Method of creating boron comprising layer

US10294564B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10294564-B2
Application numberUS-201715688653-A
CountryUS
Kind codeB2
Filing dateAug 28, 2017
Priority dateAug 28, 2017
Publication dateMay 21, 2019
Grant dateMay 21, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method for forming boron (B) containing Al2O3 composite layers includes (a) reacting a substrate surface with an aluminum-containing precursor to form a first monolayer, (b) purging excess aluminum-containing precursor and reaction by-product, (c) reacting the first monolayer with a second precursor, and (d) purging excess second precursor and reaction by-product, such that steps (a) to (d) constitute one cycle, the composite layers being formed after a plurality of cycles, and the resultant composite layers have a chemical formula of BxAl2−xO3, where x varies in the range of 0 and 2.

First claim

Opening claim text (preview).

What is claimed: 1. A method for forming boron (B) containing Al 2 O 3 composite layers, comprising: (a) reacting a substrate surface with an aluminum-containing precursor to form a first monolayer; (b) purging excess aluminum-containing precursor and reaction by-product; (c) reacting the first monolayer with a boron-containing precursor to form a boron-containing surface; and (d) purging excess boron-containing precursor and reaction by-product, wherein steps (a) to (d) constitute one cycle, the composite layers being formed after a plurality of cycles, and wherein the resultant composite layers have a chemical formula of B x Al 2−x O 3 , where x varies in the range of greater than 0 and less than 2. 2. The method of claim 1 , wherein step (c) further comprises: (c3) reacting the boron-containing surface with an oxygen-containing precursor; and (c4) purging excess oxygen-containing precursor and reaction by-product. 3. The method of claim 2 , wherein the boron-containing precursor is boric acid (BH 3 O 3 ) and the oxygen-containing precursor is water (H 2 O). 4. The method of claim 1 , wherein the boron-containing precursor comprises a boron-containing component and an alcohol compound component. 5. The method of claim 4 , wherein the boron-containing component is boric acid (BH 3 O 3 ) and the alcohol compound component is a C 1 -C 6 alcohol compound. 6. The method of claim 4 , wherein the boron-containing component comprises at least one of boric acid (BH 3 O 3 ), trimethyl borate (TMB) (C 3 H 9 BO 3 ), boron tribromide (BBr 3 ), boron trifluoride (BF 3 ), diboron tetrafluoride (B 2 F 4 ), triisopropylborane ((C 3 H 7 ) 3 B), triethoxyborane ((C 2 H 5 O) 3 B), or triisopropoxyborane ((C 3 H 7 O) 3 B). 7. The method of claim 4 , wherein the alcohol compound component comprises a C 1 -C 6 alcohol compound. 8. The method of claim 4 , wherein the boron-containing precursor is enriched with 11 B or 10 B isotopic elements. 9. The method of claim 1 , wherein the boron-containing precursor is trimethyl borate (TMB) (C 3 H 9 BO 3 ). 10. The method of claim 1 , wherein the boron-containing precursor comprises a boron-containing component and an oxygen-containing component. 11. The method of claim 10 , wherein the oxygen-containing component comprises at least one of water (H 2 O), ozone (O 3 ), hydrogen peroxide (H 2 O 2 ), or oxygen (O 2 ). 12. The method of claim 1 , wherein the aluminum-containing precursor comprises at least one of trimethylaluminum (Al(CH 3 ) 3 ) (TMA), triethylaluminum ((C 2 H 5 ) 3 Al) (TEA), triethyl(tri-sec-butoxy)dialuminum ((C 2 H 5 ) 3 Al 2 (OC 4 H 9 ) 3 ), aluminum chloride (AlCl 3 ), aluminum isopropoxide (Al((OCH(CH 3 ) 2 ) 3 ), dimethylaluminum isopropoxide ((CH 3 ) 2 AlOCH(CH 3 ) 2 ), tris(2,2,6,6-tetramethyl-3,5-heptanedionato)aluminum (Al(TMHD) 3 ), tri-isobutylaluminum ((C 4 H 9 ) 3 Al), aluminum hexafluoroacetylacetonate (Al(CF 3 COCHCOCF 3 ) 3 ), aluminum ethoxide (Al(OC 2 H 5 ) 3 ), aluminum s-butoxide (Al(OC 4 H 9 ) 3 ), or aluminum acetylacetonate (Al(CH 3 COCHCOCH 3 ) 3 ). 13. The method of claim 1 , wherein step (c) further comprises: (c1) reacting the first monolayer with an oxygen-containing precursor to form an oxygen-containing surface; and (c2) purging excess oxygen-containing precursor and reaction by-product. 14. The method of claim 13 , wherein step (c) further comprises: (c3) reacting the oxygen-containing surface with the boron-containing precursor, wherein step (c3) is conducted prior to step (c2). 15. The method of claim 14 , wherein the oxygen-containing precursor is water (H 2 O) and the boron-containing precursor is trimethyl borate (TMB) (C 3 H 9 BO 3 ). 16. The method of claim 13 , wherein step (c) further comprises: (c3) reacting the oxygen-containing surface with the boron-containing precursor. 17. The method of claim 16 , wherein the boron-containing precursor comprises a boron-containing component and an alcohol compound component. 18. The method of claim 17 , wherein the boron-containing component is boric acid (BH 3 O 3 ) and the alcohol compound component is a C 1 -C 6 alcohol compound. 19. A method for forming boron (B) containing Al 2 O 3 composite layers, comprising: (a) reacting a substrate surface with an aluminum-containing precursor to form a first monolayer; (b) purging excess aluminum-containing precursor and reaction by-product; (c) reacting the first monolayer with a second precursor, the second precursor comprising a boron-containing component and an alcohol compound component; and (d) purging excess second precursor and reaction by-product, wherein steps (a) to (d) constitute one cycle, the composite layers being formed after a plurality of cycles, and wherein the resultant composite layers have a chemical formula of B x Al 2−x O 3 , where x varies in the range of greater than 0 and less than 2. 20. A method for forming boron (B) containing Al 2 O 3 composite layers, comprising: (a) reacting a substrate surface with an aluminum-containing precursor to form a first monolayer; (b) purging excess aluminum-containing precursor and reaction by-product; (c) reacting the first monolayer with a second precursor, the second precursor comprising a boron-containing component and an oxygen-containing component; and (d) purging excess second precursor and reaction by-product, wherein steps (a) to (d) constitute one cycle, the composite layers being formed after a plurality of cycles, and wherein the resultant composite layers have a chemical formula of B x Al 2−x O 3 , where x varies in the range of greater than 0 and less than 2.

Assignees

Inventors

Classifications

  • characterized by the use of precursors specially adapted for ALD · CPC title

  • specially adapted for making ternary or higher compositions · CPC title

  • Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

  • C23C16/403Primary

    of aluminium, magnesium or beryllium · CPC title

  • Borides · CPC title

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What does patent US10294564B2 cover?
A method for forming boron (B) containing Al2O3 composite layers includes (a) reacting a substrate surface with an aluminum-containing precursor to form a first monolayer, (b) purging excess aluminum-containing precursor and reaction by-product, (c) reacting the first monolayer with a second precursor, and (d) purging excess second precursor and reaction by-product, such that steps (a) to (d) c…
Who is the assignee on this patent?
Uchicago Argonne Llc
What technology area does this patent fall under?
Primary CPC classification C23C16/45553. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 21 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).