Negative electrode active material for electric device
US-9325003-B2 · Apr 26, 2016 · US
US10297360B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10297360-B2 |
| Application number | US-201415536878-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2014 |
| Priority date | Dec 17, 2014 |
| Publication date | May 21, 2019 |
| Grant date | May 21, 2019 |
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A negative electrode active material includes a silicon-containing alloy having a composition represented by: Si x Sn y M z A a (A is unavoidable impurities, M is one or more transition metal elements, x, y, z, and a represent values of percent by mass, and 0<x<100, 0<y<100, 0<z<100, and 0≤a<0.5 and x+y+z+a=100). The silicon-containing alloy has a lattice image subjected to Fourier transform processing to obtain a diffraction pattern and a size determined as an average value of maximum five major axis diameters of regions having a periodic array from a Fourier image obtained by subjecting a diffraction ring portion present in a width of from 0.7 to 1.0 when a distance between Si regular tetrahedrons is 1.0 in this diffraction pattern to inverse Fourier transform is 10 nm or less.
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The invention claimed is: 1. A negative electrode active material for an electric device comprising a silicon-containing alloy comprising a composition represented by the following Chemical Formula (I) [Chemical Formula 1] Si x Sn y M z A a (I) wherein in Chemical Formula (I) above, A is an impurity, M is one or two or more transition metal elements, x, y, z, and a represent values of percent by mass, and 0<x<100, 0<y<100, 0<z<100, and 0≤a<0.5 and x+y+z+a=100, wherein a size of a periodic array region is 4.7 nm or less, the periodic array region being a crystallized region scattered in an amorphous silicon region, and the silicon-containing alloy having a first phase containing amorphous silicon as a main component and a second phase containing a transition metal and silicon and is adjacent to the first phase. 2. The negative electrode active material according to claim 1 , wherein the size of the periodic array region is 2.5 nm or less. 3. The negative electrode active material according to claim 1 , wherein M in Chemical Formula (1) above is titanium (Ti). 4. The negative electrode active material according to claim 1 , wherein 7<z<100 in Chemical Formula (1) above. 5. The negative electrode active material according to claim 1 , wherein M is Al, and x, y, z, and a represent values of percent by mass, and 12≤x<100, 0<y≤45, and 0<z≤43. 6. The negative electrode active material according to claim 1 , wherein M is V, and x, y, z, and a represent values of percent by mass, and 27≤x<100, 0<y≤73, and 0<z≤73. 7. The negative electrode active material according to claim 1 , wherein a crystalline silicide phase is contained in the amorphous silicon region. 8. The negative electrode active material according to claim 1 , wherein the first phase is more amorphized than the second phase. 9. A negative electrode for an electric device comprising the negative electrode active material according to claim 1 . 10. An electric device comprising the negative electrode according to claim 9 .
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