Semiconductor device and method of manufacturing the same
US-2017271401-A1 · Sep 21, 2017 · US
Semiconductor device having hall elements formed in a semiconductor substrate and a magnetic body flux concentrator
US10290677B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10290677-B2 |
| Application number | US-201715457290-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2017 |
| Priority date | Mar 15, 2016 |
| Publication date | May 14, 2019 |
| Grant date | May 14, 2019 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a portion having an approximate quadrant shape, and a portion contiguous to the approximate quadrant portion and substantially parallel to the semiconductor substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a semiconductor substrate having a plurality of Hall elements formed therein; and a magnetic body formed on the semiconductor substrate with a protective layer interposed between the magnetic body and the semiconductor substrate, the magnetic body having a magnetic flux converging function, and the magnetic body having a contour having an outer circumferential portion in vertical cross-section, at least a part of the outer circumferential portion comprising a curve-shaped portion and a portion continuous from the curve-shaped portion and substantially parallel to the semiconductor substrate, and a gap being formed between the substantially parallel portion and the protective layer. 2. A semiconductor device according to claim 1 , wherein the curve-shaped portion has an approximate quadrant shape. 3. A semiconductor device according to claim 2 , wherein the approximate quadrant shape in vertical cross-section of the magnetic body has one terminal portion at which a tangential direction is substantially perpendicular to the semiconductor substrate. 4. A semiconductor device according to claim 2 , wherein the semiconductor device has a portion parallel to the semiconductor substrate as a portion continuous from one terminal portion of the approximate quadrant shape, which is apart of the outer circumferential portion of the magnetic body in vertical cross-section, and wherein the parallel portion comprises a portion that at least partially covers a region of the plurality of Hall elements. 5. A semiconductor device according to claim 1 , further comprising a base layer configured to connect the semiconductor substrate and the magnetic body to each other, wherein the base layer is kept from covering a region of the plurality of Hall elements.
Assignees
Inventors
Classifications
- G01R33/0052Primary
Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title
- G01R33/07Primary
Hall effect devices · CPC title
Electricity · mapped topic
Electricity · mapped topic
- H01L27/22Primary
Electricity · mapped topic
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- What does patent US10290677B2 cover?
- A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion …
- Who is the assignee on this patent?
- Sii Semicondutor Corp, Ablic Inc
- What technology area does this patent fall under?
- Primary CPC classification G01R33/0052. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 14 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).