Array substrate and liquid crystal display device

Patent metadata

Field	Value
Publication number	US-10288960-B2
Application number	US-201615033637-A
Country	US
Kind code	B2
Filing date	Mar 3, 2016
Priority date	Feb 18, 2016
Publication date	May 14, 2019
Grant date	May 14, 2019

Abstract

The present invention discloses an array substrate, and the array substrate comprises a substrate, a plurality of data lines and a plurality of scan lines; the substrate comprises a display region and a peripheral circuit region located at peripheral sides of the display region, and each data line comprises a data line outer section and a data line inner section, and each scan line comprises a scan line outer section and a scan line inner section; the peripheral circuit region further comprises a short connection line, an enable signal line, a plurality of first thin film transistors, a plurality of second thin film transistors, a plurality of first electrostatic discharge protection circuits, a plurality of second electrostatic discharge protection circuits, a plurality of third electrostatic discharge protection circuits and a plurality of fourth electrostatic discharge protection circuits.

First claim

What is claimed is:

1. An array substrate, comprising a substrate and a plurality of data lines and a plurality of scan lines located on the substrate; wherein the substrate comprises a display region and a peripheral circuit region located at peripheral sides of the display region, and each data line comprises a data line outer section and a data line inner section, and each scan line comprises a scan line outer section and a scan line inner section, and the data line outer section and the scan line outer section are located in the peripheral circuit region, and both the data line inner section and the scan line inner section extend from the peripheral circuit region to the display region;
the peripheral circuit region further comprises a short connection line, an enable signal line, a plurality of first thin film transistors, a plurality of second thin film transistors, a plurality of first electrostatic discharge protection circuits, a plurality of second electrostatic discharge protection circuits, a plurality of third electrostatic discharge protection circuits and a plurality of fourth electrostatic discharge protection circuits, and both gates of each first thin film transistor and each second thin film transistor are coupled to the enable signal line, and a drain of the first thin film transistor is coupled to a data line outer section of one data line, and a source of the first thin film transistor is coupled to a data line inner section of the same data line; a drain of the second thin film transistor is coupled to a scan line outer section of one scan line, and a source of the second thin film transistor is coupled to a scan line inner section of the same scan line; one end of the first electrostatic discharge protection circuit is coupled to the data line outer section, and the other end is coupled to the short connection line; one end of the second electrostatic discharge protection circuit is coupled to the data line inner section, and the other end is coupled to the short connection line; one end of the third electrostatic discharge protection circuit is coupled to the scan line outer section, and the other end is coupled to the short connection line; one end of the fourth electrostatic discharge protection circuit is coupled to the scan line inner section, and the other end is coupled to the short connection line; the enable signal line controls on or off of the first thin film transistor and the second thin film transistor;
wherein the first electrostatic discharge protection circuit comprises a third thin film transistor, and a gate and a drain of the third thin film transistor are coupled to the data line outer section, and a source is coupled to the short connection line, and the second electrostatic discharge protection circuit comprises a fourth thin film transistor, and a gate and a drain of the fourth thin film transistor are coupled to the data line inner section, and a source is coupled to the short connection line; and
wherein the first electrostatic discharge protection circuit further comprises a seventh thin film transistor, and the seventh thin film transistor and the third thin film transistor are coupled in parallel; and the second electrostatic discharge protection circuit further comprises an eighth thin film transistor, and the eighth thin film transistor and the fourth thin film transistor are coupled in parallel.

2. The array substrate according to claim 1 , wherein the third electrostatic discharge protection circuit comprises a fifth thin film transistor, and a gate and a drain of the fifth thin film transistor are coupled to the scan line outer section, and a source of the fifth thin film transistor is coupled to the short connection line, and the fourth electrostatic discharge protection circuit comprises a sixth thin film transistor, and a gate and a drain of the sixth thin film transistor are coupled to the scan line inner section, and a source of the sixth thin film transistor is coupled to the short connection line.

3. The array substrate according to claim 2 , wherein the third electrostatic discharge protection circuit further comprises a ninth thin film transistor, and the ninth thin film transistor and the fifth thin film transistor are coupled in parallel; the fourth electrostatic discharge protection circuit further comprises a tenth thin film transistor, and the tenth thin film transistor and the sixth thin film transistor are coupled in parallel.

4. The array substrate according to claim 1 , wherein as the enable signal line is in a high voltage level state, the first thin film transistor and the second thin film transistor are in an on state, and as the enable signal line is in a low voltage level state, the first thin film transistor and the second thin film transistor are in an off state.

5. The array substrate according to claim 2 , wherein as the enable signal line is in a high voltage level state, the first thin film transistor and the second thin film transistor are in an on state, and as the enable signal line is in a low voltage level state, the first thin film transistor and the second thin film transistor are in an off state.

6. The array substrate according to claim 3 , wherein as the enable signal line is in a high voltage level state, the first thin film transistor and the second thin film transistor are in an on state, and as the enable signal line is in a low voltage level state, the first thin film transistor and the second thin film transistor are in an off state.

7. The array substrate according to claim 1 , wherein as the first thin film transistor and the second thin film transistor are in an on state, the display region works, and as the first thin film transistor and the second thin film transistor are in an off state, the display region stops working.

8. A liquid crystal display device, wherein the liquid crystal display device comprises an array substrate, and the array substrate comprises a substrate and a plurality of data lines and a plurality of scan lines located on the substrate; wherein the substrate comprises a display region and a peripheral circuit region located at peripheral sides of the display region, and each data line comprises a data line outer section and a data line inner section, and each scan line comprises a scan line outer section and a scan line inner section, and the data line outer section and the scan line outer section are located in the peripheral circuit region, and both the data line inner section and the scan line inner section extend from the peripheral circuit region to the display region;
the peripheral circuit region further comprises a short connection line, an enable signal line, a plurality of first thin film transistors, a plurality of second thin film transistors, a plurality of first electrostatic discharge protection circuits, a plurality of second electrostatic discharge protection circuits, a plurality of third electrostatic discharge protection circuits and a plurality of fourth electrostatic discharge protection circuits, and both gates of each first thin film transistor and each second thin film transistor are coupled to the enable signal line, and a drain of the first thin film transistor is coupled to a data line outer section of one data line, and a source of the first thin film transistor is coupled to a data line inner section of the same data line; a drain of the second thin film transistor is coupled to a scan line outer section of one scan line, and a source of the second thin film transistor is coupled to a can line inner section of the same can line; one end of the first electrostatic discharge protection circuit is coupled to the data line outer section, and the other end is coupled to the short connection line; one end of the second electrostatic

Assignees

• Shenzhen China Star Optoelect

Inventors

• Xu Xiangyang

Classifications

• H01L27/0266

  Electricity · mapped topic

• H01L27/02

  Electricity · mapped topic

• G09G2330/06

  Handling electromagnetic interferences [EMI], covering emitted as well as received electromagnetic radiation · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G09G2300/0819

  used for counteracting undesired variations, e.g. feedback or autozeroing · CPC title