High resolution, high frame rate, low power image sensor

Patent metadata

Field	Value
Publication number	US-10295669-B2
Application number	US-201815945623-A
Country	US
Kind code	B2
Filing date	Apr 4, 2018
Priority date	Apr 7, 2014
Publication date	May 21, 2019
Grant date	May 21, 2019

Abstract

An apparatus and method for determining a distance to an object using a binary, event-based image sensor. In one aspect, the image sensor includes memory circuitry and address decode circuitry. In one aspect, activation of a photodiode of the image sensor array by receipt of one or more photons is able to be used directly as an input to logic circuitry. In one embodiment, the image sensor includes photodiodes operating in an avalanche photodiode mode or Geiger mode. In one embodiment, the imaging sensor includes photodiodes operating as thresholded integrating pixels. The imaging sensor can be fabricated from one or more substrates having at least a first and a second voltage portion.

First claim

What is claimed is:

1. A sensor for measuring a distance to an object, the sensor comprising:
an image sensor comprising an array of photodiodes, the image sensor operatively coupled to an interrogation source and configured to receive a reflected beam generated by illumination of the object by an interrogation beam of the interrogation source, and wherein the image sensor is configured to develop a signal based on an array address of a photodiode of the array of photodiodes activated by incidence of the reflected beam on the array;
a memory comprising a latch circuit configured to generate a set signal in direct response to the photodiode receiving the reflected beam, wherein the set signal reports the array address of the photodiode;
an address decode circuit configured to store the array address;
a timing circuit operatively coupled to the address decode circuit for reading the array address; and
an analysis circuit operatively coupled to the interrogation source and to the image sensor, and configured to determine a distance to the object based upon the controlled angle of the photonic interrogation source and upon the array address.

2. The sensor according to claim 1 , wherein the address decode circuit comprises a memory configured to store column addresses of the array of photodiodes, and wherein each photodiode of the array of photodiodes is operatively coupled to a respective latch circuit.

3. The sensor according to claim 2 , wherein the timing circuit is configured to determine a state of the columns addresses sequentially, and further configured to withhold activation of timing of a read for a next column address until the column address corresponding to the reported array address is reached.

4. The sensor according to claim 2 , wherein each photodiode of the array of photodiodes is operatively coupled to a respective address decode circuit configured to store a respective column address, and wherein each row of the array of photodiodes is operatively coupled to a respective row latch circuit.

5. The sensor according to claim 4 , wherein the set signal is configured to deactivate other photodiodes of the array of photodiodes on a same row as the photodiode receiving the reflected beam.

6. The sensor according to claim 4 , wherein the timing circuit is configured to determine a state of the respective row latch circuits sequentially, and further configured to withhold activation of timing of a read for a next row latch circuit until the row latch circuit corresponding to the reported array address is reached.

7. The sensor according to claim 1 , wherein the array of photodiodes comprises avalanche photodiodes configured to operate in Geiger mode.

8. The sensor according to claim 1 , wherein the array of photodiodes comprises active photodiodes, and further wherein a photodiode of the array of photodiodes is activated when a voltage of the photodiode reaches a threshold level based on incident photons.

9. The sensor according to claim 1 , wherein the image sensor is disposed at a controlled distance from the interrogation source, and the analysis circuit is configured to determine the distance to the object based on triangulation of the controlled angle, the controlled distance, and an angle of incidence determined by the array address of the photodiode.

10. The sensor according to claim 1 , wherein a control timing circuit activates photodiodes of the array of photodiodes with a controlled activation period, based on a time-of-flight and a return angle of the interrogation beam to return to the image sensor at a maximum range.

11. The sensor according to claim 8 , wherein the sensor further comprises an ambient light sensor configured to detect an ambient light level, and further wherein the controlled activation period is based on a detected ambient light level.

12. A pixel circuit, comprising:
a photodiode;
a load comprising at least one of an active and a passive element, electrically coupled to the photodiode; and
a plurality of transistors electrically coupled to the photodiode, the plurality of transistors comprising a latch circuit;
wherein a control of the photodiode is referenced to ground and configured to selectively activate the photodiode, wherein the photodiode that is referenced to ground is configured to develop a current based on photons incident at the photodiode, the load configured to convert the current to a voltage pulse, the voltage pulse configured as an input to set a logic level of the latch circuit.

13. The pixel circuit according to claim 12 , wherein the pixel circuit further comprises a voltage clamp circuit electrically coupled to the photodiode and to the control, the voltage clamp configured to limit a voltage level of the voltage pulse input to the latch circuit.

14. The pixel circuit according to claim 12 , wherein the photodiode is an avalanche photodiode configured to operate in Geiger mode, and the current is an avalanche current triggered by the photons.

15. The pixel circuit according to claim 12 , wherein the photodiode is an active photodiode, and further wherein the current is developed when a voltage of the photodiode reaches a threshold level based on the photons incident at the photodiode.

16. The pixel circuit according to claim 12 , wherein the load comprises a resistor.

17. The pixel circuit according to claim 12 , wherein the photodiode is actively quenched, to control the time period between successive firings of the photodiode.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Deane Peter

Classifications

• G01S7/4816 Primary

  of receivers alone · CPC title

• H04N23/56

  provided with illuminating means · CPC title

• G01S17/894

  Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar · CPC title

• G01S7/4817

  relating to scanning · CPC title

• G01S17/10

  using transmission of interrupted, pulse-modulated waves (determination of distance by phase measurements G01S17/32) · CPC title