Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US10287677B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10287677-B2 |
| Application number | US-201314443300-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 18, 2013 |
| Priority date | Nov 19, 2012 |
| Publication date | May 14, 2019 |
| Grant date | May 14, 2019 |
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Methods of fabricating a graphene film are disclosed. An example method can include providing a substrate, heating the substrate between about 600° C. and about 1100° C. in a chamber, and introducing a carbon source into the chamber at a temperature between about 600° C. and about 1100° C. for about 10 seconds to about 1 minute. The method can further include cooling the substrate to about room temperature to form the graphene film Methods of fabricating pillared graphene nano structures and graphene based devices are also provided.
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What is claimed is: 1. A method of fabricating a pillared graphene nanostructure comprising carbon nanotubes on a graphene film, the method comprising: providing a substrate; depositing a block copolymer on the substrate, wherein the block copolymer comprises a matrix of major polymer block, and cylinders of minor polymer block within the matrix; subsequently loading a catalyst into the cylinders of the minor polymer block wherein the minor polymer block absorbs catalytic ions to form a loaded block copolymer having a patterned array of catalyst nanoparticles; introducing the loaded block copolymer into a heated atmosphere of Ar+H 2 ; introducing a carbon source into the heated atmosphere of Ar+H 2 to form the pillared graphene nanostructure; and cooling the pillared graphene nanostructure. 2. The method of claim 1 , wherein depositing the block copolymer comprises: dissolving the block copolymer to form a polymer solution; spin coating the solution onto the substrate; and solvent annealing the spin coated solution. 3. The method of claim 1 , wherein the catalyst comprises ions of a transition metal. 4. The method of claim 1 , wherein loading the catalyst into the block copolymer comprises introducing the copolymer into a solution of the catalyst in salt form. 5. The method of claim 1 , wherein before introducing the loaded block copolymer into the heated atmosphere, the method further comprising: removing the loaded block copolymer from the substrate; and transferring the loaded block copolymer to a different substrate. 6. The method of claim 5 , wherein the different substrate comprises a deposited metal layer. 7. The method of claim 1 , wherein the heated atmosphere is between about 600° C. and about 1100° C. 8. The method of claim 1 , wherein the carbon source is introduced for about 5 minutes to about 30 minutes. 9. The method of claim 1 , wherein the carbon source is C 2 H 2 or CH 4 . 10. The method of claim 1 , further comprising controlling the size and separation of the carbon nanotubes by controlling the size and separation of the catalyst.
Carbon, e.g. diamond-like carbon · CPC title
being conductive materials · CPC title
characterised by treatments done after the formation of the materials · CPC title
using chemical vapour deposition [CVD] · CPC title
Separators · CPC title
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