device of claim 12 , wherein at least one of the two electrodes is transparent.

14. The device of claim 13 , wherein the electrode opposing the transparent electrode is reflective.

15. The device of claim 13 , wherein the electrode opposing the transparent electrode is at least semi-transparent.

16. The device of claim 12 , wherein the two electrodes are at least semi-transparent.

17. The device of claim 11 , wherein the at least one exciton blocking layer comprises a material chosen from BCP, BPhen, NTCDA, PTCBI, TPBi, Ru(acac)3, and Alq2 OPH.

18. An organic optoelectronic device comprising:
two electrodes in superposed relation comprising an anode and a cathode;
at least one donor material and at least one acceptor material located between the two electrodes forming a donor-acceptor heterojunction;
at least one buffer layer chosen from an anode buffer layer adjacent to the anode and a cathode buffer layer adjacent to the cathode, wherein the at least one buffer layer is independently chosen from transition metal oxides and conductive polymers; and
an intermediate layer chosen from elementally pure metals and metal alloys composed of two or more elementally pure metals, wherein the intermediate layer is adjacent to the anode buffer layer and between the anode buffer layer and the at least one donor material, or wherein the intermediate layer is adjacent to the cathode buffer layer and between the cathode buffer layer and the at least one acceptor material,
wherein when the intermediate layer is adjacent to the anode buffer layer, the intermediate layer is chosen to facilitate the transport of holes to the anode buffer layer, and
when the intermediate layer is adjacent to the cathode buffer layer, the intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer.

19. The device of claim 18 , wherein the intermediate layer is chosen from Ni, Ag, Au, Al, Mg, Pt, Pd, Cu, Ca, Ti, and In.

20. The device of claim 18 , wherein the intermediate layer comprises metal nanoparticles, nanoclusters, or nanorods.

Assignees

• Univ Michigan Regents

Inventors

• Lassiter Brian
• Zimmerman Jeramy D
• Forrest Stephen R

Classifications

• B82Y10/00 Primary

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• H01L51/0053

  Electricity · mapped topic

• H01L51/0048

  Electricity · mapped topic

• H01L2251/303

  Electricity · mapped topic

• H01L51/0086

  Electricity · mapped topic