Photonic integrated circuit package

Patent metadata

Field	Value
Publication number	US-10290619-B2
Application number	US-201715398713-A
Country	US
Kind code	B2
Filing date	Jan 4, 2017
Priority date	Jan 4, 2016
Publication date	May 14, 2019
Grant date	May 14, 2019

Abstract

Methods, systems, and apparatus, including a photonic integrated circuit package, including a photonic integrated circuit chip, including an active optical element; an electrode configured to receive an electrical signal; a ground electrode; and a bond contact electrically coupled to the electrode; and an ASIC chip including circuitry configured to provide the electrical signal; and a bond contact that is electrically coupled to the circuitry; an bridge chip bonded to at least a portion of the photonic integrated circuit chip and at least a portion of the ASIC chip.

First claim

What is claimed is:

1. A photonic integrated circuit package, comprising:
an active optical element;
an electrode configured to receive an electrical signal, wherein at least one characteristic of the active optical element is changed based on the electrical signal received by the electrode;
a ground electrode; and
a bond contact electrically coupled to the electrode; and
an ASIC (application specific integrated circuit) chip comprising:
circuitry configured to provide the electrical signal; and
a bond contact that is electrically coupled to the circuitry;

an bridge chip bonded to at least a portion of the photonic integrated circuit chip and at least a portion of the ASIC chip, the bridge chip comprising:
a conductive trace formed on a surface of the bridge chip;
a ground trace;
a first conductive contact that is directly bonded to the bond contact of the photonic integrated circuit chip; and
a second conductive contact that is directly bonded to the bond contact of the ASIC chip, the first conductive contact and the second conductive contact electrically coupled to the conductive trace to provide the electrical signal from the circuitry of the ASIC chip to the electrode of the photonic integrated circuit chip,
wherein the bridge chip includes a first surface in contact with the photonic integrated circuit and the ASIC chip; and a second surface opposite to the first surface,
wherein the conductive trace of the bridge chip is formed on the first surface.

2. The photonic integrated circuit package of claim 1 ,
wherein the conductive trace of the bridge chip is formed on the second surface,
wherein the first conductive contact and the second conductive contact of the bridge chip is electrically coupled to the conductive trace of the bridge chip through vias formed in the bridge chip.

3. The photonic integrated circuit package of claim 1 , wherein the conductive trace of the bridge chip is formed on a surface that is in contact with the photonic integrated circuit and the ASIC chip.

4. A photonic integrated circuit package, comprising:
an active optical element;
an electrode configured to receive an electrical signal, wherein at least one characteristic of the active optical element is changed based on the electrical signal received by the electrode;
a ground electrode; and
a bond contact electrically coupled to the electrode; and
an ASIC (application specific integrated circuit) chip comprising:
circuitry configured to provide the electrical signal; and
a bond contact that is electrically coupled to the circuitry;

an bridge chip bonded to at least a portion of the photonic integrated circuit chip and at least a portion of the ASIC chip, the bridge chip comprising:
a conductive trace formed on a surface of the bridge chip;
a ground trace;
a first conductive contact that is directly bonded to the bond contact of the photonic integrated circuit chip; and
a second conductive contact that is directly bonded to the bond contact of the ASIC chip, the first conductive contact and the second conductive contact electrically coupled to the conductive trace to provide the electrical signal from the circuitry of the ASIC chip to the electrode of the photonic integrated circuit chip,
wherein the photonic integrated circuit chip is a multi-element photonic integrated circuit chip that includes multiple active optical elements,
wherein an impedance of each conductive trace for controlling a respective active optical element of the multiple active optical elements is a controlled impedance.

5. A photonic integrated circuit package, comprising:
an active optical element;
an electrode configured to receive an electrical signal, wherein at least one characteristic of the active optical element is changed based on the electrical signal received by the electrode;
a ground electrode; and
a bond contact electrically coupled to the electrode; and
an ASIC (application specific integrated circuit) chip comprising:
circuitry configured to provide the electrical signal; and
a bond contact that is electrically coupled to the circuitry;

an bridge chip bonded to at least a portion of the photonic integrated circuit chip and at least a portion of the ASIC chip, the bridge chip comprising:
a conductive trace formed on a surface of the bridge chip;
a ground trace;
a first conductive contact that is directly bonded to the bond contact of the photonic integrated circuit chip; and
a second conductive contact that is directly bonded to the bond contact of the ASIC chip, the first conductive contact and the second conductive contact electrically coupled to the conductive trace to provide the electrical signal from the circuitry of the ASIC chip to the electrode of the photonic integrated circuit chip,
wherein the active optical element is a lumped active optical element,
wherein an impedance of the conductive trace of the bridge chip is a controlled impedance.

6. The photonic integrated circuit package of claim 5 , wherein the controlled impedance is matched with an impedance of the lumped active optical element.

7. The photonic integrated circuit package of claim 5 , wherein the controlled impedance is between 10 ohm to 200 ohm.

8. A photonic integrated circuit package, comprising:
an active optical element;
an electrode configured to receive an electrical signal, wherein at least one characteristic of the active optical element is changed based on the electrical signal received by the electrode;
a ground electrode; and
a bond contact electrically coupled to the electrode; and
an ASIC (application specific integrated circuit) chip comprising:
circuitry configured to provide the electrical signal; and
a bond contact that is electrically coupled to the circuitry;

an bridge chip bonded to at least a portion of the photonic integrated circuit chip and at least a portion of the ASIC chip, the bridge chip comprising:
a conductive trace formed on a surface of the bridge chip;
a ground trace;
a first conductive contact that is directly bonded to the bond contact of the photonic integrated circuit chip; and
a second conductive contact that is directly bonded to the bond contact of the ASIC chip, the first conductive contact and the second conductive contact electrically coupled to the conductive trace to provide the electrical signal from the circuitry of the ASIC chip to the electrode of the photonic integrated circuit chip,
wherein the active optical element is a lumped active optical element,
wherein the conductive trace of the bridge chip comprises:
a first transmission line segment; and
a second transmission line segment that is in series with the first transmission line segment,
wherein dimensions of the first transmission line segment are different from dimensions of the second transmission line segment.

9. A photonic integrated circuit package, comprising:
an active optical element;
an electrode configured to receive an electrical signal, wherein at least one characteristic of the active optical element is changed based on the electrical signal received by the electrode;
a ground electrode; and
a bond contact electrically coupled to the electrode; and
an ASIC (application specific integrated circuit) chip comprising:
circuitry configured to provide the electrical signal; and
a bond contact that is electrically coupled to the circuitry;

an bridge chip bonded to at least a portion of the photonic integrated circuit chip and at least a portion of the ASIC chip, the bridge chip comprising:
a conductive trace formed on a surface of the bridge chip;
a ground trace;
a first conductive contact that is directly bonded to the bond contact of the photonic integrated circuit

Assignees

• Infinera Corp

Inventors

• Evans Peter W
• Osenbach John W
• Kish Jr Fred A
• Zhang Jiaming
• Olmedo Miguel Iglesias
• Anagnosti Maria

Classifications

• H10W72/90

  Bond pads, in general · CPC title

• H10W72/50

  Bond wires · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W70/611

  for connecting multiple chips together · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title