Wideband ultra-high refractive index mesoscopic crystal structure using space-filling of electric dipole and optical device using the same

Patent metadata

Field	Value
Publication number	US-10295885-B2
Application number	US-201815927601-A
Country	US
Kind code	B2
Filing date	Mar 21, 2018
Priority date	Sep 21, 2015
Publication date	May 21, 2019
Grant date	May 21, 2019

Abstract

A wideband ultra-high refractive index mesoscopic crystal structure including: a first layer with high-conductivity unit bodies arranged in a matrix form, and a low-conductivity material disposed between the high-conductivity unit bodies; a second layer with high-conductivity unit bodies arranged in a matrix form, and a low-conductivity material disposed between the high-conductivity unit bodies; a first shield layer existing between the first and second layers and made of a low-conductivity material; and a second shield layer made of a low-conductivity material disposed on a side of the second layer such that the second layer is disposed between the first shield layer and the second shield layer, wherein the high-conductivity unit bodies in the first layer overlap the high-conductivity unit bodies arranged in the second layer, and wherein the first layer, the first shield layer, the second layer, and the second shield layer are sequentially stacked one or more times.

First claim

We claim:

1. A wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole, comprising:
a first layer in which a plurality of high-conductivity unit bodies is arranged in a matrix form, and a low-conductivity material is disposed between the high-conductivity unit bodies to insulate the high-conductivity unit bodies from each other;
a second layer in which a plurality of high-conductivity unit bodies is arranged in a matrix form, and a low-conductivity material is disposed between the high-conductivity unit bodies to insulate the high-conductivity unit bodies from each other;
a first shield layer existing between the first and second layers and made of a low-conductivity material; and
a second shield layer made of a low-conductivity material and disposed on a side of the second layer such that the second layer is disposed between the first shield layer and the second shield layer,
wherein, the high-conductivity unit bodies in the first layer overlap the plurality of high-conductivity unit bodies arranged in the second layer, and
wherein the first layer, the first shield layer, the second layer, and the second shield layer are sequentially stacked one or more times.

2. The wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole of claim 1 , wherein the low-conductivity material includes at least one of silicon dioxide, silicon, polytetrafluoroethylenes, polydimethylsiloxanes, acrylites, zinc oxide, aluminum oxide, and silver oxide.

3. The wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole of claim 1 , wherein the high-conductivity unit bodies include at least one of Al, Ag, Au, Pt, Pd, Cu, Zn, Ti, Fe, Cr, Ni, Mg, Na, K, Ir, Os, W, Re, Ru, and Rh.

4. The wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole of claim 1 , wherein, the high-conductivity unit bodies have a rectangular hexahedral shape, and
wherein each of the high-conductivity unit bodies in the first layer overlaps four of the high-conductivity unit bodies arranged in the second layer, and
wherein the center of each of the high-conductivity unit bodies in the first layer is at converging apexes of the four high-conductivity unit bodies.

5. The wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole of claim 1 , wherein, the high-conductivity unit bodies have a hexagonal column shape, and
wherein each of the high-conductivity unit bodies in the first layer overlaps three of the high-conductivity unit bodies arranged in the second layer, and
wherein the center of the each high-conductivity unit body in the first layer is at converging apexes of the three high-conductivity unit bodies.

6. The wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole of claim 1 , wherein the shield layer includes an illuminant.

7. An electromagnetic wave-absorbing device, which absorbs an electromagnetic wave using the mesoscopic crystal structure of claim 1 .

8. An electro-optical modulator, comprising:
the mesoscopic crystal structure of claim 1 ; and
a direct current power supply configured to apply a direct electric field to the mesoscopic crystal structure.

9. A refractive index sensor using the mesoscopic crystal structure of claim 1 , wherein the low-conductivity material included in the mesoscopic crystal structure is a fluid, and
wherein a refractive index of the low-conductivity material is calculated by measuring a refractive index of the mesoscopic crystal structure.

10. An antigen sensor, comprising:
the mesoscopic crystal structure of claim 1 ; and
an antibody, wherein, the low-conductivity material in the mesoscopic crystal structure is a fluid, and
wherein the antibody is attached to surfaces of the high-conductivity unit bodies in the mesoscopic crystal structure, and
wherein a density of the antibody is calculated by measuring whether the antibody is bonded to an antigen.

11. A graded index lens using the mesoscopic crystal structure of claim 1 , wherein a refractive index is determined depending on a position of an overlap portion between the high-conductivity unit bodies in the first layer and the high-conductivity unit bodies in the second layer on the mesoscopic crystal structure.

12. A refractive index-grating device, comprising the mesoscopic crystal structure of claim 1 , wherein the high-conductivity unit bodies in the first layer in the mesoscopic crystal structure are different in width from the high-conductivity unit bodies in the second layer, and they periodically overlap each other, which causes a periodic change in refractive index.

13. The wideband ultra-high refractive index mesoscopic crystal structure using space-filling of an electric dipole of claim 1 , wherein, the high-conductivity unit bodies in the mesoscopic crystal structure are made of a ferroelectric material, and
wherein a polarized electromagnetic wave is incident, a wavelength of the polarized electromagnetic wave is detected according to a ferroelectric recovery of the ferroelectric material.

14. A nonlinear optical device, comprising:
a mesoscopic crystal structure of claim 1 ;
a third layer; and
a fourth layer, wherein
the mesoscopic crystal structure exists between the third layer and the fourth layer.

15. The nonlinear optical device of claim 14 , wherein the third layer is made of vacuum, air, or a homogeneous dielectric material.

16. The nonlinear optical device of claim 14 , wherein the third layer and the fourth layer have a mesoscopic crystal structure which is different in aspect ratio from the mesoscopic crystal structure.

17. The nonlinear optical device of claim 14 , further comprising:
a metallic reflective layer.

18. The nonlinear optical device of claim 14 , wherein at least one of the first layer, the first shield layer, the second layer, and the second shield layer has optical nonlinearity.

19. An optical modulator, comprising a wideband ultra-high refractive index mesoscopic crystal structure of claim 1 , wherein
at least one of the first layer, the first shield layer, the second layer, and the second shield layer has optical nonlinearity; and
wherein the optical modulator operates using a refractive index that varies depending on an intensity of an electromagnetic field applied thereto.

Assignees

• Korea Advanced Inst Sci & Tech

Inventors

• Shin Jonghwa
• Lee Yong-Hee
• Chang Tae Yong

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G01N21/41

  Refractivity; Phase-affecting properties, e.g. optical path length (G01N21/21 takes precedence) · CPC title

• H01L21/027

  Electricity · mapped topic

• G02F1/3551 Primary

  Crystals · CPC title

• G02F1/0126

  Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass · CPC title