Process for producing silicon single crystal

Patent metadata

Field	Value
Publication number	US-10287704-B2
Application number	US-201515506961-A
Country	US
Kind code	B2
Filing date	Aug 27, 2015
Priority date	Aug 29, 2014
Publication date	May 14, 2019
Grant date	May 14, 2019

Abstract

In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.

First claim

The invention claimed is:

1. A process for producing a silicon single crystal by heating a silicon raw material held in a crucible to provide a silicon melt and allowing a silicon single crystal to grow during the pulling-up of a silicon single crystal ingot from the silicon melt, the process comprising using, as at least part of the silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process, the crushed materials obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member,
wherein a carbon concentration of the crushed materials is from 0.04 to 2.8 ppma,
wherein the crushed materials are obtained by removing a core including both the carbon core wire holding member embedded into the rod end and a polycrystalline silicon surrounding the carbon core wire holding member and covering a distance of 3 mm or more from an interface of the polycrystalline silicon with the carbon core wire holding member from the rod end cut off from the polycrystalline silicon rod to give a rod end hollow body, and thereafter crushing the rod end hollow body,
wherein the polycrystalline silicon is in direct contact with a surface of the carbon core wire holding member, and
wherein carbon from the carbon core wire holding member is incorporated into the polycrystalline silicon while silicon is being deposited.

2. The process for producing a silicon single crystal according to claim 1 , wherein a substantial whole region of a straight body party of the silicon single crystal ingot has a carbon concentration of 0.01 to 1 ppma.

3. The process for producing a silicon single crystal according to claim 2 , wherein the crushed materials have a particle size such that at least 90% by mass of the crushed materials fall within the range from 2 to 50 mm for a length of a long diameter.

4. The process for producing a silicon single crystal according to claim 3 , which provides a silicon single crystal for producing a substrate of a solar cell.

5. The process for producing a silicon single crystal according to claim 2 , which provides a silicon single crystal for producing a substrate of a solar cell.

6. The process for producing a silicon single crystal according to claim 1 , wherein the crushed materials have a particle size such that at least 90% by mass of the crushed materials fall within the range from 2 to 50 mm for a length of a long diameter.

7. The process for producing a silicon single crystal according to claim 6 , which provides a silicon single crystal for producing a substrate of a solar cell.

8. The process for producing a silicon single crystal according to claim 1 , comprising:
measuring a carbon concentration distribution at the rod end of the polycrystalline silicon rod produced by Siemens process in the vicinity contacting with the carbon core wire holding member,
varying a diameter of a core to be removed, based on the measured carbon concentration distribution, in the production by the process according to claim 1 of crushed materials in the vicinity of the core wire holding member from another polycrystalline silicon rod produced in the same silicon deposition furnace and under the same deposition conditions as the polycrystalline silicon rod, and
using the crushed materials thus obtained with a carbon concentration adjusted as at least part of the silicon raw material.

9. The process for producing a silicon single crystal according to claim 8 , wherein the silicon single crystal is produced by multi-pulling, and the crushed materials in the vicinity of the core wire holding member with a carbon concentration adjusted are used as a recharging silicon raw material in the multi-pulling.

10. The process for producing a silicon single crystal according to claim 9 , which provides a silicon single crystal for producing a substrate of a solar cell.

11. The process for producing a silicon single crystal according to claim 8 , which provides a silicon single crystal for producing a substrate of a solar cell.

12. The process for producing a silicon single crystal according to claim 1 , which provides a silicon single crystal for producing a substrate of a solar cell.

13. The process for producing a silicon single crystal according to claim 1 , wherein a substantial whole region of a straight body party of the silicon single crystal ingot has a carbon concentration of 0.025 to 0.9 ppma.

Assignees

• Tokuyama Corp

Inventors

• Yasumura Ken
• Tachibana Shoji

Classifications

• C01B33/02

  Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) · CPC title

• C30B15/00 Primary

  Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• C01B33/035

  by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process · CPC title

• C30B35/007

  Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title